Method for testing film residual stress and its layered deep distribution

Abstract

A method for testing film residual stress and its distribution along layer depth includes calculating test sample curvity radius by utilizing relation slope obtained from linear relation of test sample movement distance to distance moved by silicon light cell in following with light beam deflection; applying chemical manner to peel off film layer by layer for solving out equivalent variable R1 of test sample curvity radius before and after each pooling ¿C off; substituting said variable, base plate elastic constant E and v, base plate thickness h and thickness of each pooling ¿C off in a formula to obtain residual stress on each layer of film.

Description

Technical field The invention relates to the measurement technology of the residual stress of the film, in particular to propose a method of using an optical lever system to measure the change in the radius of curvature of a strip-shaped test piece caused by the stripping of the film, thereby calculating the residual stress of the film and its distribution along the layer depth Methods. Background technique Thin films are widely used in modern science and technology. For example, metal materials often use ceramic films with excellent tribological properties and corrosion resistance as protective films. Such films can be prepared using physical vapor deposition (PVD). The as-deposited film generally has a residual compressive stress with an average value of up to several GPa or even a few GPa, and its value in the thickness direction may vary greatly. The residual compressive stress not only directly affects the membrane-base bonding strength, but also has a great influence on th...

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Problems solved by technology

It can be seen that the existing methods for measuring the residual stress of thin films, especially the method for measuring t

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