Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics

A manufacturing method, polysilicon technology, applied in new forms of cast silicon, manufacturing cast silicon for optoelectronic applications, can solve the problems of reduced cell efficiency and low efficiency of photovoltaic cells, etc.

Inactive Publication Date: 2009-02-18
AMG IDEAL CAST SOLAR
View PDF0 Cites 49 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can cause a decrease in battery efficiency
Even taking into account the presence of radially distributed defects in monocrystalline silicon produced by known techniques, photovoltaic cells made of such polycrystalline silicon are generally less efficient than equivalent photovoltaic cells made of the same monocrystalline silicon. Low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
  • Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
  • Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0077] Therefore, the orientation of the seed crystals used to form the silicon in the crucible can be selected so that a specific grain boundary is formed in the cast geometric polysilicon, and this grain boundary surrounds the geometric shape. In contrast to the embodiments of the present invention, known casting methods involve the casting of polycrystalline grains in an uncontrolled manner by the directional solidification of a completely molten silicon substance. The resulting crystal grains have a substantially random orientation and size distribution. The random grain orientation makes it difficult to texture the silicon surface effectively. In addition, it has been shown that, as a natural product of general growth techniques, kinks in the grain boundaries often form the nuclei of structural defects, which involve clusters or lines of dislocations. These dislocations and the impurities often attracted by them cause rapid recombination of the electrical carrier and deterior...

Embodiment 1

[0096] Seed crystal preparation: Use a diamond-coated band saw to cut out pure Czochralski (CZ) silicon (single crystal) ingots along the length. The pure Czochralski silicon is purchased from MEMC, Inc. and has 0.3ppma of boron to make the crystal The rod has a square cross-section measuring 14 cm on each side. Use the same saw to cut the obtained single crystal silicon block from the cross section into a flat plate with a thickness of about 2 cm to about 3 cm. These plates are used as single crystal silicon seeds or "seeds". Maintain the polar orientation of the (100) crystal of the silicon ingot. Then, the obtained single crystalline silicon plate is arranged on the bottom of the quartz crucible, so that the (100) direction of the plate faces upward, and the (110) direction is kept parallel to one side of the crucible. The quartz crucible has a square cross-section, 68 cm on the side, about 40 cm in depth, and about 1.8 cm in wall thickness. The plates are arranged at the botto...

Embodiment 2

[0100] Seed crystal preparation: seeding was performed as in Example 1, except that the single crystal silicon seed crystal was cut so that half of the seed crystal had a (110) direction at 45 degrees to the side surface of the square seed crystal, and the other half At an angle of about 20 degrees. At the bottom of the crucible, the square slices are layered in a grid pattern, and two different seed crystal orientations are alternated, that is, the (110) direction and the crucible sidewall orientation form an angle of 45 degrees and 20 degrees. Relative to each other, the seed crystals have an orientation difference of 25 degrees or 155 degrees. However, due to the size mismatch of the square-shaped seeds, some voids in the seed layer are not covered. The crucible measures approximately 33 cm on each square side and is approximately 22 cm high.

[0101] Casting: A crucible containing seed crystals and a separate crucible containing a total of 56 kg of raw silicon blocks are loade...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Sizeaaaaaaaaaa
Surface areaaaaaaaaaaa
Login to View More

Abstract

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

Description

[0001] Description [0002] The present invention was completed with the support of the US government. The DOE contract number awarded by the Department of Energy (DOE) is DE-AC36-98GO10337, and the subcontract number of the National Renewable Energy Laboratory (NREL) is ZDO-2-30628- 03. The U.S. government has certain rights in this invention. [0003] Related application [0004] This application requires U.S. Provisional Application 60 / 760453 filed on January 20, 2006, U.S. Provisional Application 60 / 808954 filed on May 30, 2006, U.S. Provisional Application 60 / 839672 filed on August 24, 2006, and 2006 The priority rights of the US provisional application 60 / 839670 filed on August 24 are expressly incorporated into this article in full as a whole for reference. Technical field [0005] The present invention generally relates to the field of optoelectronics, and to methods and devices for manufacturing cast silicon for optoelectronic applications. The invention further relate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B11/14H01L31/18
CPCY02P70/50
Inventor 内森·G·斯托达德
Owner AMG IDEAL CAST SOLAR
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com