Epitaxial growing method of LED

An epitaxial growth and reaction chamber technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as low luminous efficiency, current crowded N-layer resistance, and uneven current distribution in the light-emitting layer.

Active Publication Date: 2016-08-17
XIANGNENG HUALEI OPTOELECTRONICS
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current distribution of the N layer of the traditional sapphire LED epitaxial growth is uneven, resulting in current crowding and high resistance of the N layer, resulting in uneven current distribution of the light-emitting layer and low luminous efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial growing method of LED
  • Epitaxial growing method of LED
  • Epitaxial growing method of LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] see figure 2 , the present invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0050] A kind of LED epitaxial growth method, see figure 1 , is characterized in that it includes in sequence: processing the substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a light-emitting layer, growing a P-type AlGaN lay...

Embodiment 2

[0060] The application examples of the LED epitaxial growth method of the present invention are provided below, and its epitaxial structure can be found in figure 2 , growth method see figure 1 . Using MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0061] Step 101, processing the substrate:

[0062] H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber p...

Embodiment 3

[0086] A conventional LED epitaxial growth method is provided below as a comparative example of the present invention.

[0087] The growth method of conventional LED epitaxy is (see the epitaxial layer structure image 3 ):

[0088] 1. H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 5min-10min.

[0089] 2.1. Lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed the flow rate at 10000sccm-20000sccm NH 3 (sccm is standard milliliter per minute), TMGa of 50sccm-100sccm, H of 100L / min-130L / min 2 , grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate;

[0090] 2.2. Raise the temperature to 1000°C-1100°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed the flow at 30000sccm-40000sccm NH 3 , 100L / min-130L / min H 2 , keep the temperature stable for 300s-500...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an epitaxial growing method of an LED. The method comprises the steps of processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing an InAlGaN/SiAlN superlattice layer, growing a luminous layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with Mg and conducting cooling. According to the technical scheme, the InAlGaN/SiAlN superlattice layer is introduced after growing of the N-type GaN layer doped with Si and before growing of the luminous layer, and due to the introduction of the InAlGaN/SiAlN superlattice layer, the N-layer current distribution of the LED is improved, and the luminous intensity of the LED is improved.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, and in particular, relates to an LED epitaxial growth method. Background technique [0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers, and the scale of domestic production of LEDs is gradually expanding. ; The demand for LED brightness and luminous efficacy is increasing day by day in the market. How to grow better epitaxial wafers has been paid more and more attention. Because of the improvement of the quality of epitaxial layer crystals, the performance of LED devices can be improved, and the luminous efficiency, life, anti-aging ability, The antistatic ability and stability will increase with the improvement of the crystal quality of the epitaxia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L33/00H01L33/04H01L33/14
CPCH01L21/0242H01L21/0254H01L21/0262H01L33/007H01L33/04H01L33/14H01L33/145
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap