Coarsening structure, coarsening surface and coarsening layer of optoelectronic element and manufacturing method of optoelectronic element

A technology of photoelectric components and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of affecting the quality of epitaxy, difficulty in etching, and increasing process complexity, etc., and achieve low cost, low pollution, and better light extraction efficiency Effect

Inactive Publication Date: 2010-02-03
ZHANJING TECH SHENZHEN +1
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Problems solved by technology

However, the processing method is not suitable for gallium nitride (GaN) series materials, because gallium nitride series materials are very strong and resistant to acid and alkali corrosion, and general chemical reagents and organi

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  • Coarsening structure, coarsening surface and coarsening layer of optoelectronic element and manufacturing method of optoelectronic element
  • Coarsening structure, coarsening surface and coarsening layer of optoelectronic element and manufacturing method of optoelectronic element
  • Coarsening structure, coarsening surface and coarsening layer of optoelectronic element and manufacturing method of optoelectronic element

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[0052] The direction discussed in the present invention is a kind of photoelectric element roughening structure and its process. In order to thoroughly understand the present invention, detailed steps and their composition will be proposed in the following description. Obviously, the implementation of the present invention is not limited to the specific details familiar to those skilled in the roughened structure of the optoelectronic element and its process. On the other hand, well-known components or steps are not described in details to avoid unnecessary limitation of the present invention. The preferred embodiments of the present invention will be described in detail as follows. However, in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited. The scope of the appended claims is quasi.

[0053] In order to increase the light output efficiency of the optoelect...

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Abstract

The invention provides a coarsening structure, a coarsening surface and a coarsening layer of an optoelectronic element and a manufacturing method of the optoelectronic element. The optoelectronic element with double-scale coarsening structures is characterized in that: impurities are doped in an extension process of a semiconductor of the optoelectronic element to allow the semiconductor to growa plurality of island bodies; subsequently, the extension temperature is lowered so as to continuously form a plurality of pin holes on the plurality of island bodies, wherein the pin holes are distributed on the top parts and side faces of the island bodies, so the total internal reflectivity of rays in the optoelectronic element is greatly reduced and the light intensity performance of the optoelectronic element is enhanced. Compared with the conventional art, the process of the invention has the advantages of low pollution, simple process, low cost, better light extraction efficiency, bigger effective area of double-scale light scattering surface and the like.

Description

technical field [0001] The invention relates to a photoelectric element roughening structure and its technology, in particular to a photoelectric element double-scale roughening structure and its technology. Background technique [0002] The luminous efficiency of light-emitting elements using solid-state materials is mainly the result of the addition of internal quantum efficiency and external quantum efficiency. Generally speaking, the internal quantum efficiency is more related to the characteristics of the material itself and the epitaxial quality, while the external quantum efficiency is related to the refractive index of the material and the flatness of the surface. However, the efficiency of known light-emitting diodes is limited by the inability to completely emit the generated light outwards, because typical semiconductor materials compare with ambient air (n=1.0) or encapsulation material-epoxide (n≈1.5), Has a higher refractive index (n≈2.2-3.8). [0003] Accord...

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Application Information

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IPC IPC(8): H01L33/00
Inventor 叶颖超黄世晟涂博闵林文禹吴芃逸詹世雄
Owner ZHANJING TECH SHENZHEN
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