Solar cell homogenizing annealing process
A solar cell and diffusion annealing technology, applied in the field of solar cell technology, can solve the problems of reducing the short-wave effect of the battery, low conversion efficiency of the battery, and high phosphorus concentration on the surface of the silicon wafer, so as to improve the conversion efficiency of the battery, increase Uoc, and reduce thermal damage Effect
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Embodiment 1
[0019] 1) Put the textured silicon wafer into the diffusion furnace tube, raise the temperature to 750°C, the heating time is 600s, and at the same time, 10000 sccm of oxygen is introduced;
[0020] 2) Keep the temperature at 750°C constant for 600s, and at the same time inject 5000sccm of nitrogen;
[0021] 3) Pre-oxidation, the time is 120s, the amount of oxygen introduced is 200sccm, and the amount of nitrogen is 5000sccm;
[0022] 4) Constant temperature pre-deposition, the temperature is 750°C, 5000sccm of nitrogen gas is introduced, 800sccm of nitrogen gas is carried, 200sccm of oxygen gas is carried out, and the time is 720s;
[0023] 5) Main diffusion, variable temperature propulsion, temperature rises from 750°C to 810°C at a certain heating rate, nitrogen 5000sccm, oxygen 2000sccm, time 360s;
[0024] 6) Cool down, the amount of nitrogen gas introduced is 15000sccm, so that the temperature in the furnace drops to 750°C at a certain cooling rate, and the time is 720s...
Embodiment 2
[0028] 1) Put the textured silicon wafer into the diffusion furnace tube, raise the temperature to 810°C, the heating time is 700s, and at the same time, 15000 sccm of oxygen is introduced;
[0029] 2) Keep the temperature at 810°C constant for 1200s, and at the same time inject 10000sccm of nitrogen;
[0030] 3) Pre-oxidation, the time is 500s, the amount of oxygen introduced is 600sccm, and the amount of nitrogen is 10000sccm;
[0031] 4) Constant temperature pre-deposition, the temperature is 810°C, the nitrogen gas is 10000 sccm, the source nitrogen gas is 1400 sccm, the oxygen gas is 600 sccm, and the time is 1200s;
[0032] 5) Main diffusion, variable temperature propulsion, temperature rises from 810°C to 870°C at a certain heating rate, nitrogen 10000sccm, oxygen 2900sccm, time 600s;
[0033] 6) Cool down, the amount of nitrogen gas introduced is 25000sccm, so that the temperature in the furnace drops to 810°C at a certain cooling rate, and the time is 1200s;
[0034...
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