Diffusion post treatment technique of crystalline silicon solar cell

Abstract

The invention discloses a diffusion post treatment technique of a crystalline silicon solar cell. After furnace tube diffusion, oxidation treatment is conducted on a silicon wafer through light rapid heat treatment, and a layer of oxidation film is formed on the surface of the silicon wafer. According to the diffusion post treatment technique of the crystalline silicon solar cell, diffused peroxidation is adopted, a serious dead layer can be changed into an oxide layer, and in the process of subsequent wet chemical cleaning, the oxide layer can be corroded and stripped by HF, so that partial diffusion dead layer is effectively removed, and recombination of minority carriers on the surface of the cell can be reduced; meanwhile, by means of the peroxidation treatment after the furnace tube diffusion, the concentration distribution of phosphorus or boron which is locally uneven in the microscopic scale can be improved, the uniformity of p-n knots is improved, and the cell efficiency is improved. According to the diffusion post treatment technique of the crystalline silicon solar cell, low temperature quick oxidation is adopted, an oxidation layer can be formed in a very short period, the defect does not occur in the silicon wafer, and the phosphor doping curve can not be affected obviously.

Description

technical field [0001] The invention relates to a post-diffusion treatment process for crystalline silicon solar cells. Background technique [0002] In the production process of crystalline silicon solar cells, diffusion is the core process. At present, the diffusion process in conventional production is to deposit phosphorus atoms (or boron atoms) on the surface of the silicon wafer through the volatilization of the liquid phosphorus source (or boron source) in a tubular diffusion furnace, and then diffuse into the silicon wafer. Into a p-n junction. During the diffusion process of the furnace tube, a heavily doped layer containing a high concentration of phosphorus (or boron) atoms will inevitably appear on the surface of the silicon wafer, in which a large number of phosphorus (or boron) atoms are in the gap state, forming a high-density Defects, which are strong recombination centers for minority carriers, greatly affect carrier collection, are called diffusion dead l...

AI Technical Summary

Problems solved by technology

The diffusion dead layer greatly affects the collection of carriers, thereby reducing the open