Titanium dioxide nanorod array/silicon heterojunction-based ultraviolet light detector and preparation method thereof

A nanorod array, titanium dioxide technology, applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve problems such as low ability to absorb ultraviolet rays, achieve short recovery time, low energy consumption, and sensitivity high effect

Pending Publication Date: 2016-04-20
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
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Problems solved by technology

In fact, although the titanium dioxide film of conventional size is a semiconductor with a wide band gap, its ability to absorb ultraviolet light is quite low when the material is irradiated by ultraviolet rays, while the titanium dioxide film at the nanoscale is completely different. Exhibits fairly high UV absorption [ShenH, ShanCX, LiBH, XuanB, ShenDZ.ApplPhysLett, 2013, 103:232112]

Method used

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  • Titanium dioxide nanorod array/silicon heterojunction-based ultraviolet light detector and preparation method thereof
  • Titanium dioxide nanorod array/silicon heterojunction-based ultraviolet light detector and preparation method thereof
  • Titanium dioxide nanorod array/silicon heterojunction-based ultraviolet light detector and preparation method thereof

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Embodiment 1

[0025] We selected an n-type monocrystalline silicon wafer with a thickness of 0.5 mm as the substrate, and retained its natural oxide layer. Clean the silicon wafer in ultrasonic wave with deionized water for 15 minutes, then clean the silicon wafer in ultrasonic wave with acetone for 20 hours, and finally clean the silicon wafer with absolute ethanol for 20 minutes. After drying, repeat the above cleaning process again.

[0026]Dry the cleaned n-type silicon substrate and place it in a spin-coating chamber. Spin-coat the titanium dioxide seed layer under the background of continuously flowing nitrogen gas. Put the titanium dioxide nano-film / silicon substrate prepared by the spin coating method into a tubular resistance furnace for annealing in a nitrogen atmosphere at a temperature of 800 degrees Celsius, with a heating rate of 4 degrees Celsius per minute, and keep at 800 degrees Celsius for 2 hours. Put the annealed titanium dioxide nanofilm / silicon substrate into polytet...

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Abstract

The invention in particular provides a high performance ultraviolet light detector made from an n-n homotype heterojunction material and formed by a titanium dioxide nanorod array and an n-type silicon substrate. A preparation method of the ultraviolet light detector comprises the following steps: growing a titanium dioxide nano dot film on the n-type silicon substrate by using a sputtering method; then inducing a seed layer to generate the titanium dioxide nanorod array by a water heating method; finally preparing a light transmitting metal layer electrode film by a magnetron sputtering method. The titanium dioxide nanorod array/silicon heterojunction ultraviolet light detector prepared by using the amplification effect of the titanium dioxide nanorod array/silicon heterojunction has the characteristics of being simple in process, low in cost, heater-free, capable of working under room temperature, low in energy consumption, high in sensitivity and short in response and restoration time, has good detection performance to ultraviolet light, and has important application prospect.

Description

technical field [0001] The invention belongs to the field of ultraviolet light detectors, in particular to an ultraviolet light detector based on titanium dioxide nanorod array / silicon heterojunction and a preparation method thereof. Background technique [0002] Ultraviolet detection technology is one of the research hotspots in the field of photoelectric detection in recent years. It is another emerging detection technology besides laser, infrared and visible light detection. Ultraviolet detection has a wide demand background in the military and civilian fields, and can be applied to many fields such as biological and chemical analysis, industrial detection, astronomical scientific research, transmitter calibration, flame detection, photoelectric countermeasures, and ultraviolet communication [Long Weigang.Quan Research progress of solid-state high-sensitivity ultraviolet detector technology [J]. Semiconductor Optoelectronics, 2014, 35(5).]. It is widely used in military...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/18H01L31/0264B82Y30/00
CPCB82Y30/00H01L31/0264H01L31/109H01L31/1876Y02P70/50
Inventor 凌翠翠韩治德韩雪郭天超
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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