Passivation method for shunt bug of non-crystal silicon film light voltage module

Abstract

The present invention provides a method for restraining shunt defects of a p-i-n type large area photovoltaic module based on a hydrogenated amorphous silicon film, and the module comprises a comparatively thin i layer. An amorphous silicon alloy based film having wide band gap and high resistance is arranged between an active photovoltaic layer and a conductive back electrode to perform a barrier function upon the leakage of current. Shunt barrier material with strong light transmittance is a virtual film or is called a 'dead layer', which does not participate to photoelectrical power conversion directly. Shunt passivation films, like amorphous silicon devices which can be massively produced, are capable of realizing simple and quick production in plasma reinforcing chemical vapor deposition devices. The method especially contributes to enhancing the performance, product rate and reliability of perspective type or partial transparent film silicon photovoltaic modules applied to the application of building integrated photovoltaic.

Description

technical field [0001] The invention belongs to the field of photoelectric equipment, in particular to the technology of amorphous silicon thin-film solar cells. Background technique [0002] Photovoltaic (PV) systems are rapidly expanding their market in energy and industrial technology development due to the increasing demand for clean, safe, sustainable and reliable energy. Hydrogenated amorphous silicon (a-Si) thin films, and related amorphous silicon alloys with various light energy band gaps, are suitable for making various light-absorbing materials with different predetermined thicknesses, and have become a relatively mature material for commercial production of photovoltaic modules. branch. Thin-film silicon photoelectric technology has low material cost, large coverage area, and good benefits, especially it is easy to combine with building materials such as windows, roofs, and walls. Due to its relatively wide optical bandgap, amorphous silicon is particularly sui...

AI Technical Summary

Problems solved by technology

This destructive method has the following disadvantages: laser scribing is slow and expensive; the format does not appear to be uniform; the transparency gradually increases with the reduction of the optoelectronic active area (loss of module function)

However, in practice, this method of overcoming shunting is not feasible for the following two reasons: First, because amorphous silicon alloys with wide band gaps such as amorphous silicon carbon are very poorly stable, it will degrade the efficiency of solar cells. Decays rapidly in light

The second is that the low electronic performance of the i-layer of the wide bandgap amorphous silicon alloy will seriously affect the output power of photovoltaic devices.

And doped amorphous silicon carbon or other alloys are not suitable for separate shunt suppression layer

Therefore, if figure 1 The shown method of adding a shunt suppression layer 70 on the standard i-layer 50 cannot effectively or permanently solve the shunt problem caused by the thin-film amorphous silicon i-layer 50

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