Solar battery with structure of oxide-metal multilayer film/silicon substrate

A technology for solar cells and oxide films, applied in the field of solar cells, can solve the problems of expensive equipment, high-risk chemicals in raw materials, etc., and achieve the effects of fewer manufacturing processes, reduction of Auger recombination and dead layers, and low cost

Active Publication Date: 2015-09-16
江苏润阳悦达光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, HIT solar cells currently have the following problems: 1. The equipment is expensive, and the raw materials are high-risk chemicals
[0004] However, at present, the transparent cond

Method used

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  • Solar battery with structure of oxide-metal multilayer film/silicon substrate
  • Solar battery with structure of oxide-metal multilayer film/silicon substrate
  • Solar battery with structure of oxide-metal multilayer film/silicon substrate

Examples

Experimental program
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Embodiment 1

[0038] Such as figure 1As shown in , the structure provided in this embodiment is an oxide-metal multilayer film / silicon-based solar cell, and the structure of the solar cell includes from top to bottom: silver electrode 1, oxide-metal multilayer film 2, passivation layer 3, a silicon substrate 4 and an all-aluminum back electrode 5, the oxide-metal multilayer film 2 is composed of a first oxide film 21, a metal film 22 and a second oxide film 23, wherein the first oxide film 21 and the second oxide film 23 is MoO 3 film, the metal film 22 is an Ag film, and the passivation layer 3 is SiO 2 passivation layer.

[0039] Wherein the thickness of the first oxide film is 10-20 nm, the thickness of the metal film is 2-15 nm, and the thickness of the second oxide film is 30-50 nm.

[0040] The above structure is an oxide-metal multilayer film / silicon-based solar cell, which is prepared by the following method:

[0041] (1) Clean the n-type or p-type single crystal silicon wafer w...

Embodiment 2

[0048] The structure provided in this embodiment is an oxide-metal multilayer film / silicon-based solar cell. The difference from Embodiment 1 is that the passivation layer 3 is Al 2 o 3 passivation layer.

[0049] The above structure is an oxide-metal multilayer film / silicon-based solar cell, which is prepared by the following method:

[0050] (1) Clean the n-type or p-type single crystal silicon wafer with the RCA process, and then use atomic layer deposition (ALD) technology to deposit a layer of Al on the surface of the silicon wafer 2 o 3 Passivation layer, set the deposition temperature to 200°C, Al(TMA), N 2 、H 2 The pulse time of O is: 0.1s, 10s and 0.1s respectively, the flow rate is respectively: 150sccm, 150sccm and 200sccm, and 10-30 cycles are performed to deposit 1-3nm aluminum oxide on the surface of the silicon wafer;

[0051] (2) Then MoO is prepared on the surface of the passivation layer by a resistive thermal evaporation coating machine 3 Thin film, va...

Embodiment 3

[0056] The structure provided in this embodiment is an oxide-metal multilayer film / silicon-based solar cell. The difference from Embodiment 1 is that the passivation layer 3 is TiO 2 passivation layer.

[0057] The above structure is an oxide-metal multilayer film / silicon-based solar cell, which is prepared by the following method:

[0058] (1) Clean the n-type or p-type single crystal silicon wafer with the RCA process, and then use atomic layer deposition (ALD) technology to deposit a layer of TiO on the surface of the silicon wafer 2 Passivation layer, set the deposition temperature to 200-300°C, TiCl 4 , N 2 、H 2 The pulse time of O is: 1s, 3s and 1s respectively, the flow rate is respectively: 150sccm, 150sccm and 200sccm, carry out 10-30 cycles, and deposit 1-3nm titanium dioxide on the surface of the silicon wafer;

[0059] (2) Then MoO is prepared on the surface of the passivation layer by a resistive thermal evaporation coating machine 3 Thin film, vacuum degree ...

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Abstract

The invention discloses a solar battery with a structure of an oxide-metal multilayer film/a silicon substrate. The solar battery structure, from the top to the bottom, successively comprises: a silver electrode, an oxide-metal multilayer film, a passivation layer, a silicon substrate and a full aluminum back electrode. The oxide-metal multilayer film is obtained through compositing a first oxide film, a metal film and a second oxide film. The first oxide film or the second oxide film is a MoO3 film, a tin-doped In2O3 film, a fluorine-doped SnO2 film or an aluminum-doped ZnO film. The metal film is an Ag film, an Au film or an Al film. The solar battery can prevent the tradition thermal diffusion or can prevent the auger recombination and the dead layer phenomenon which are caused by the preparation emission electrode of the ion injection method. Furthermore, the invention also discloses a method for the solar battery with a structure of an oxide-metal multilayer film/a silicon base, which is less in the preparation procedures, applicable to the batch production and high temperature free during the whole preparation process.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to an oxide-metal multilayer film structure / silicon-based solar cell and a preparation method thereof. Background technique [0002] The most common structure of solar cells is the p-n junction structure of inorganic material system, which can be divided into homojunction and heterojunction according to the similarities and differences of materials. Heterojunction (Heterojunction, HJ) refers to a p-n junction composed of two different semiconductor materials. The concept of heterojunction was proposed by Gubanov et al. in 1951. Heterojunction solar cells can avoid the high-temperature diffusion process, and form p-n junctions with silicon substrates by evaporating thin films at low temperatures. At present, silicon-based heterojunction solar cells mainly include a-Si:H / c-Si heterojunction solar cells (Heterojunction with intrinsic Thinlayer, HIT), AZO / Si heterojunct...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0224H01L31/18
CPCH01L31/02167H01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 沈辉吴伟梁包杰
Owner 江苏润阳悦达光伏科技有限公司
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