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Trimethylindium low-temperature purification device and low-temperature purification method

A technology of trimethyl indium and a purification method, which is applied in the field of low temperature purification devices of trimethyl indium, can solve the problems that the safety and stability of the purification process are difficult to control, the equipment cost is large, and the equipment requirements are high, and the equipment cost is low. , The effect of low equipment requirements and simple operation

Pending Publication Date: 2019-11-08
苏州普耀光电材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitation of the chemical properties of the product when it encounters air spontaneous combustion, this type of method has high requirements for equipment, high equipment cost investment, complicated operation, and difficult control of the safety and stability of the purification process.

Method used

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  • Trimethylindium low-temperature purification device and low-temperature purification method
  • Trimethylindium low-temperature purification device and low-temperature purification method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The method for the low-temperature purification of trimethylindium comprises the steps:

[0038] (1) Put the purified raw material kettle 1 and the receiving tank 6 in an inert gas glove box, put 500 grams of 99% pure trimethylindium material into the purified raw material kettle 1, and seal the purified raw material kettle 1, Inject liquid nitrogen into the Dewar tank 12;

[0039](2) The cooling medium inlet 81 and the cooling medium outlet 82 of the condensing device 8 are connected to the external cooling equipment, and according to the indication of the thermometer 7 in the receiving tank, the temperature in the receiving tank 6 is controlled at -20 by the condensing device 8 ℃;

[0040] (3) open the vacuum pump 13, vacuumize the purified raw material still 1, and according to the indication of the pressure gauge 3, control the pressure in the purified raw material still 1 to be 30torr;

[0041] (4) The low-temperature heating device carries out low-temperature he...

Embodiment 2

[0043] The method for the low-temperature purification of trimethylindium comprises the steps:

[0044] (1) Place the purified raw material kettle 1 and the receiving tank 6 in an inert gas glove box, put 600 grams of 99% pure trimethylindium material into the purified raw material kettle 1, and seal the purified raw material kettle 1, Inject liquid nitrogen into the Dewar tank 12;

[0045] (2) The cooling medium inlet 81 and the cooling medium outlet 82 of the condensing device 8 are connected to the external cooling equipment, and according to the indication of the thermometer 7 in the receiving tank, the temperature in the receiving tank 6 is controlled at -10 by the condensing device 8 ℃;

[0046] (3) open the vacuum pump 13, vacuumize the purified raw material still 1, and according to the indication of the pressure gauge 3, control the pressure in the purified raw material still 1 to be 40torr;

[0047] (4) The low-temperature heating device carries out low-temperature...

Embodiment 3

[0049] The method for the low-temperature purification of trimethylindium comprises the steps:

[0050] (1) Place the purified raw material kettle 1 and the receiving tank 6 in an inert gas glove box, put 700 grams of solid trimethylindium material with a purity of 99% into the purified raw material kettle 1, and seal the purified raw material kettle 1, Inject liquid nitrogen into the Dewar tank 12;

[0051] (2) The cooling medium inlet 81 and the cooling medium outlet 82 of the condensing device 8 are connected to the external cooling equipment, and according to the indication of the thermometer 7 in the receiving tank, the temperature in the receiving tank 6 is controlled at 10°C by the condensing device 8 ;

[0052] (3) open the vacuum pump 13, vacuumize the purified raw material still 1, and according to the indication of the pressure gauge 3, control the pressure in the purified raw material still 1 to be 45torr;

[0053] (4) The low-temperature heating device carries o...

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Abstract

The invention discloses a trimethylindium low-temperature purifying device, which comprises a purifying raw material kettle, a receiving tank, a vacuum protection device and a vacuum pump, wherein a solid trimethylindium material is arranged in a purifying raw material kettle; a high-purity gas carrier pipe is connected to the purifying raw material kettle; the purifying raw material kettle is connected with a receiving tank through a heat- tracing pipe; the receiving tank is connected with the vacuum protection device; the vacuum protection device is connected with a vacuum pump; and a condensing device is arranged in the receiving tank. The invention also discloses a trimethylindium low-temperature purification method. In the method, the pressure in the purifying raw material kettle is less than 50 Torr, the temperature in the purifying raw material kettle is controlled to be 30-80 DEG C, the temperature in the receiving tank is controlled to be -30 to 30 DEG C, and a high-purity carrier gas drives the trimethylindium material to enter the receiving tank, and after cooling, purified trimethylindium is obtained. The purifying method has low requirements on equipment, low equipmentcost investment and simple operation, improves the purity of the trimethylindium, and greatly improves the safety and stability of the purification process.

Description

technical field [0001] The invention belongs to the technical field of fine chemicals, and in particular relates to a trimethyl indium low-temperature purification device and a low-temperature purification method. Background technique [0002] At present, the methods for growing compound semiconductor materials include metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), chemical beam epitaxy (CBE) and liquid phase epitaxy (LPE). Currently, it is the best method for large-scale production of compound semiconductor thin film materials. The most critical basic material used in the MOCVD epitaxy process is a high-purity metal-organic compound (referred to as MO source) with a purity greater than 99.9999% (>6N). In addition, the MO source is also a supporting material for CBE epitaxy technology. [0003] High-purity MO source is the key raw material of MOCVD technology, and solid-state MO source trimethylindium is the most difficult product to purif...

Claims

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Application Information

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IPC IPC(8): B01D53/00B01D5/00C07F5/00
CPCB01D53/002B01D53/005B01D5/00C07F5/00
Inventor 顾宏伟茅嘉原严金林邓辉
Owner 苏州普耀光电材料有限公司
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