Gallium nitride based light emitting diode epitaxial wafer and manufacturing method thereof

A light-emitting diode, gallium nitride-based technology, applied in electrical components, electrical solid-state devices, circuits, etc., can solve problems such as affecting electronic expansion, and achieve the effect of improving antistatic ability, improving crystal quality, and improving warpage

Active Publication Date: 2019-06-07
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0008] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its manufacturing method, which can solve the problem that many defects in the N-type semiconductor layer in the prior art will affect the expansion of electrons

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  • Gallium nitride based light emitting diode epitaxial wafer and manufacturing method thereof
  • Gallium nitride based light emitting diode epitaxial wafer and manufacturing method thereof
  • Gallium nitride based light emitting diode epitaxial wafer and manufacturing method thereof

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0029] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, and a P-type semiconductor layer 40, and the N-type semiconductor layer 20, the active layer 30, and the P-type semiconductor layer 40 are sequentially stacked on the substrate 10.

[0030] In this embodiment, the N-type semiconductor layer 20 is a GaN layer doped with Si. Such as figure 1 As shown, at least one composite layer 100 i...

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Abstract

The invention discloses a gallium nitride based light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The gallium nitride basedlight emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate; the N-type semiconductor layer is a Si-doped GaN layer; at least one composite layer is inserted into the N-type semiconductor layer, and the composite layer includes a first sub-layer, a second sub-layer and a third sub-layer which are sequentially stacked; the first sub-layer is a Mg-doped GaN layer, the second sub-layer isan undoped AlGaN layer, and the third sub-layer is a Ge-doped GaN layer. The gallium nitride based light emitting diode epitaxial wafer and the manufacturing method thereof can effectively promote thelateral expansion of electrons, make the electrons evenly distributed in the N-type semiconductor layer, and improve the antistatic capability of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has attracted widespread attention due to its advantages of energy saving, environmental protection, high reliability, and long service life. Since civil lighting focuses on energy saving and service life of products, it is particularly critical to reduce the series resistance of LEDs and improve the antistatic ability of LEDs. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/02H01L33/00H01L23/60
Inventor 葛永晖郭炳磊王群吕蒙普李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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