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Method for preparing tin-oxide mono-crystal film

A single crystal thin film and tin oxide technology, applied in the field of preparation of tin oxide single crystal thin films, can solve the problems of difficult to obtain tin oxide thin film materials with inter-band emission properties, difficult to obtain performance P-type tin oxide thin film materials, and many film defects. , to achieve the effects of easy and precise control of process conditions, excellent optoelectronic properties, and easy P-type doping

Inactive Publication Date: 2007-11-14
SHANDONG UNIV
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  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows for precise controlled processing parameters during production of an opaque metal oxynaphthalate layer on gallium nitride substrates without causing any issues like poor quality or instabilities over time. It also provides stable films that have superior characteristics such as strong bonding ability, wide range of applications, low dark current output, etc., making them ideal materials for use in electronic components used in various industries including display technologies.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the efficiency or quality of producing pure tungsten dioxynaphosphorus type titanium oxides (TiON). Current techniques involve expensive processes like vacuum arc evaporation, which require specific conditions during production. Additionally, these techniques often result in contamination issues due to impurities from other sources.

Method used

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  • Method for preparing tin-oxide mono-crystal film
  • Method for preparing tin-oxide mono-crystal film

Examples

Experimental program
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Effect test

Embodiment 1

[0044] Example 1: Tin oxide single crystal thin film material was prepared by MOCVD technology.

[0045] (1) First pump the reaction chamber of the MOCVD equipment to a high vacuum state of 5×10 -4 Pa, heat the sapphire substrate to 650°C;

[0046] (2) Open the valve of the nitrogen cylinder and feed nitrogen into the reaction chamber (background N 2 ) 400sccm, 30 minutes, make reaction chamber pressure be 50Torr;

[0047](3) Open the valve of the oxygen cylinder, adjust the flow rate of oxygen to 50 sccm, and keep it for 10 minutes;

[0048] (4) Use tetraethyltin [Sn(C 2 h 5 ) 4 ] As an organometallic source, open the valve of the tin source bottle, adjust the flow rate of carrier gas (nitrogen) to 30 sccm, and keep for 10 minutes;

[0049] (5) Pass oxygen and organometallic tin sources into the reaction chamber simultaneously, and keep the film growth time as 180 minutes;

[0050] (6) Close the valves of the tin source bottle and the oxygen bottle after the reaction, ...

Embodiment 2

[0053] Embodiment 2: comparative example

[0054] MOCVD technology prepares tin oxide thin film material, and preparation method and processing condition are identical with embodiment 1, just be substrate material with the single crystal silicon chip of polishing, use Sn(C 2 h 5 ) 4 As an organometallic source, the tin oxide film prepared under the condition of 650°C has a polycrystalline structure, the film growth time is 180 minutes, and the film thickness is 120nm. The carrier mobility is 11cm 2 V -1 S -1 , the average relative transmittance in the visible light range exceeds 83%. No luminescence generated by interband transitions was observed in room temperature photoluminescence spectroscopy.

Embodiment 3

[0055] Embodiment 3: comparative example

[0056] MOCVD technology prepares tin oxide thin film material, and preparation process condition is identical with embodiment 1, and difference is that the single crystal quartz of polishing is substrate material, uses Sn(C 2 h 5 ) 4 As an organometallic source, the tin oxide film prepared at 650°C has a polycrystalline structure, the film growth time is 180 minutes, and the film thickness is 115nm. The thin film carrier mobility is 8cm 2 V -1 S -1 , the average relative transmittance in the visible light range exceeds 83%. No luminescence generated by interband transitions was observed in room temperature photoluminescence spectroscopy.

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Abstract

The present invention pertains to a single-crystal film of tin oxide synthesis, are semiconductor optoelectronics materials technology. Using metal organic chemical vapor deposition process to tetraethyl tin [Sn (C2H5) 4] for the metal organic source of nitrogen used as a carrier gas, as oxidation by oxygen gas, used metal-organic chemical vapor deposition equipment in a vacuum conditions In the epitomical growth on sapphire substrates tin oxide crystal thin films; prepared for the crystal structure of thin film materials, optoelectronics excellent performance, high stability, good adhesion properties, because of its band gap wider than GaN and ZnO, suitable for use tin oxide to manufacture electronic devices, as well as UV-transparent semiconductor devices.

Description

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Claims

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Application Information

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Owner SHANDONG UNIV
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