Germanium-silicon heterojunction transistor single event effect test method based on heavy ion microbeam irradiation

Abstract

The present invention provides a germanium-silicon heterojunction transistor single event effect test method based on heavy ion microbeam irradiation. The problems are mainly solved that a damaging mechanism cannot be directly represented and a sensitive region cannot be accurately located in the prior art. The implementation scheme of the method comprises the steps of: selecting a germanium-silicon heterojunction transistor sample to test electrical properties of the germanium-silicon heterojunction transistor sample; making and testing a PCB test board for irradiation, and performing de-encapsulation processing of a germanium-silicon heterojunction transistor device prior to test; assembling an irradiation platform; setting a test condition of a heavy ion microbeam irradiation test; performing beam ejecting position location of a heavy ion microbeam irradiation device; setting the type and the weight of incident heavy ions; developing the heavy ion microbeam irradiation test; and recoding and processing all the test data, and obtaining a single event effect sensitive region. The method provided by the invention can accurately locate the germanium-silicon heterojunction transistorsingle event effect sensitive region, can improve the experiment precision, can reduce the test cost and can be used for assessment of the astronavigation anti-radiation capacity for microelectronicdevices.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a single-event effect test method of a germanium-silicon heterojunction transistor, which can be used for evaluating the anti-radiation capability of spaceflight for microelectronic devices. Background technique [0002] With the rapid development of aerospace technology, the demand for space exploration, search for extraterrestrial energy, and expansion of living space is increasing. Long-term missions such as deep space exploration, space laboratories, and satellite navigation have become the core technologies of the current aerospace field. This puts higher demands on microelectronic devices used in electronic systems for long-term flight. [0003] The working state, reliability and lifespan of an electronic system working in a space environment will be affected by severe high-energy particle radiation and extreme temperature, which may lead to system fail...

AI Technical Summary

Problems solved by technology

However, for a single transistor device, the overall size of the device is on the order of microns, and it is difficult to locate the sensitive area by heavy ion wide beam irradiation

On the other hand, although the irradiation beam spot of the laser microbeam can achieve a focus size of 1-2 μm, the mechanism of the single event effect induced by the laser is different from that of the heavy ion, and the test results cannot accurately characterize the physical mechanism of the single event effect

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