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Industrial purification method of trimethylindium

A technology of trimethyl indium and a purification method, applied in the field of industrial purification, can solve the problems of high cost, troublesome operation process and the like, and achieve the effects of a smooth reaction process, easy acquisition and high dissociation efficiency

Active Publication Date: 2014-12-10
安徽亚格盛电子新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for industrialized purification of trimethylindium to solve the problems of troublesome operation process and high cost of industrialized purification of trimethylindium

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Under an inert atmosphere, add 2,500 grams of trimethylindium ether complex to the reaction kettle, and add 3,000 grams of cyclohexane dropwise to the reaction kettle under stirring conditions, and control the rate of dropping to keep the temperature between 70°C , and the dissociated ether was collected during the dropwise addition. After complete dissociation of diethyl ether, 1590 g of high-purity trimethylindium was obtained by rectification under reduced pressure (rectification pressure: 150mmHg, rectification temperature: 110°C). The yield was 93.0% based on trimethylindium.

Embodiment 2

[0018] Under an inert atmosphere, add 2,500 grams of trimethylgallium to the reactor, and add 1,500 grams of cyclohexane dropwise to the reactor under stirring conditions, and control the rate of dropping to keep the temperature between 70°C. Collect the dissociated ether. After complete dissociation of diethyl ether, 1540 g of high-purity trimethylindium was obtained by rectification under reduced pressure (rectification pressure: 150mmHg, rectification temperature: 110°C), with a yield of 90.1% based on trimethylgallium.

Embodiment 3

[0020] Under an inert atmosphere, add 2,500 grams of trimethylindium ether complex to the reaction kettle, and add 2,800 grams of cyclooctane dropwise to the reaction kettle under stirring conditions, and control the dropping rate to keep the temperature between 70°C , and the dissociated ether was collected during the dropwise addition. After complete dissociation of diethyl ether, 1520 g of high-purity trimethylindium was obtained by rectification under reduced pressure (rectification pressure: 150 mmHg, rectification temperature: 110°C). The yield was 89.0% based on trimethylindium.

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PUM

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Abstract

The invention discloses an industrial purification method of trimethylindium. The industrial purification method comprises the following steps: adding a trimethylindium.ether complex in a reactor protected by an inert atmosphere, and then adding cycloalkane CnH2n (n is equal to or greater than 6) and reacting, wherein the temperature of the reaction system is always kept at 30-100 DEG C, and during the dropwise adding process, the dissociated ether is cooled by virtue of a condenser and is directly received in a receiving tank to achieve the complete dissociation of ether from trimethylindium. The reagents adopted by the method disclosed by the invention are conventional reagents and are inexpensive and easily available, the reaction process is mild and has no security risk; and as ether is continuously separated from the reaction system, the dissociation efficiency of ether is improved. No waste is generated in the reaction, the cost is reduced and no environment pollution is caused.

Description

technical field [0001] The invention relates to the field of industrial purification, in particular to an industrial purification method of trimethyl indium. Background technique [0002] The indium phosphide semiconductor material has the advantages of high electronic limit drift speed, radiation resistance, and good thermal conductivity. Compared with gallium arsenide materials, it has the characteristics of high breakdown electric field, thermal conductivity, and high average electron velocity. Indium phosphide semiconductor material has a wide bandgap structure, and devices made of this material can amplify higher frequency and shorter wavelength signals. Indium phosphide is a more advanced semiconductor material than gallium arsenide. Promote the development of the satellite communication industry to higher frequency bands. [0003] Indium phosphide clearly shows better performance than gallium arsenide in optical fiber manufacturing, millimeter wave and even wireless...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F5/00
Inventor 曹季徐昕
Owner 安徽亚格盛电子新材料有限公司
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