Palladium/titanium dioxide/silicon dioxide/silicon heterojunction-based hydrogen detector

A technology of titanium dioxide and silicon dioxide is applied in the field of hydrogen detectors to achieve the effects of low energy consumption, high sensitivity and simple process

Inactive Publication Date: 2014-02-05
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This results in a flammable and explosive gas (H 2 ) during the storage and transportation of such semiconductor-type sensors will pose a potential hazard

Method used

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  • Palladium/titanium dioxide/silicon dioxide/silicon heterojunction-based hydrogen detector
  • Palladium/titanium dioxide/silicon dioxide/silicon heterojunction-based hydrogen detector
  • Palladium/titanium dioxide/silicon dioxide/silicon heterojunction-based hydrogen detector

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Experimental program
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Embodiment 1

[0028] Titanium dioxide sputtering targets were obtained by cold pressing titanium dioxide powder with a purity (mass fraction) of 99.99%. We selected a monocrystalline silicon wafer with a thickness of 0.5 mm as the substrate, and retained its natural oxide layer. Clean the silicon wafer with ethanol and acetone in ultrasonic wave for 5 minutes, and clean the silicon wafer with deionized water for 1 minute.

[0029] Titanium dioxide film was prepared by radio frequency magnetron sputtering: put the cleaned silicon substrate into the sputtering chamber, and turn on the vacuum system for vacuuming; when the background vacuum was 2×10 -4 When the pressure is Pa, argon / oxygen mixed gas is introduced, the ratio of the two gases is between 2:1 and 1:2, and a pressure of 5 Pa is maintained. After the pressure is stable, start sputtering with a titanium dioxide target, and the RF sputtering power The sputtering time is 90 watts, the sputtering time is 30 seconds, and the sputtering ...

Embodiment 2

[0034] Titanium dioxide sputtering targets were obtained by cold pressing titanium dioxide powder with a purity (mass fraction) of 99.99%. We selected a monocrystalline silicon wafer with a thickness of 0.5 mm as the substrate, and retained its natural oxide layer. Clean the silicon wafer with ethanol and acetone in ultrasonic wave for 5 minutes, and clean the silicon wafer with deionized water for 1 minute.

[0035] Titanium dioxide film was prepared by radio frequency magnetron sputtering: put the cleaned silicon substrate into the sputtering chamber, and turn on the vacuum system for vacuuming; when the background vacuum was 2×10 -4 When the pressure is Pa, argon / oxygen mixed gas is introduced, the ratio of the two gases is between 2:1 and 1:2, and a pressure of 5 Pa is maintained. After the pressure is stable, start sputtering with a titanium dioxide target, and the RF sputtering power The sputtering time is 90 watts, the sputtering time is 60 seconds, and the sputtering ...

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Abstract

The invention specifically provides a high-performance hydrogen detector, which takes a silicon dioxide-covered silicon wafer as a substrate, takes a titanium dioxide semiconductor as a base material, and takes palladium as a catalytic layer. First, a titanium dioxide film is grown on the silicon dioxide-covered silicon substrate by utilizing a radio frequency magnetron sputtering method; and then, a palladium catalytic layer of which the area is smaller than that of the titanium dioxide film is prepared on the film surface by a mask and a direct-current magnetron sputtering method. A palladium/titanium dioxide/silicon dioxide/silicon heterojunction-based hydrogen detector which is disclosed by the invention and utilizes the catalytic effect of the palladium film and the amplification effect of a titanium dioxide/silicon dioxide/silicon heterojunction is simple in process and low in cost, does not need a heater, can work at room temperature, has the characteristics of high sensitivity and short response and recover time, has good detection performance on hydrogen and has an important application prospect.

Description

technical field [0001] The invention belongs to the field of hydrogen detectors, in particular to a hydrogen detector based on palladium / titanium dioxide / silicon dioxide / silicon heterojunction. Background technique [0002] At present, energy shortage and environmental pollution are hot issues of common concern all over the world, and they are also challenging issues facing my country's social and economic development. Hydrogen is closely related to energy, environment and other issues, and the detection of this gas has attracted more and more attention. As an energy gas, hydrogen is regarded as one of the most potential new energy sources due to its high combustion calorific value, cleanness and pollution-free. However, hydrogen is colorless, odorless, flammable and explosive, and the explosion and Fires cause huge economic losses and casualties to our country every year. In order to ensure the safe production, transportation, storage and use of hydrogen energy, it is of g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
Inventor 凌翠翠韩治德杜永刚薛庆忠阎子峰
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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