Epitaxial growing method of LED

Abstract

The invention discloses an epitaxial growing method of an LED. The method comprises the steps of processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing an InAlGaN / SiAlN superlattice layer, growing a luminous layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with Mg and conducting cooling. According to the technical scheme, the InAlGaN / SiAlN superlattice layer is introduced after growing of the N-type GaN layer doped with Si and before growing of the luminous layer, and due to the introduction of the InAlGaN / SiAlN superlattice layer, the N-layer current distribution of the LED is improved, and the luminous intensity of the LED is improved.

Description

technical field

[0001] The present application relates to the technical field of LED epitaxial design application, and in particular, relates to an LED epitaxial growth method. Background technique

[0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers, and the scale of domestic production of LEDs is gradually expanding. ; The demand for LED brightness and luminous efficacy is increasing day by day in the market. How to grow better epitaxial wafers has been paid more and more attention. Because of the improvement of the quality of epitaxial layer crystals, the performance of LED devices can be improved, and the luminous efficiency, life, anti-aging ability, The antistatic ability and stability will increase with the improvement of the crystal quality of the epitaxia...

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