The invention discloses a fabrication method of a vertical-structure blue-light LED chip. The fabrication method comprises the steps of firstly, taking a substrate with a low stress buffer layer as a growth foundation; secondly, sequentially growing other epitaxial layers on a smooth u-GaN surface to obtain a blue-light LED epitaxial wafer; and finally, fabricating a vertical-structure LED from the blue-light LED epitaxial wafer, wherein the step of fabricating the vertical-structure LED mainly comprises the following steps of depositing and forming a reflecting mirror on a surface of the LED epitaxial wafer, fabricating a metal electrode pattern, bonding a surface of the metal electrode pattern on a metal substrate by a high-temperature metal bonding process, stripping the substrate by a laser lift-off technology, and fabricating another metal electrode pattern on the u-GaN surface. The vertical-structure LED fabricated according to the method is relatively high in single-chip power, the quantity of LEDs in series and in parallel is reduced, the user demand can be satisfied by a single chip, meanwhile, a driving circuit design is simplified, the reliability of an LED product is greatly improved, and the service lifetime of the LED product is greatly prolonged.