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Removing method of diffusing dead layers of crystalline silicon solar cell

A technology of solar cells and diffusion dead layers, applied in the field of solar cells, can solve the problems of difficult to guarantee sheet resistance, difficult to guarantee uniformity, difficult to apply on a large scale, etc., and achieves the effects of low cost, simple removal method and reduction of compounding.

Active Publication Date: 2012-08-01
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology uses strong acid solutions called sulfuric or hydrofluoric acids to attack the surfaces on certain types of crystalline silicon wafers (diffusion layers). By doing this process it breaks down any exposed areas inside them without damaging their properties. It also makes these areas more visible during testing with light compared to other methods like chemical vapor deposition techniques. Overall, this new technique enhances both performance and durability of solar cells while reducing costs associated therewith.

Problems solved by technology

Technological Problem addressed in this patents relates to improving the performance and durability of traditional types of crystal silicone solar cells used today (crystals). Specifically, current processes involve either depositing layers onto the back side of the substrate with high cost or requiring multiple steps such as etchings and polishing. Additionally, these techniques may result in uneven distribution over space between different areas within each area where some parts can receive more radiation compared to others. To address these issues, new technologies like ion implants were developed but they still require expensive equipment and complex procedures.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Taking the preparation of an existing conventional battery as an example, the steps are as follows:

[0021] (1) P-type silicon wafer to remove damaged layer, texture,

[0022] (2) Emitter prepared by diffusing phosphorus on one or both sides;

[0023] (3) Put the diffused silicon chip into 3~5vol% HF for 200s after cutting the edge or removing the back electrode, so as to remove the phosphosilicate glass on the surface;

[0024] (4) screen-print a layer of corrosive slurry on the diffusion surface of the silicon wafer from which phosphosilicate glass has been removed, with a wet weight of about 1.2 g, and then dry; the corrosive slurry includes the following components: by mass, 50% quaternary ammonia alkali, 40% terpineol, 10% ethyl cellulose; the viscosity of the corrosive slurry is 200 Pa s to meet the needs of screen printing;

[0025] (5) Put the dried silicon wafer into a mixed solution of HF and HCl with a volume ratio of 2:1 for cleaning for 480s;

[0026] (...

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Abstract

The invention discloses a removing method of diffusing dead layers of a crystalline silicon solar cell, which comprises the following steps of screen coating a layer of corrosive slurry on a surface of a silicon slice after diffusion in a screen printing mode and drying the slurry; and removing the corrosive slurry. The corrosive slurry comprises the following components: by mass, 10-50% of quaternary ammonium hydroxide, 10-40% of terpinol and 10-50% of ethyl cellulose. The viscosity of the corrosive slurry ranges from 100 Pa s to 300 Pa s. According to the removing method of diffusing dead layers of the crystalline silicon solar cell, the surface of the silicon slice after diffusion which is performed a phosphorosilicate glass removing process is corroded, a layer of silicon face is etched off, a diffusing dead layer is removed, reduce recombination of surface high concentration diffusion layers is reduced, and short wave response is improved. Tests show that if the method is used, short-circuit current of the solar cell can be improved by 30-60 mA, and photoelectric efficiency of the cell can be improved by 0.1% to 0.2%.

Description

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Claims

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Application Information

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Owner CSI CELLS CO LTD
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