Preparation method of InGaN/GaN multi-quantum well-based red light LED structure

Abstract

The invention discloses a preparation method of an InGaN / GaN multi-quantum well-based red light LED structure. The preparation method comprises the following steps: (1) sequentially growing a low-temperature GaN buffer layer, a non-doped GaN layer, an n-type GaN layer and an InGaN / GaN superlattice stress release layer on a sapphire substrate; (2) growing an InGaN / GaN multi-quantum well active region, wherein the growth process of each InGaN well layer is as follows: 1, at 680-710 DEG C, gradually increasing the flow rate of trimethyl indium from 0 to 600-700sccm, and growing a first sub-layer;2, growing a second sub-layer under the condition that the temperature and the maximum trimethyl indium flow rate in the step 1 are not changed; 3, performing cooling to 20-30 DEG C, and growing a third sub-layer; (3) sequentially growing a p-type AlGaN electronic barrier layer, a p-type GaN layer and a p-type InGaN ohmic contact layer. According to the invention, the spontaneous radiation efficiency is improved, the state density of a long-wavelength radiation area is increased, and the radiation light is expanded in the long-wavelength direction.

Description

technical field [0001] The invention relates to a method for preparing an InGaN / GaN multi-quantum well-based red light LED structure by metal organic chemical vapor deposition (MOCVD), belonging to the technical field of microelectronics. Background technique [0002] In recent years, white LEDs have been widely used in fields such as liquid crystal displays and solid-state lighting. There are three main ways to use LEDs to achieve white light emission: one is to integrate three LED chips that emit blue light, green light and red light (three primary colors) into a whole LED to emit white light; the other is to use violet LED chips as the basic light source. Violet light excites a specific phosphor to emit red, green, and blue primary colors at the same time to achieve white light emission; the third is to use the blue light emitted by the blue LED chip as the basic light source to excite the phosphor to emit yellow light, so that the blue light emitted by the LED It mixes ...

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Problems solved by technology

However, this method does not adjust the energy band of the InGaN well layer, and does not stop the growth after the growth of the well layer, which will lead to a strong quantum-confined Stark effect and a high strain energy in the active region. It is beneficial for the In atoms on the surface of the well layer to relax to a suitable lattice position and reach thermodynamic equilibrium

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