The application discloses a preparation method of high-purity triethyl
indium and relates to the technical field of
metal organic source synthesis. Nowadays, high-purity
indium source is a key
raw material for MOCVD technology. Currently, the commonly used
indium source is trimethyl indium. However, trimethyl indium is
solid at
room temperature, which easily causes problems such as excessive
solid indium source residue, low
solid molecule overflow rate, and hardening and channeling. Therefore, the solid indium source is worse than liquid source in vapor saturation and source content stability. In the application, the
halide of indium and triethyl aluminum are reacted to generate triethyl indium under the protection of
inert gas. The crude triethyl indium is purified by reduced pressure
distillation. The finished triethyl indium is obtained by further purification. The whole process is simple in operation. In addition, the purity of the product is improved under the protection of
inert gas, so that the preparation of triethyl indium is not affected by other solvents.