Method for low-temperature deposition of InN film on glass substrate

A glass substrate, low temperature technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of difficult to reduce device cost, high price of sapphire substrate, hinder the development of InN material devices, etc. The effect of low cost and good electrical performance

Active Publication Date: 2013-10-02
辽宁太阳能研究应用有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As we all know, the price of sapphire substrate is relatively high. Using it as the substrate of InN material makes it difficult to reduce the cost of InN material-based devices, which seriously hinders the development of InN material devices.

Method used

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  • Method for low-temperature deposition of InN film on glass substrate
  • Method for low-temperature deposition of InN film on glass substrate
  • Method for low-temperature deposition of InN film on glass substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0036] After the Corning glass substrate was ultrasonically cleaned with acetone, ethanol and deionized water in sequence, it was blown dry with nitrogen and sent to the reaction chamber.

[0037] Evacuate the reaction chamber to 8.0 × 10 -4 Pa, when the substrate is not heated to a room temperature of 20°C, trimethylindium and nitrogen carried by hydrogen are introduced into the reaction chamber, and the flow ratio of trimethylindium and nitrogen reaction source is controlled at 2:100, and the flow rate is determined by the mass flowmeter Control, the flow parameters are 2sccm and 100sccm respectively; the total pressure of the control gas is 0.8Pa; the electron cyclotron resonance power is 650W, the reaction is 30min, and the InN photoelectric thin film on the Corning glass substrate is obtained.

[0038] After the experiment, the Hall test equipment was used to test and analyze the mobility and carrier concentration of the film. The results are shown in Table 1. It can be...

Embodiment 2

[0042] After the Corning glass substrate was ultrasonically cleaned with acetone, ethanol and deionized water in sequence, it was blown dry with nitrogen and sent to the reaction chamber.

[0043] Evacuate the reaction chamber to 8.0 × 10 -4 Pa, the substrate is heated to 100°C, trimethylindium and nitrogen carried by hydrogen are introduced into the reaction chamber, and the flow ratio of trimethylindium and nitrogen reaction source is controlled at 2:150, which is controlled by the flow rate of the mass flow meter. The parameters are 2sccm and 150sccm respectively; the total pressure of the control gas is 2.0Pa; the electron cyclotron resonance power is 650W, and the reaction is 70min to obtain the InN photoelectric thin film on the Corning glass substrate.

[0044] After the experiment, the Hall test equipment was used to test and analyze the mobility and carrier concentration of the film. The results are shown in Table 2. It can be seen from Table 2 that the InN thin fil...

Embodiment 3

[0048] After the Corning glass substrate was ultrasonically cleaned with acetone, ethanol and deionized water in sequence, it was blown dry with nitrogen and sent to the reaction chamber.

[0049] Evacuate the reaction chamber to 8.0 × 10 -4 Pa, the substrate is heated to 200°C, trimethylindium and nitrogen carried by hydrogen gas are introduced into the reaction chamber, and the flow ratio of trimethylindium and nitrogen reaction source is controlled at 3:200, which is controlled by the flow rate of the mass flow meter. The parameters are 3 sccm and 200 sccm respectively; the total pressure of the control gas is 1.5Pa; the electron cyclotron resonance power is 650W, and the reaction is 120min, and the InN photoelectric thin film on the Corning glass substrate is obtained.

[0050] After the experiment, the Hall test equipment was used to test and analyze the mobility and carrier concentration of the film. The results are shown in Table 3. It can be seen from Table 3 that th...

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Abstract

The invention belongs to the technical field of novel photoelectric material deposition and preparation, and provides a method for the low-temperature deposition of an InN film on a glass substrate, from which the InN photoelectric film with favorable electrical properties can be prepared. The method comprises the following steps: 1), allowing the glass substrate to be subjected to acetone, ethanol, deionized water and ultrasonic cleaning, and then feeding to a reaction chamber after being dried by the nitrogen gas; 2), vacuumizing the reaction chamber by an ECR-PEMOCVD system, heating the glass substrate to 20-400 DEG C, pumping trimethylindium carried by hydrogen, and nitrogen gas into the reaction chamber at the flow ratio of (2-4):(100-200), wherein the overall gas pressure is controlled at 0.8-2.0 Pa, and the electronic convolution resonance vibration reaction is carried out for 30 min-3 h. Due to the adoption of the method, the InN photoelectric film on the glass substrate is prepared.

Description

technical field [0001] The invention belongs to the technical field of deposition and preparation of novel photoelectric materials, and in particular relates to a method for depositing an InN thin film on a glass substrate at a low temperature. Background technique [0002] Indium nitride (InN) is an important member of group III nitrides. Compared with GaN and AlN, InN has the highest mobility and peak rate, and has unique advantages in the application of high-speed and high-frequency transistors and other electronic devices. ; Its room temperature band gap is located in the near-infrared region, and it is also suitable for preparing optoelectronic devices such as high-efficiency solar cells, semiconductor light-emitting diodes, and optical communication devices. However, due to the low decomposition temperature of InN, a low growth temperature is required, and the decomposition temperature of nitrogen source is high, so generally InN films are grown on some substrates such...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/44
Inventor 郑洪鞠振河张东
Owner 辽宁太阳能研究应用有限公司
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