Phosphorus gettering process of silicon chip

A phosphorus gettering and process technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve problems such as affecting the photoelectric conversion efficiency of solar cells, and achieve improved average conversion efficiency, excellent electrical performance parameters, The effect of improving the life expectancy of the minority

Inactive Publication Date: 2011-09-21
无锡尚品太阳能电力科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon wafers are used as the base material to make solar cells. There are micro-defects and metal impurities in monocrystalline silicon. These impurities and defects introduce multiple deep energy levels in the silicon forbidden band and become the recombination center of minority carriers, which seriously affects the photoelectricity of solar cells. conversion efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A total of 300 single-crystal 125×125 silicon wafers with an efficiency level below 15% on the production line were selected for phosphorus gettering treatment. The specific steps are as follows:

[0034] (1) Pre-deposition: Put the prepared textured silicon wafer into a diffusion furnace for diffusion. This process is divided into six steps. The time, temperature and amount of various gases introduced in each step are detailed as follows:

[0035] (a), the diffusion time is 360s, the temperature at the furnace mouth is 875°C, the temperature in the furnace is 825°C, the temperature at the end of the furnace is 825°C, the amount of nitrogen gas is 22500ml, and the amount of phosphorus oxychloride and oxygen is both 0ml;

[0036](b), the diffusion time is 150s, the temperature at the furnace mouth is 885°C, the temperature in the furnace is 845°C, the temperature at the end of the furnace is 865°C, the feed rate of nitrogen is 22500ml, and the feed rates of phosphorus ox...

Embodiment 2

[0061] A total of 300 single-crystal 125×125 silicon wafers with an efficiency level below 15% on the production line were selected for phosphorus gettering treatment. The specific steps are as follows:

[0062] (1) Pre-deposition: Put the prepared textured silicon wafer into a diffusion furnace for diffusion. This process is divided into six steps. The time, temperature and amount of various gases introduced in each step are detailed as follows:

[0063] (a), the diffusion time is 300s, the temperature at the furnace mouth is 870°C, the temperature in the furnace is 820°C, the temperature at the end of the furnace is 823°C, the amount of nitrogen gas is 22100ml, and the amount of phosphorus oxychloride and oxygen is both 0ml;

[0064] (b), the diffusion time is 120s, the temperature at the furnace mouth is 880°C, the temperature in the furnace is 840°C, the temperature at the end of the furnace is 860°C, the feed rate of nitrogen is 22100ml, and the feed rates of phosphorus o...

Embodiment 3

[0089] A total of 300 single-crystal 125×125 silicon wafers with an efficiency level below 15% on the production line were selected for phosphorus gettering treatment. The specific steps are as follows:

[0090] (1) Pre-deposition: Put the prepared textured silicon wafer into a diffusion furnace for diffusion. This process is divided into six steps. The time, temperature and amount of various gases introduced in each step are detailed as follows:

[0091] (a), the diffusion time is 400s, the temperature at the furnace mouth is 880°C, the temperature in the furnace is 830°C, the temperature at the end of the furnace is 830°C, the amount of nitrogen gas is 23000ml, and the amount of phosphorus oxychloride and oxygen is 0ml;

[0092] (b), the diffusion time is 180s, the temperature at the furnace mouth is 890°C, the temperature in the furnace is 850°C, the temperature at the end of the furnace is 870°C, the amount of nitrogen gas is 23000ml, and the amount of phosphorus oxychlori...

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Abstract

The invention relates to a phosphorus gettering process of silicon chips in the manufacture of solar cells, which comprises the following steps: putting sueded silicon chips into a diffusion furnace for pre-deposition, removing a phosphorosilicate glass layer after diffusion, soaking the silicon chips through distributed processing in a hydrofluoric acid solution, and removing oxide layers from the surfaces of the silicon chips; then putting the silicon chips after washing into the diffusion furnace for secondary diffusion processing, taking the silicon chips out from the diffusion furnace after the processing of the secondary diffusion working procedure, cooling the silicon chips to room temperature, and measuring the square resistance of the silicon chips. The invention can effectively decrease heavily doped 'dead layers' and greatly prolong the average minority carrier lifetime of the silicon chips; after the processes including etching, PECVD, silk screen sintering and the like are finished according to the normal process of a cell chip, the average transformation efficiency of the made cell chip is further improved, and the cell chip has better electrical performance parameters.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, in particular to a phosphorus gettering process of a silicon chip in the manufacture of solar cells. Background technique [0002] With the development of industrialization, non-renewable energy sources such as electricity, coal, and oil are frequently running out. Energy issues have increasingly become a bottleneck restricting the development of the international society and economy. More and more countries have begun to implement the "Sunshine Plan" to develop solar energy resources and seek economic development. new impetus. Driven by the huge potential of the international photovoltaic market, the solar cell manufacturing industries of various countries are not only scrambling to invest huge sums of money to expand production, but also to establish their own research and development institutions to research and develop new battery projects to improve product quality and conversion effic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 杜正兴
Owner 无锡尚品太阳能电力科技有限公司
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