Method for industrially preparing trimethyl indium

A technology of trimethylindium and haloalkane, which is applied in the field of preparation of trimethylindium, can solve the problems of low reaction conversion efficiency, expensive indium trichloride, and high cost of raw materials, and achieves a simple and stable reaction suitable for large-scale industrial production. The effect of high reaction yield
CN102020668AActive Publication Date: 2011-04-20JIANGSU NATA OPTO ELECTRONICS MATERIAL
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
JIANGSU NATA OPTO ELECTRONICS MATERIAL
Publication Date
2011-04-20

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Abstract

The invention relates to a method for industrially preparing trimethyl indium, The method is characterized by comprising the following steps: putting indium-magnesium alloy materials into a reaction kettle filled with inert gases; adding alkyl halide step by step while stirring in the presence of ether solvents; controlling the return velocity of the solvents by controlling the dropwise adding velocity of alkyl halide; vaporizing the solvents after the reaction is finished; obtaining the compound of trimethyl indium and ethers under the condition of reduced pressure; and finally decompoundingthe compound to obtain the trimethyl indium. The process is simple and steady in reaction, easy to control, high in reaction yield and very safe in reaction process as the raw materials adopted in the reaction process do not contain the materials liable to spontaneous combustion, thus being especially suitable for large-scale industrial production.
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Description

technical field

[0001] The invention relates to a method for producing trimethylindium as a raw material in metalorganic chemical vapor deposition (MOCVD), in particular to a method for industrially preparing trimethylindium, and belongs to the technical field of trimethylindium preparation. Background technique

[0002] Metal-organic compounds such as high-purity trimethylindium are important raw materials for growing optoelectronic materials in the process of metal-organic chemical vapor deposition (MOCVD) and chemical beam epitaxy (CBE), and are widely used in the growth of indium phosphide, indium gallium arsenic nitrogen ( InGaAsN), indium gallium arsenide (InGaAs), indium gallium phosphide (InGaP) and other compound semiconductor thin film materials. Pure trimethyl indium is solid at room temperature. When used for MOCVD, the solid source needs to be packaged in a steel cylinder, and then the temperature of the steel cylinder is controlled to make its vapor pressure re...

Claims

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