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Patterned substrate of pattern improved LED chip and LED chip containing the same

A technology for LED chips and patterned substrates, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as lack of design indicators for triangular pyramid pattern substrate patterns, damage to GaN growth quality, etc., to improve internal quantum efficiency, improve Epitaxial quality, the effect of avoiding epitaxial defects

Inactive Publication Date: 2013-04-03
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Even though patterned substrates have greatly improved the light extraction efficiency of LEDs, there is still no research that can accurately point out the optimal pattern height, spacing, pattern density, etc. for patterned substrates with triangular pyramids as the basic pattern. The application of substrate pattern lacks a set of systematic design indicators
In addition, in terms of pattern size optimization, the trade-off between size reduction and damage to GaN growth quality is solved, and better epitaxy quality is ensured under the premise of improving light extraction efficiency, so as to truly improve LED performance. still to be studied

Method used

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  • Patterned substrate of pattern improved LED chip and LED chip containing the same
  • Patterned substrate of pattern improved LED chip and LED chip containing the same
  • Patterned substrate of pattern improved LED chip and LED chip containing the same

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Embodiment 1

[0027] figure 1 Be the schematic diagram of the LED chip of this embodiment, as figure 1 As shown, it consists of a patterned sapphire substrate 11, an N-type GaN layer 12, an MQW quantum well layer 13, and a P-type GaN layer 14 arranged in sequence.

[0028] Such as Figure 2~3 As shown, in the patterned substrate of the LED chip of this embodiment, the pattern of the substrate is composed of a plurality of regular triangular pyramids 15 of the same shape arranged on the surface of the substrate, and the inclination angle α of each regular triangular pyramid is 65°; The pitch d of pyramid is 1.4 times of the side length a of described regular triangular pyramid; The corresponding side length a of regular triangular pyramid is 3 μ m in the present embodiment; Figure 4 The rectangular arrangement shown.

Embodiment 2

[0030] In the patterned substrate of the LED chip of this embodiment, the pattern of the substrate is composed of a plurality of regular triangular pyramids of the same shape arranged on the surface of the substrate, and the inclination angle α of each regular triangular pyramid is 65°; the distance d between adjacent regular triangular pyramids Equal to the side length a of described regular triangular pyramid; The corresponding side length a of regular triangular pyramid is 4 μ m in the present embodiment; Figure 5 The hexagonal arrangement shown.

Embodiment 3

[0032] In the patterned substrate of the LED chip of this embodiment, the pattern of the substrate is composed of a plurality of regular triangular pyramids of the same shape arranged on the surface of the substrate, and the inclination angle α of each regular triangular pyramid is 60°; the distance d between adjacent regular triangular pyramids It is 1.2 times of the side length a of the regular triangular pyramid; in this embodiment, the side length a corresponding to the regular triangular pyramid is 6 μm; the plurality of regular triangular pyramids with the same shape are arranged in a hexagonal manner.

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Abstract

The invention discloses a patterned substrate of pattern improved LED chip. The pattern of the substrate is composed of a plurality of regular triangular pyramids with the same shape which are arranged on the surface of the substrate, and the inclination angle alpha of the regular triangular pyramids is 60 DEG to 65 DEG. The space D of the adjacent regular triangular pyramids is 1 to 1.4 times the length A of the side of the regular triangular pyramids. The invention further discloses a LED chip containing the patterned substrate of pattern improved LED chip. Compared with the prior art, the LED chip containing the patterned substrate of pattern improved LED chip has better extraction efficiency than a LED chip with a common substrate, and is convenient in popularization and application. According to the patterned substrate of pattern improved LED chip and LED chip containing the same, the regular triangular pyramids graph accords with the crystal lattice structure of GaN, and the target pattern can be easily obtained in practical processing.

Description

technical field [0001] The invention relates to an LED chip, in particular to a patterned substrate of the LED chip with pattern optimization and the LED chip. Background technique [0002] In order to improve the internal quantum efficiency and light extraction efficiency of GaN-based LEDs, a number of technologies have been applied in LED research, such as lateral epitaxial growth technology, surface roughening, nanoimprinting technology, and metal mirror reflection layer technology. The patterned substrate technology proposed in recent years can effectively improve the light extraction efficiency of GaN-based LEDs on sapphire substrates, and has become a research hotspot in the field of GaN-based LEDs on sapphire substrates. As the key to patterned substrate technology, the substrate pattern has evolved so far, which has significantly improved the LED light extraction effect and epitaxy quality, and has become an important way to improve LED performance. [0003] The imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22
Inventor 李国强王海燕周仕忠林志霆
Owner SOUTH CHINA UNIV OF TECH
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