Growth method of GaN nanowire

A growth method and nanowire technology, applied in the growth field of GaN nanowires and GaN nanowires, can solve the problems of high price, difficult to prepare large-size sapphire substrates, and not suitable for large-scale applications, and achieve the purpose of avoiding contamination. Effect
CN103757693AInactive Publication Date: 2014-04-30SOUTH CHINA NORMAL UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SOUTH CHINA NORMAL UNIVERSITY
Publication Date
2014-04-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a growth method of a GaN nanowire. The method comprises the following steps: leading trimethylindium to a quartz substrate or a substrate coated with a layer of silica film on the surface in advance, forming a liquid-phase indium drop on the bottom surface of the substrate, and then leading trimethyl gallium and an ammonia gas simultaneously, so as to form an alloy liquid drop; finally, simultaneously leading the trimethyl gallium, the ammonia gas and silicane; growing the GaN nanowire on the alloy liquid drop. By adopting the method, the trimethylindium is adopted as a tin catalyst source, a high-quality GaN nanowire grows on the cheap and available quartz or the substrate coated with the silica film on the surface, the method belongs to in-situ introduction, and is free of fussy processes of transferring and cleaning between different equipments, staining of a product in the transferring process is effectively avoided, a complicated buffer layer design is not needed, and the growth method is simple and convenient, and feasible to operate, and beneficial to industrial production.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor material growth, and relates to a method for growing GaN nanowires, in particular to a method for growing GaN nanowires on a quartz substrate or a substrate coated with a silicon dioxide film. Background technique

[0002] GaN-based semiconductor materials have a wide direct band gap, and are widely used in high-frequency, high-temperature, high-power electronic devices and Optoelectronic devices and other fields have become the third generation of semiconductor materials after the first generation of germanium (Ge), silicon (Si) semiconductor materials and the second generation of gallium arsenide (GaAs), indium phosphide (InP) compound semiconductor materials.

[0003] MOCVD (Metal Organic Compound Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) are two main techniques for growing high-quality semiconductor materials, which are unmatched by other techniques. Especially MOCVD t...

Claims

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