High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers

Abstract

A high-temp chemical vapor deposition apparatus with communicated multiple reaction chambers for organic metal is composed of gas channel system, at least two reaction chambers with specimen heater, specimen feeding unit, delivering pipeline system, vacuumizing system, tail gase treating and alarm system and operation control system. It features that each reaction chamber can be specially designed according to the requirement of individual MOCVD system to material.

Description

technical field [0001] This invention relates to improvements in chemical vapor chemical deposition (CVD) or metalorganic chemical vapor deposition (MOCVD) apparatus. technical background [0002] Metal Organic Chemical Vapor Deposition (MOCVD for short) is an advanced vapor phase epitaxy technology developed in the late 1970s, which is widely used in the preparation of various thin film materials. Especially in the field of semiconductor materials, it is juxtaposed with molecular beam epitaxy (MBE) to become the dominant method in the preparation of compound semiconductor thin films. [0003] The existing metalorganic chemical vapor deposition (MOCVD) consists of a gas path system that provides reactive gases and organic metal sources, a reaction chamber, a sample delivery mechanism, a transportation pipeline system, a vacuum unit, an exhaust gas treatment and alarm system, and an operation control system. and other parts. MOCVD equipment can be used for large-area thin f...

AI Technical Summary

Problems solved by technology

Due to the large difference in the growth conditions of different series of materials, it is difficult for the same reaction chamber to meet the growth requirements of different materials; and growing different series of materials in the same reaction chamber may cause cross-contamination

For example, the epitaxial growth temperature of zinc oxide film is generally 600°C, and the epitaxial growth temperature of silicon carbide film is as high as 1400°C. The hydrogen used in silicon carbide is the reducing agent of zinc oxide, so it is impossible for zinc oxide and silicon carbide to grow in the same reaction chamber

At present, although some devices have multiple reaction chambers, they are generally isolated systems. Different reaction chambers cannot communicate with each other, and mixed multilayer films cannot be grown.

The above situation limits the range of material selection for heterogeneous epitaxy with conventional MOCVD equipment

In addition, the substrate heating temperature of existing MOCVD equipment can only reach a maximum of 1300°C, which is lower than the temperature required for some materials that require high temperature growth, such as the temperature required for epitaxial silicon carbide is 1400°C

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