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Method for preparing InGaN/AlGaN MQW ultraviolet LED

A purple light and pressure technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high preparation cost, limited application, time-consuming, etc., and achieve the effect of low preparation cost and wide adjustment range

Active Publication Date: 2016-12-07
江苏晶曌半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are costly and time-consuming, and the performance of UV LEDs prepared by general methods is poor, which limits their application in high-performance detectors and lasers.

Method used

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  • Method for preparing InGaN/AlGaN MQW ultraviolet LED
  • Method for preparing InGaN/AlGaN MQW ultraviolet LED

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Embodiment 1

[0046] Such as figure 1 As shown, this embodiment is a method for preparing high-performance InGaN / AlGaN MQW violet LED, using blue ammonia, trimethylindium (TMIn) with a purity of 99.9999% and trimethylgallium (TMGa) with a purity of 99.9999% as N , In, Ga sources, respectively SiH 4 and Cp2Mg as n and p-type dopants, comprising the steps of:

[0047] Step 1: Pass N at a temperature of 1070°C and a pressure of 150torr 2 Baking for 20min, nitriding the sapphire substrate;

[0048] Step 2: Lower the temperature of the sapphire substrate after nitriding in step 1 to 515°C and a pressure of 800torr, then grow a GaN buffer layer with a thickness of 15nm on the substrate, then raise the temperature to 1030°C and a pressure of 400torr to regenerate the GaN buffer layer Crystallization and re-growth 1.8um u-GaN nucleation layer, the raw materials are TMGa and NH 3 ;

[0049] Step 3: Raise the temperature to 1070°C and the pressure is 200torr to grow a low Si-doped n-GaN layer wi...

Embodiment 2

[0065] Such as figure 1 As shown, this embodiment is a method for preparing a high-performance InGaN / AlGaN MQW violet LED, using blue ammonia, trimethylindium (TMIn) with a purity of 99.9999% and trimethylgallium (TMGa) with a purity of 99.99999% as N , In, Ga sources, respectively SiH 4 and Cp2Mg as n and p-type dopants, comprising the steps of:

[0066] Step 1: Pass N at a temperature of 1080°C and a pressure of 150torr 2 Baking for 25min, nitrided SiC substrate;

[0067] Step 2: Cool down the SiC substrate after nitriding in step 1 to 525°C and a pressure of 800torr, then grow a GaN buffer layer with a thickness of 30nm on the substrate, then raise the temperature to 1040°C and a pressure of 400torr to regenerate the GaN buffer layer Crystallization and re-growth 2.1um u-GaN nucleation layer, the raw materials are TMGa and NH 3 ;

[0068] Step 3: Raise the temperature to 1080°C and the pressure is 200torr to grow a low Si-doped n-GaN layer with a thickness of 60nm, and...

Embodiment 3

[0084] Such as figure 1 As shown, this embodiment is a method for preparing high-performance InGaN / AlGaN MQW violet LED, using blue ammonia, trimethylindium (TMIn) with a purity of 99.9999% and trimethylgallium (TMGa) with a purity of 99.9999% as N , In, Ga sources, respectively SiH 4 and Cp2Mg as n and p-type dopants, comprising the steps of:

[0085] Step 1: Pass N at a temperature of 1090°C and a pressure of 150torr 2 Baking for 30min, nitrided Si substrate;

[0086] Step 2: Cool down the Si substrate after nitriding in Step 1 to 535°C and a pressure of 800torr, then grow a GaN buffer layer with a thickness of 50nm on the substrate, then raise the temperature to 1050°C and a pressure of 400torr to recrystallize the GaN buffer layer , and then grow a 2.5um u-GaN nucleation layer, the raw materials are TMGa and NH 3 ;

[0087] Step 3: Raise the temperature to 1090°C and the pressure is 200torr to grow a low Si-doped n-GaN layer with a thickness of 100nm, and then grow a ...

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Abstract

The invention discloses a method for preparing a high-performance InGaN / AlGaN MQW ultraviolet LED. Blue ammonia, high-purity trimethylindium and high-purity trimethyl gallium serve as an N source, an In source and a Ga source respectively, and SiH4 and Cp2Mg serve as an n type doping agent and a p type doping agent respectively. The method comprises the following steps that firstly, a sapphire substrate or a SiC substrate or a Si substrate is nitrided; secondly, a buffering layer is grown and crystallized, and then a uGaN nucleating layer is grown; thirdly, a low Si-doped n-GaN layer is grown first, and then a high Si-doped n+GaN layer is grown; fourthly, an n-AlGaN layer is grown; fifthly, a Si-doped n+GaN layer is grown, and then an nGaN layer without Si is grown; sixthly, three cycles of InGaN / GaN superlattices without Al are grown, and then eight cycles of Al-doped InGaN / GaN is grown; seventhly, a PAlGaN layer is grown; eighthly, a Mg-doped P+GaN layer is grown; ninthly, a high Mg-doped P++GaN layer is grown. According to the method, InGaN / AlGaN MQW ultraviolet LED epitaxy pieces of the specific structure are grown with an LP MOCVD system, the preparing cost is low, time is saved, the prepared ultraviolet LED is good in performance, and the ultraviolet LED epitaxy industrialization is promoted.

Description

【Technical field】 [0001] The invention belongs to the technical field of epitaxial growth of LED chips, and in particular relates to a method for preparing high-performance InGaN / AlGaNMQW violet LEDs. 【Background technique】 [0002] InGaN-based violet and ultraviolet LEDs are widely used in nitride white LED lighting, using violet and ultraviolet LEDs to excite red, green and blue phosphors. At present, it is mainly prepared by ELO technology and LEPS technology, and purple and ultraviolet LEDs have been successfully developed. However, the preparation cost of these methods is high and time-consuming, and the performance of the ultraviolet LED prepared by the general method is poor, which limits its application in high-performance detectors and lasers. 【Content of invention】 [0003] The technical problem to be solved by the present invention is to provide a method for preparing a high-performance InGaN / AlGaN MQW violet LED in view of the deficiencies in the above-mention...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/0075
Inventor 田进刘波波田伟赵俊李谊
Owner 江苏晶曌半导体有限公司
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