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Shallow concentration diffusion process for crystalline silicon solar cell

A technology of solar cells and diffusion processes, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of increasing reverse saturation current, shrinking P-N junction bandwidth, and reducing open circuit voltage, so as to increase the degree of harmony, improve Short-circuit current and efficiency improvement effect

Inactive Publication Date: 2013-06-12
QINGHAI JUNENG POWER
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Problems solved by technology

Excessive dopant concentration will sharply shrink the bandwidth of the P-N junction, resulting in an increase in the reverse saturation current, resulting in a decrease in the open circuit voltage; at the same time, if the surface concentration is too high, a dead layer will be formed on the surface, and a large number of photogenerated carriers will be recombined

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  • Shallow concentration diffusion process for crystalline silicon solar cell
  • Shallow concentration diffusion process for crystalline silicon solar cell

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Embodiment Construction

[0026] A shallow concentration diffusion process for crystalline silicon solar cells, the process comprising the following steps:

[0027] A, adopting the silicon wafer raw material whose conductivity type is P-type, preparing suede, cleaning and drying;

[0028] B. Oxidation: N at a flow rate of 8-10slm at a temperature of 780°C-785°C 2 and O of 3-5slm 2 , and put the cleaned silicon wafer into the diffusion tube for oxidation to obtain a 20-25nm thick oxide layer, that is, SiO 2 ;

[0029] C. Deposition: After the oxidation is completed, continue to feed N with a flow rate of 8-10slm 2 , 1.2-1.5slm O 2 And 0.5-0.6slm carries diffusion source-POCl 3 N 2 The mixed gas is used for P deposition, and the silicon wafer is mixed with O in the atmosphere at a temperature of 780-785°C 2 , POCl 3 A chemical reaction occurs to produce phosphorus, phosphorus pentachloride, phosphorus pentoxide, and chlorine gas. The time is 300-360s. The main reaction equation is as follows:

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Abstract

The invention relates to a shallow concentration diffusion process for a crystalline silicon solar cell. Based on an existing process, improvement is carried out. The shallow concentration diffusion process comprises the three steps of oxidation, sedimentation and constant temperature. A positive-negative (P-N) node of the cell is obtained. During sedimentation and constant temperature advancing processes, diffusion concentration is controlled to be reduced, and a diffusion step is eliminated. Therefore, a dead layer formed after diffusion is eliminated, the integrating degree of the P-N node and a sizing agent is increased, a short-circuit current the solar cell is increased by 0.2-0.25A, and efficiency of a cell piece is increased by more than 3 percent.

Description

Technical field: [0001] The patent of the present invention relates to a diffusion process of conventional crystalline silicon solar cells, in particular to a shallow concentration diffusion process of crystalline silicon solar cells. The patent of the present invention undergoes three steps of one oxidation, one deposition, and one constant temperature to obtain the P-N junction of the battery. In the process of deposition and constant temperature advancement, the diffusion concentration is controlled to reduce, and the diffusion steps are reduced, thereby reducing the dead layer of the junction after diffusion, and increasing the compatibility between the P-N junction and the slurry. Background technique: [0002] At present, the conventional process of crystalline silicon cell manufacturing has entered into standardization, and the process and purpose of each process are as follows: [0003] (1) Surface structure and cleaning: that is, velvet cleaning, which forms a pyram...

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 李宇中
Owner QINGHAI JUNENG POWER
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