Metal-organic chemical vapor deposition machine

A chemical vapor deposition and organometallic technology, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of increasing process cost, reducing the output quantity of components, increasing the output quantity of components, etc.

Inactive Publication Date: 2011-11-16
佛山市奇明光电有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, under the reaction chamber of the metal-organic chemical vapor deposition (Metal-Organic CVD; MOCVD) machine of the same size, although the use of large-sized wafers can save the cost of the subsequent die process

Method used

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  • Metal-organic chemical vapor deposition machine
  • Metal-organic chemical vapor deposition machine
  • Metal-organic chemical vapor deposition machine

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Embodiment Construction

[0036] Please refer to figure 2 , which shows a schematic diagram of a metalorganic chemical vapor deposition machine according to an embodiment of the present invention. In this embodiment, the metalorganic chemical vapor deposition tool 200 is suitable for epitaxy of the semiconductor material layer of the light emitting diode. The metalorganic chemical vapor deposition tool 200 may, for example, include a reaction chamber 202 , a spin base 204 , a wafer carrier 206 , a heater 218 , and a gas spray head 220 .

[0037] In the metalorganic chemical vapor deposition tool 200 , the reaction chamber 202 generally has an opening 226 to facilitate placing several wafers on the wafer carrier 206 through the opening 226 . In addition, according to process requirements, the reaction chamber 202 may optionally include at least one exhaust port 222 . The exhaust port 222 can be disposed, for example, at the lower part of the reaction chamber 202 , so as to facilitate the discharge of...

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Abstract

The invention relates to a metal-organic chemical vapor deposition machine. The deposition machine comprises a reaction chamber body, a rotating seat, a crystal plate tray, a heater and a jet head. The reaction chamber body is provided with an opening. The rotating seat is arranged in the reaction chamber body. The crystal plate tray is arranged on the rotating seat and is driven by the rotating seat to rotate. The crystal plate tray comprises multiple loading zones with at least two different diameters and the loading zones are arranged on the surface of the crystal plate tray and can load multiple corresponding crystal plates. The heater is arranged below the crystal plate tray and located in the rotating seat. The jet head is covered on the opening of the reaction chamber body, and discharges reaction gas towards the surface of the crystal plate tray. The metal-organic chemical vapor deposition machine can utilize a usage space of a crystal plate tray effectively, greatly improve a production efficiency of an element, increase a production capacity, and give consideration to a utilization rate of a crystal plate tray space and a utilization of a large size crystal plate thereby reducing a production cost.

Description

technical field [0001] The present invention relates to a chemical vapor deposition (Chemical Vapor Deposition; CVD) machine, and in particular to a metal-organic chemical vapor deposition (Metal-Organic CVD; MOCVD) machine. Background technique [0002] In the manufacturing process of light-emitting diodes (LEDs), since the quality of the semiconductor material layers in the light-emitting diodes is closely related to the luminous quality of the light-emitting diodes, the epitaxial process of each semiconductor material layer is a very important step. In the epitaxy process of light emitting diodes, it is generally necessary to use a wafer susceptor to load wafers. [0003] Generally, in the current wafer carrier technology, a single wafer carrier can only load wafers of a single size. In terms of the current light-emitting diode epitaxy process, the wafer carrier is designed to cover the entire wafer carrier with a 2-inch wafer carrier area. Wherein, due to the small siz...

Claims

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Application Information

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IPC IPC(8): C23C16/54C23C16/18
Inventor 江俊德林明宏
Owner 佛山市奇明光电有限公司
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