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III nitride white light LED

A technology of light-emitting diodes and diodes, applied in nano-optics, electrical components, nano-technology, etc., can solve problems such as non-white light

Inactive Publication Date: 2008-06-25
AGENCY FOR SCI TECH & RES +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the technique of Chua et al. can only cover a small wavelength range (480nm to 530nm) and cannot be used to generate white light

Method used

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  • III nitride white light LED
  • III nitride white light LED

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Embodiment Construction

[0022] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to examples shown in the accompanying drawings.

[0023] The invention utilizes the epitaxial technology to prepare the diode. The diode of the present invention utilizes quantum dots to generate electroluminescence with a broad peak of 400nm to 750nm from a PN junction.

[0024] Quantum dots can be defined as extremely small matter, so small that the addition or removal of an electron changes its properties in some effective way. Alternatively, quantum dots can be viewed as very small devices that confine (ie, confine) a small number (eg, only one) of free electrons. Quantum dots typically have dimensions on the order of nanometers. That is, quantum dots can range in size from 5 to 200 nm, with 20 to 80 nm being typical in many applications.

[0025] Using an epitaxial growth process, quantum dots can be grown with high band gaps within the surrounding material pro...

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Abstract

A white light-emitting diode prepared by metal-organic chemical vapor deposition (MOCVD), which can cover indium nitride (InN) quantum dots (QD) and Indium-rich indium gallium nitride (InGaN) quantum dots produce broadband emission covering the entire visible spectral region by introducing trimethylindium (TMIn) as nuclei for growing QDs within the QW, The release of at least one of triethylindium (TEIn) and ethyldimethylindium (EDMIn) is achieved. Therefore, the diode can emit white light in the range of 400nm to 750nm by adjusting the In release parameters.

Description

technical field [0001] The invention relates to an optoelectronic device and a preparation method, in particular to a white light emitting diode. Background technique [0002] Light emitting diodes (LEDs) are widely used in optical displays, traffic lights, data storage, communications and general applications. Current applications for white light emitting diodes include automotive vehicle dashboards and backlighting for liquid crystal displays (LCDs). An important goal for white light-emitting diodes is to increase luminosity levels as a replacement for incandescent lamps, since LEDs are smaller, have higher efficiency and have a lifespan approximately 50 times longer than conventional light bulbs. [0003] Conventional white light-emitting diodes are generally produced according to two methods. In one approach, three separate LED chips are housed in a single LED body, where the light from the red chip, the blue-green chip, and the blue chip are combined to produce white ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/20H01L29/15H01L33/06H01L33/12H01L33/32
CPCB82Y10/00H01L33/32H01L21/02458H01L21/0262H01L21/02576H01L21/02505H01L21/02579H01L33/06B82Y20/00H01L21/0254H01L21/0237
Inventor 蔡树仁陈鹏高须贺英良
Owner AGENCY FOR SCI TECH & RES
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