Self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor and preparation method thereof

Abstract

The invention discloses a self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor which is designed for solving the defects that the existing product base resistance RB is large and the like. The self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor mainly comprises a Si collector region, a local medium region, a base region, a base region low-resistance metal silicide layer, a heavy doping polycrystalline silicon lifting outer base region, an outer base region low-resistance metal silicide layer, a heavy doping polycrystalline silicon emission region, an emission region low-resistance metal silicide layer, an emission region-base region isolation medium region and a heavy doping single-crystal emission region. The base region low-resistance metal silicide layer extends at the outer side of the emission region-base region isolation medium region. The invention discloses a preparation method for the self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor and used for preparing the bipolar transistor. The self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor and the preparation method of the self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor can effectively reduce the base resistance RB, and are simple in process steps and low in cost.

Description

technical field [0001] The invention relates to a germanium-silicon heterojunction bipolar transistor in a self-aligned raised outer base region and a preparation method thereof. Background technique [0002] Planar silicon bipolar transistors are traditional devices for building analog integrated circuits. However, due to the inherent disadvantages of silicon materials in terms of speed, high-frequency and high-speed applications have historically been dominated by III-V compound semiconductor devices such as gallium arsenide. The germanium-silicon heterojunction bipolar transistor obtained by introducing the narrow-bandgap germanium-silicon alloy as the base material into the silicon bipolar transistor has greatly improved the high-frequency performance, while maintaining the advantage of lower cost of silicon-based technology Therefore, it has been widely used in the field of radio frequency, microwave and high-speed semiconductor device base integrated circuits, and has ...

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Problems solved by technology

[0009] The common disadvantage of the above two types of technical solutions is that the process is relatively complicated. The former requires expensive special planarization equipment and processes, and the latter requires a selective epitaxy method that is difficult to control because of its base area that plays a decisive role in device performance. to grow, which may cause related process quality control problems, such as defects such as voids that may appear in the connecting base region grown by selective epitaxy between the base region and the preformed extrinsic base region

Therefore, so far, the device structure and process implementation of the self-aligned raised outer base germanium-silicon heterojunction bipolar transistor still need to be improved.

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