Method for preparing tin oxide single crystal film with orthogonal structure

A single crystal film and tin oxide technology is applied in the field of preparation of orthogonal structure tin oxide single crystal film to achieve the effects of good uniformity and repeatability, less lattice defects and high stability

Inactive Publication Date: 2010-06-16
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The preparation of epitaxial tin oxide single crystal thin film requires a substrate material that matches the lattice of tin oxide. Currently, the most commonly used glass and silicon substrate materials cannot meet the above requirements.

Method used

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  • Method for preparing tin oxide single crystal film with orthogonal structure
  • Method for preparing tin oxide single crystal film with orthogonal structure
  • Method for preparing tin oxide single crystal film with orthogonal structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1: Orthogonal structure tin oxide single crystal thin film material was prepared by MOCVD technology.

[0043] (1) First pump the reaction chamber of the MOCVD equipment to a high vacuum state of 5×10 -4 Pa, heat the substrate to 600°C;

[0044] (2) Open the valve of the nitrogen cylinder and feed nitrogen into the reaction chamber (background N 2 )300sccm, 30 minutes, make reaction chamber pressure be 120Torr;

[0045] (3) Open the valve of the oxygen cylinder, adjust the flow rate of oxygen to 30 sccm, and keep it for 10 minutes;

[0046] (3) Open the valve of the tin source bottle, adjust the flow rate of the carrier gas (nitrogen) to 30 sccm, and keep it for 10 minutes;

[0047] (4) Pass oxygen and organometallic tin sources into the reaction chamber simultaneously, and keep the film growth time as 300 minutes;

[0048] (5) Close the valves of the tin source bottle and the oxygen bottle after the reaction, and flush the pipeline with nitrogen for 20 m...

Embodiment 2

[0058] Single crystal tin oxide thin film materials were prepared by MOCVD technology. The preparation process is the same as in Example 1, except that the reaction chamber pressure is 40 Torr, the organometallic source temperature is 20°C, the organometallic source carrier gas flow rate is 40 sccm, the oxygen flow rate is 25 sccm, and the background N 2 The flow rate is 300 sccm, and the film growth time is 120 minutes. The double-sided polished yttrium-doped zirconia single crystal (100) surface is used as the substrate material, Sn(C 2 h 5 ) 4 As an organometallic source, the tin oxide film prepared at a substrate temperature (growth temperature) of 650°C is a single crystal film with an orthogonal structure, the thickness of the film is 210nm, and the carrier mobility of the film is 42cm 2 V -1 the s -1 , the average relative transmittance in the visible light range exceeds 85%.

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Abstract

The invention relates to a method for preparing a tin oxide single crystal film with an orthogonal structure, which belongs to the technical field of semiconductor photoelectron materials. The epitaxial preparation method for the tin oxide single crystal film with the orthogonal structure adopts an MOCVD process, uses Sn(C2H5)4 as an organic metal source, uses nitrogen as carrier gas, uses oxygen as oxidizing gas, and uses MOCVD equipment to epitaxially grow the tin oxide single crystal film with the orthogonal structure on an yttrium-doped zirconia single crystal substrate. The material prepared by the invention has the advantages of good photoelectric performance, high stability, good attachment performance and broad application prospect.

Description

(1) Technical field [0001] The invention relates to a method for preparing a tin oxide single crystal film with an orthogonal structure, belonging to the technical field of semiconductor optoelectronic materials. (2) Background technology [0002] Tin oxide (SnO 2 ) is a wide bandgap semiconductor material with a direct bandgap. Compared with gallium nitride (GaN, Eg ~ 3.4eV) and zinc oxide (ZnO, Eg ~ 3.37eV, exciton binding energy ~ 60meV), tin oxide materials not only have a wider band gap and higher excitonic Binding energy (~3.7eV and ~130meV at room temperature, respectively), and has the advantages of low preparation temperature and stable physical and chemical properties, so tin oxide is an optional material for the preparation of ultraviolet optoelectronic devices. The previous research on tin oxide mainly focused on the aspects of transparent conductivity, gas-sensing properties and nanomaterial properties. At present, tin oxide thin film materials are mainly pol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B29/16H01L51/40
Inventor 马瑾孔令沂栾彩娜
Owner SHANDONG UNIV
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