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IGBT (insulated gate bipolar translator) device with high-temperature self-protection function

A self-protection and functional technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as not suitable for parallel use

Inactive Publication Date: 2012-11-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the development process of IGBT, the forward voltage drop of the first PT (punch-through) IGBT has a positive temperature coefficient, and it is not suitable for parallel use.

Method used

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  • IGBT (insulated gate bipolar translator) device with high-temperature self-protection function

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Embodiment Construction

[0020] An IGBT device with high temperature self-protection function, its basic structure is as follows figure 2 , 3 As shown, including metallized collector 1, P-type collector 2, N + buffer layer 3, N - Drift zone 4, P + Body domain 6, P, N + Source region 7, silicon dioxide gate oxide layer 8, polysilicon gate electrode 9, silicon dioxide field oxide layer 10, metallized emitter 11; metallized collector 1 is located on the back of the P-type collector region 2, N + The buffer layer 3 is located on the front of the P-type collector region 2, and the top is the same as the N - Drift zone 4 connected; N + source region 7 and P + The two body regions 6 are located side by side under the metallized emitter 12 and connected to the metallized emitter 12, wherein P + body region 6 below and N - Drift zone 4 is directly connected to the N + Source region 7 is the same as N -The drift region 4 is separated by a P-type base region 5; N - Drift region 4, P-type base region 5...

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Abstract

The invention discloses an IGBT (insulated gate bipolar translator) device with a high-temperature self-protection function, belonging to the technical field of power semiconductor devices. According to the invention, deep-energy-level impurities (12) with an acceptor energy level are introduced in a channel region (A) close to a polysilicon gate electrode (9) in the P-type base region (5) of the traditional IGBT device, and the deep-energy-level impurities (12) have a low ionization rate at a normal temperature, and little influence on the threshold voltage of the device. In the case that the device works under a large current, the temperature of the device rises, the ionization rate of the deep-energy-level impurities (12) is greatly increased, that is, the effective doping level of the P-type base region (5) is increased, so that the threshold voltage of the device is greatly increased, the saturation current value of the IGBT device and the negative temperature coefficient of the forward voltage drop of the device are decreased, and a purposes of further optimizing the negative temperature coefficient of the forward voltage drop of the IGBT device is achieved under the action of the dual mechanisms. The failure of the device due to the too high temperature caused by the own generated heat loss is avoided, so that the device has a high-temperature self-protection function.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a structure of an insulated gate bipolar transistor (IGBT) and a preparation method thereof. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a new type of power semiconductor device. It not only has the advantages of high input impedance, low driving power, simple driving circuit and high switching speed of MOSFET, but also has the advantages of high current density, low saturation voltage and strong current handling ability of bipolar transistor. Therefore, IGBT has high voltage and high current. The three characteristics of high speed are unmatched by other power devices. As a power switching tube or power output tube, IGBT is widely used in induction cooker, UPS uninterruptible power supply, automotive electronic igniter, three-phase motor inverter, welding machine switching power supply and other products, and has become one of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/10
Inventor 李泽宏赵起越夏小军任敏张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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