A kind of method for preparing ingan/algan MQW violet light LED

A technology of ultraviolet light and pressure, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high preparation cost, limited application, poor performance of ultraviolet LED, etc., and achieve the effect of low preparation cost and wide adjustment range

Active Publication Date: 2018-08-31
江苏晶曌半导体有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods are costly and time-consuming, and the performance of UV LEDs prepared by general methods is poor, which limits their application in high-performance detectors and lasers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of method for preparing ingan/algan MQW violet light LED
  • A kind of method for preparing ingan/algan MQW violet light LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as figure 1 As shown in this embodiment, a method for preparing high-performance InGaN / AlGaN MQW violet LEDs is based on blue ammonia, trimethyl indium (TMIn) with a purity of 99.9999% and trimethylgallium (TMGa) with a purity of 99.9999% as N , In, Ga sources, respectively SiH 4 And Cp2Mg as n and p type dopants, including the following steps:

[0047] Step 1: Pass N at a temperature of 1070℃ and a pressure of 150torr 2 Bake for 20min, nitride sapphire substrate;

[0048] Step 2: Cool down the nitrided sapphire substrate in step 1 to 515°C and a pressure of 800 torr, and then grow a GaN buffer layer with a thickness of 15 nm on the substrate, and then heat up to 1030°C and a pressure of 400 torr to make the GaN buffer layer renew Crystallize and re-grow 1.8um u-GaN nucleation layer, raw materials are TMGa and NH 3 ;

[0049] Step 3: Raise the temperature to 1070℃, the pressure is 200torr, grow a low-Si-doped n-GaN layer with a thickness of 20nm, and then grow a high-Si-...

Embodiment 2

[0065] Such as figure 1 As shown in this embodiment, a method for preparing high-performance InGaN / AlGaN MQW violet LEDs is based on blue ammonia, trimethyl indium (TMIn) with a purity of 99.9999% and trimethylgallium (TMGa) with a purity of 99.99999% as N , In, Ga sources, respectively SiH 4 And Cp2Mg as n and p type dopants, including the following steps:

[0066] Step 1: Pass N at a temperature of 1080 ℃ and a pressure of 150 torr 2 Baking for 25min, nitride SiC substrate;

[0067] Step 2: Cool down the nitrided SiC substrate in step 1 to 525°C and a pressure of 800 torr, and then grow a 30nm thick GaN buffer layer on the substrate, and then heat up to 1040°C and a pressure of 400 torr to restore the GaN buffer layer Crystallize and re-grow 2.1um u-GaN nucleation layer, raw materials are TMGa and NH 3 ;

[0068] Step 3: Raise the temperature to 1080°C, the pressure is 200torr, grow a low-Si-doped n-GaN layer with a thickness of 60nm, and then grow a high-Si-doped n+GaN layer with...

Embodiment 3

[0084] Such as figure 1 As shown in this embodiment, a method for preparing high-performance InGaN / AlGaN MQW violet LEDs is based on blue ammonia, trimethyl indium (TMIn) with a purity of 99.9999% and trimethylgallium (TMGa) with a purity of 99.9999% as N , In, Ga sources, respectively SiH 4 And Cp2Mg as n and p type dopants, including the following steps:

[0085] Step 1: Pass N at a temperature of 1090℃ and a pressure of 150torr 2 Bake for 30min, nitride Si substrate;

[0086] Step 2: Cool down the Si substrate after step 1 to 535°C and a pressure of 800 torr, then grow a GaN buffer layer with a thickness of 50nm on the substrate, and then heat up to 1050°C and a pressure of 400 torr to recrystallize the GaN buffer layer , And then grow a 2.5um u-GaN nucleation layer, the raw materials are TMGa and NH 3 ;

[0087] Step 3: Raise the temperature to 1090℃, the pressure is 200torr, grow a low-Si-doped n-GaN layer with a thickness of 100nm, and then grow a high-Si-doped n+GaN layer wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing a high-performance InGaN / AlGaN MQW ultraviolet LED. Blue ammonia, high-purity trimethylindium and high-purity trimethyl gallium serve as an N source, an In source and a Ga source respectively, and SiH4 and Cp2Mg serve as an n type doping agent and a p type doping agent respectively. The method comprises the following steps that firstly, a sapphire substrate or a SiC substrate or a Si substrate is nitrided; secondly, a buffering layer is grown and crystallized, and then a uGaN nucleating layer is grown; thirdly, a low Si-doped n-GaN layer is grown first, and then a high Si-doped n+GaN layer is grown; fourthly, an n-AlGaN layer is grown; fifthly, a Si-doped n+GaN layer is grown, and then an nGaN layer without Si is grown; sixthly, three cycles of InGaN / GaN superlattices without Al are grown, and then eight cycles of Al-doped InGaN / GaN is grown; seventhly, a PAlGaN layer is grown; eighthly, a Mg-doped P+GaN layer is grown; ninthly, a high Mg-doped P++GaN layer is grown. According to the method, InGaN / AlGaN MQW ultraviolet LED epitaxy pieces of the specific structure are grown with an LP MOCVD system, the preparing cost is low, time is saved, the prepared ultraviolet LED is good in performance, and the ultraviolet LED epitaxy industrialization is promoted.

Description

【Technical Field】 [0001] The invention belongs to the technical field of LED chip epitaxial growth, and specifically relates to a method for preparing a high-performance InGaN / AlGaN MQW violet LED. 【Background technique】 [0002] InGaN-based violet and ultraviolet LEDs have a wide range of applications in nitride white LED lighting, using violet and ultraviolet LEDs to excite red, green and blue phosphors. At present, it mainly adopts ELO technology and LEPS technology to prepare, and has successfully developed purple and ultraviolet LEDs. However, these methods are expensive and time-consuming to prepare. The performance of the UV LED prepared by the general method is poor, which limits its application in high-performance detectors and lasers. [Content of the invention] [0003] The technical problem to be solved by the present invention is to provide a method for preparing high-performance InGaN / AlGaN MQW violet LEDs in view of the above-mentioned deficiencies in the prior art,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/0075
Inventor 田进刘波波田伟赵俊李谊
Owner 江苏晶曌半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap