Silicon heterojunction solar cell with electroplating electrode and manufacturing method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- ENN SOLAR ENERGY
- Publication Date
- 2015-04-22
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the technical field of solar cells, in particular to a silicon heterojunction solar cell with electroplating electrodes and a manufacturing method thereof. Background technique
[0002] In solar cell technology, a silicon heterojunction solar cell is a heterojunction cell composed of a doped amorphous silicon emitter region, an extremely thin amorphous silicon intrinsic layer and a crystalline silicon base region. properties such as temperature coefficient and low attenuation. Carriers generated by the PN junction of silicon heterojunction solar cells under light are transported and collected through the surface transparent conductive film and metal grid lines. Wherein, the greater the aspect ratio of the metal grid lines, the lower the shading area of the silicon heterojunction solar cell, and the higher the efficiency of the silicon heterojunction solar cell. When making metal grid lines, electroplating electrode technolo...