A new process flow is provided for the creation of a fuse contact and a bond pad. The invention starts with a
semiconductor substrate over the surface of which is provided top level
metal and fuse
metal in the surface of a layer of insulation deposited over the surface of the substrate. A first etch stop layer is deposited over the surface of the layer of insulation over which a first
passivation layer is deposited, an opening is created through these
layers exposing the top level
metal. A metal plug is created overlying the exposed surface of the top level metal. A stack of a patterned and etched
hard mask layers, having been deposited at part of the creation of the metal plug and overlying a layer of metal plug material, remains in place over the surface of the created metal plug. A second layer of
passivation material is deposited, the second layer of
passivation is patterned and etched exposing the surface of the first layer of passivation overlying the fuse metal and exposing the surface of the stack of
hard mask layers overlying the created metal plug. The stack of
hard mask layers is then removed from the surface of the metal plug, exposing the surface of the metal plug to serve as a
contact pad and further reducing the thickness of the first layer of passivation over the surface of the fuse metal, making the fuse more accessible for fuse blowing.