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Semiconductor device, method for manufacturing same, and electronic device

A manufacturing method and semiconductor technology, which can be used in the manufacture of semiconductor/solid-state devices, circuits, electrical components, etc., can solve the problems of increased sidewall roughness, affecting the electrical parameters and yield of products, and improve the electrical parameters and good quality. rate effect

Inactive Publication Date: 2019-05-31
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

In the current silicon nitride removal process after semiconductor polysilicon etching, it is found that in the process step of washing phosphoric acid residues with hot water, the polysilicon gate will be corroded, resulting in increased sidewall roughness and reduced polysilicon gate feature size (CD). Small, which seriously affects the electrical parameters and yield of the product

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  • Semiconductor device, method for manufacturing same, and electronic device
  • Semiconductor device, method for manufacturing same, and electronic device
  • Semiconductor device, method for manufacturing same, and electronic device

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Embodiment Construction

[0036] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0037] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numerals designate like elements throughout.

[0038] It will be understood that when an element or layer is referr...

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Abstract

The present invention provides a semiconductor device, a method for manufacturing the same, and an electronic device. The method comprises cleaning a semiconductor wafer in a phosphoric acid tank to remove a silicon nitride hard mask layer; and cleaning the semiconductor wafer in a hot water tank filled with an oxidant to remove phosphoric acid residues on the semiconductor wafer. The manufacturing method can solve the problem that a polycrystalline silicon gate corrodes in a silicon nitride removal process after the polycrystalline silicon etching so as to result in an increase in the sidewall roughness of the polycrystalline silicon gate and a decrease in the characteristic dimension (CD) of the polycrystalline silicon gate, thereby improving the electrical parameters and yield of the products. The semiconductor device and the electronic device have similar advantages.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] In the manufacture of semiconductor devices, polysilicon gate etching is an important step. Generally, silicon nitride is used as a hard mask layer to etch polysilicon to form a gate. After the etching is completed, the silicon nitride hard mask is generally removed by phosphoric acid. , and hot water is also required to remove phosphoric acid residues after removing the silicon nitride hard mask. In the current silicon nitride removal process after semiconductor polysilicon etching, it is found that in the process step of washing phosphoric acid residues with hot water, the polysilicon gate will be corroded, resulting in increased sidewall roughness and reduced polysilicon gate feature size (CD). Small, which seriously affects the electrical parameters ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
Inventor 张启阳詹扬
Owner SEMICON MFG INT (SHANGHAI) CORP
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