A kind of growth method of gan nanowire

Abstract

The invention discloses a method for growing GaN nanowires. The steps of the method include: pre-introducing trimethyl indium on a quartz substrate or a substrate coated with a layer of silicon dioxide film on the surface, so that a liquid is formed on the surface of the substrate. Phase indium drop, and then feed trimethylgallium and ammonia gas at the same time to form alloy droplets; finally feed trimethylgallium, ammonia gas and silane at the same time to grow GaN nanowires on the alloy droplets. The method of the present invention uses trimethyl indium as the source of indium catalyst, and realizes the controllable growth of high-quality GaN nanowires on cheap and easy-to-obtain quartz or a substrate coated with a silicon dioxide film on the surface; and belongs to in-situ introduction , without the cumbersome process of transferring and cleaning between different devices, effectively avoiding the contamination of samples during the transfer process; and without the need for complicated buffer layer design, the operation is simple and easy, which is conducive to industrial production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material growth, and relates to a method for growing GaN nanowires, in particular to a method for growing GaN nanowires on a quartz substrate or a substrate coated with a silicon dioxide film. Background technique [0002] GaN-based semiconductor materials have a wide direct bandgap, and are widely used in high-frequency, high-temperature, high-power electronic devices and Optoelectronic devices and other fields have become the third generation of semiconductor materials after the first generation of germanium (Ge), silicon (Si) semiconductor materials and the second generation of gallium arsenide (GaAs), indium phosphide (InP) compound semiconductor materials. [0003] MOCVD (Metal Organic Compound Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) are two main techniques for growing high-quality semiconductor materials, which are unmatched by other techniques. Especially MOCVD te...

AI Technical Summary

Problems solved by technology

For sapphire, its price is more expensive, and it is also difficult to prepare large-sized sapphire substrates

On the other hand, silicon substrates are cheaper and have a mature preparation process, so large-sized silicon substrates can be produced. However, when GaN is grown on a silicon substrate, it is easy to form remelting between Ga and silicon atoms on the surface of the substrate, and the crystal lattice and thermal expansion rate Large mismatch requires complex buffer layer design

For silicon carbide, it is too expensive and not suitable for large-scale applications

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