Diffusion low surface concentration efficiency enhancing technology

A low-surface, high-concentration technology, applied in sustainable manufacturing/processing, photovoltaic power generation, electrical components, etc., can solve the problems of silicon wafers prone to high temperature, accelerated carrier recombination, electrical loss, etc., to reduce surface recombination, The effect of shortening the oxidation time and reducing the obstruction

Inactive Publication Date: 2017-08-22
TONGWEI SOLAR HEFEI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] There are defects in the diffusion process in the workshop, resulting in slightly deeper junction depth and thicker dead layer, resulting in accelerated carrier recombination and electrical loss; moreover, the temperature of the diffusion process is relatively high, and silicon wafers are prone to thermal defects caused by high temperature; in order to improve Conversion efficiency, need to optimize the current production process

Method used

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  • Diffusion low surface concentration efficiency enhancing technology
  • Diffusion low surface concentration efficiency enhancing technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Step 1) Loading and feeding: put the cleaned and dried silicon wafers into the quartz boat, and slowly send the quartz boat full of silicon wafers into the diffusion furnace. The time for feeding the wafers is 600s. Access to N 2 The flow is 10000sccm, N 2 -POCl 3 and O 2 is 0 sccm;

[0026] Step 2) heating up: heating the quartz boat, the heating time is 400s, the temperature is raised to 785°C, N 2 The flow rate is adjusted to 8000sccm, N 2 -POCl 3 and O 2 is 0 sccm;

[0027] Step 3) preoxidation: the O that feeds flow is 2000sccm 2 Perform pre-oxidation, the time is 200s, the temperature is 785°C, N 2 The flow rate is 8000sccm, N 2 -POCl 3 The flow rate is 0sccm;

[0028] Step 4) Diffusion for the first time: the temperature in the furnace is raised to 810°C, O 2 The flow rate is adjusted to 600sccm, and N 2 -POCl 3 And the flow rate is 1200sccm, N 2 The flow rate is 10000sccm, and the diffusion time is 600s;

[0029] Step 5) Advance for the first ti...

Embodiment 2

[0035] Step 1) is the same as embodiment 1;

[0036] Step 2) heating up: heating the quartz boat, the heating time is 400s, the temperature is raised to 775°C, N 2 The flow rate is adjusted to 8000sccm, N 2 -POCl 3 and O 2 is 0 sccm;

[0037] Step 3) preoxidation: the O that feeds flow is 1900sccm 2 Perform pre-oxidation, the time is 180s, the temperature is 775°C, N 2 The flow rate is 8000sccm, N 2 -POCl 3 The flow rate is 0sccm;

[0038] Step 4) Diffusion for the first time: the temperature in the furnace is raised to 805°C, O 2 The flow rate is adjusted to 500sccm, and N 2 -POCl 3 And the flow rate is 1150sccm, N 2 The flow rate is 10000sccm, and the diffusion time is 580s;

[0039] Step 5) Advance for the first time: make the phosphorus on the surface advance into the silicon wafer body, stop feeding O 2 with N 2 -POCl 3 , the furnace temperature is 805°C, N 2 Flow rate is 10000sccm, advance 280s;

[0040] Step 6) The second diffusion: the temperature in t...

Embodiment 3

[0045] Step 1) is the same as embodiment 1;

[0046] Step 2) heating up: heating the quartz boat, the heating time is 400s, the temperature is raised to 795°C, N 2 The flow rate is adjusted to 8000sccm, N 2 -POCl 3 and O 2 is 0 sccm;

[0047] Step 3) preoxidation: the O that feeds flow is 2100sccm 2 Carry out pre-oxidation, the time is 220s, the temperature is 795°C, N 2 The flow rate is 8000sccm, N 2 -POCl 3 The flow rate is 0sccm;

[0048] Step 4) Diffusion for the first time: the temperature in the furnace is raised to 815°C, O 2 The flow rate is adjusted to 700sccm, and the N 2 -POCl 3 And the flow rate is 1250sccm, N 2 The flow rate is 10000sccm, and the diffusion time is 620s;

[0049] Step 5) The first advance: make the phosphorus on the surface advance into the silicon wafer body, stop feeding O 2 with N 2 -POCl 3 , the furnace temperature is 815°C, N 2 Flow rate is 10000sccm, advance 320s;

[0050] Step 6) The second diffusion: the temperature in the ...

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Abstract

The invention relates to the technical field of solar cell panel manufacturing, and particularly relates to a diffusion low surface concentration efficiency enhancing technology comprising the following steps of step 1) chip loading and chip conveying; step 2) temperature rising; step 3) pre-oxidation; step 4) the first time of diffusion; step 5) the first time of propulsion; step 6) the second time of diffusion; step 7) the second time of propulsion; step 8) cooling; and step 9) boat unloading. Pre-oxygen is increased and pre-oxidation is enhanced so that the passivation effect before diffusion can be enhanced; diffusion is optimized and step time and temperature are promoted, and the principle of low temperature and slow promotion is adopted so that the thermal damage caused by high temperature can be reduced; the diffusion N2-POCl3 flow is adjusted, the silicon chip surface phosphorous concentration is reduced, forbidden band contraction of the heavy doping effect is reduced, the dead layer is reduced and surface recombination is reduced; meanwhile, the diffusion step O2 flow is changed, the obstruction of the diffusion step O2 on phosphorous diffusion is reduced, the square resistance uniformity is enhanced and the conversion efficiency is enhanced.

Description

technical field [0001] The invention relates to the technical field of solar cell panel manufacturing, in particular to a diffusion low surface concentration efficiency improvement process. Background technique [0002] There are defects in the diffusion process in the workshop, resulting in slightly deeper junction depth and thicker dead layer, resulting in accelerated carrier recombination and electrical loss; moreover, the temperature of the diffusion process is relatively high, and silicon wafers are prone to thermal defects caused by high temperature; in order to improve Conversion efficiency requires optimization of the current production process. Contents of the invention [0003] The purpose of the present invention is to provide a diffusion low surface concentration efficiency-enhancing process to solve the problems raised in the above-mentioned background technology. The diffusion low surface concentration efficiency-enhancing process has the characteristics of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02365H01L31/1876Y02E10/50Y02P70/50
Inventor 沈亚光李强强魏飞
Owner TONGWEI SOLAR HEFEI
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