Growth method of GaN nanowire

Abstract

The invention discloses a growth method of a GaN nanowire. The method comprises the following steps: leading trimethylindium to a quartz substrate or a substrate coated with a layer of silica film on the surface in advance, forming a liquid-phase indium drop on the bottom surface of the substrate, and then leading trimethyl gallium and an ammonia gas simultaneously, so as to form an alloy liquid drop; finally, simultaneously leading the trimethyl gallium, the ammonia gas and silicane; growing the GaN nanowire on the alloy liquid drop. By adopting the method, the trimethylindium is adopted as a tin catalyst source, a high-quality GaN nanowire grows on the cheap and available quartz or the substrate coated with the silica film on the surface, the method belongs to in-situ introduction, and is free of fussy processes of transferring and cleaning between different equipments, staining of a product in the transferring process is effectively avoided, a complicated buffer layer design is not needed, and the growth method is simple and convenient, and feasible to operate, and beneficial to industrial production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material growth, and relates to a method for growing GaN nanowires, in particular to a method for growing GaN nanowires on a quartz substrate or a substrate coated with a silicon dioxide film. Background technique [0002] GaN-based semiconductor materials have a wide direct band gap, and are widely used in high-frequency, high-temperature, high-power electronic devices and Optoelectronic devices and other fields have become the third generation of semiconductor materials after the first generation of germanium (Ge), silicon (Si) semiconductor materials and the second generation of gallium arsenide (GaAs), indium phosphide (InP) compound semiconductor materials. [0003] MOCVD (Metal Organic Compound Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) are two main techniques for growing high-quality semiconductor materials, which are unmatched by other techniques. Especially MOCVD t...

AI Technical Summary

Problems solved by technology

For sapphire, its price is more expensive, and it is also difficult to prepare large-sized sapphire substrates

On the other hand, silicon substrates are cheaper and have a mature preparation process, so large-sized silicon substrates can be produced. However, when GaN is grown on a silicon substrate, it is easy to form remelting between Ga and silicon atoms on the surface of the substrate, and the crystal lattice and thermal expansion rate Large mismatch requires complex buffer layer design

For silicon carbide, it is too expensive and not suitable for large-scale applications

Images