Phosphorus gettering process of silicon chip
A phosphorus gettering and process technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems affecting the photoelectric conversion efficiency of solar cells, and achieve the improvement of average conversion efficiency, excellent electrical performance parameters, The effect of improving the life expectancy of the low birth rate
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Embodiment 1
[0033] A total of 300 single-crystal 125×125 silicon wafers with an efficiency level below 15% on the production line were selected for phosphorus gettering treatment. The specific steps are as follows:
[0034] (1) Pre-deposition: Put the prepared textured silicon wafer into a diffusion furnace for diffusion. This process is divided into six steps. The time, temperature and amount of various gases introduced in each step are detailed as follows:
[0035] (a), the diffusion time is 360s, the temperature at the furnace mouth is 875°C, the temperature in the furnace is 825°C, the temperature at the end of the furnace is 825°C, the amount of nitrogen gas is 22500ml, and the amount of phosphorus oxychloride and oxygen is both 0ml;
[0036](b), the diffusion time is 150s, the temperature at the furnace mouth is 885°C, the temperature in the furnace is 845°C, the temperature at the end of the furnace is 865°C, the feed rate of nitrogen is 22500ml, and the feed rates of phosphorus ox...
Embodiment 2
[0061] A total of 300 single-crystal 125×125 silicon wafers with an efficiency level below 15% on the production line were selected for phosphorus gettering treatment. The specific steps are as follows:
[0062] (1) Pre-deposition: Put the prepared textured silicon wafer into a diffusion furnace for diffusion. This process is divided into six steps. The time, temperature and amount of various gases introduced in each step are detailed as follows:
[0063] (a), the diffusion time is 300s, the temperature at the furnace mouth is 870°C, the temperature in the furnace is 820°C, the temperature at the end of the furnace is 823°C, the amount of nitrogen gas is 22100ml, and the amount of phosphorus oxychloride and oxygen is both 0ml;
[0064] (b), the diffusion time is 120s, the temperature at the furnace mouth is 880°C, the temperature in the furnace is 840°C, the temperature at the end of the furnace is 860°C, the feed rate of nitrogen is 22100ml, and the feed rates of phosphorus o...
Embodiment 3
[0089] A total of 300 single-crystal 125×125 silicon wafers with an efficiency level below 15% on the production line were selected for phosphorus gettering treatment. The specific steps are as follows:
[0090] (1) Pre-deposition: Put the prepared textured silicon wafer into a diffusion furnace for diffusion. This process is divided into six steps. The time, temperature and amount of various gases introduced in each step are detailed as follows:
[0091] (a), the diffusion time is 400s, the temperature at the furnace mouth is 880°C, the temperature in the furnace is 830°C, the temperature at the end of the furnace is 830°C, the amount of nitrogen gas is 23000ml, and the amount of phosphorus oxychloride and oxygen is 0ml;
[0092] (b), the diffusion time is 180s, the temperature at the furnace mouth is 890°C, the temperature in the furnace is 850°C, the temperature at the end of the furnace is 870°C, the amount of nitrogen gas is 23000ml, and the amount of phosphorus oxychlori...
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