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Method for adjusting sensitivity of FET (Field Effect Transistor) biosensor

A biosensor, sensitivity technology, applied in the field of biosensors, can solve problems such as reducing the performance of FET biosensors

Pending Publication Date: 2022-06-21
CHINA UNIV OF GEOSCIENCES (WUHAN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Debye length greatly limits the application of FET biosensors in the physiological environment of high salt and high ionic strength, and seriously reduces the performance of FET biosensors.

Method used

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  • Method for adjusting sensitivity of FET (Field Effect Transistor) biosensor
  • Method for adjusting sensitivity of FET (Field Effect Transistor) biosensor
  • Method for adjusting sensitivity of FET (Field Effect Transistor) biosensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The purpose of this example is to study the effect of different passivation layer thicknesses and ionic strengths on the sensitivity of FET biosensors based on serotonin nucleic acid aptamers. The specific methods are as follows:

[0031] S1, calculate the range value of the passivation layer thickness of the biosensor to be prepared according to the existing data records and the dielectric constant formula of the passivation layer, and the specific calculation process is as follows:

[0032] According to the information, the electrostatic force constant K is 8.98×10 9 Nm 2 / C 2 , the vacuum permittivity ε 0 8.85×10 -12 F / m, Boltzmann constant K B is 1.38×10 -23 J / K, temperature (Kelvin) T is 293.16K, Avogadro's number Na is 6.02×10 23 , the basic charge e is 1.60 × 10 -19 C;

[0033] The test results: the capacitance C / S per unit area of ​​the passivation layer is 58.3pF / mm 2 ;

[0034] Substitute the above data into the dielectric constant In the formula, ...

Embodiment 2

[0046] The purpose of this example is to study the effect of different passivation layer thicknesses and ionic strengths on the sensitivity of FET biosensors based on dopamine aptamers. The specific methods are as follows:

[0047] According to the information, the electrostatic force constant K is 8.98×10 9 Nm 2 / C 2 ;

[0048] The test results: the capacitance C / S per unit area is 58.3pF / mm 2 ,

[0049] Substitute the above data into the dielectric constant formula Among them, the thickness range of the obtained passivation layer is between 1.0 and 9.3 μm.

[0050] S2, calculate the ionic strength range value of the target to be tested according to the existing data records and the Debye length formula. The specific calculation process is as follows:

[0051] Check the information to get: vacuum dielectric constant ε 0 8.85×10 -12 F / m, Boltzmann constant K B is 1.38×10 - 23 J / K, temperature (Kelvin) T is 293.16K, Avogadro's number Na is 6.02×10 23 , the basic ch...

Embodiment 3

[0058] The purpose of this example is to study the effect of different passivation layer thicknesses and ionic strengths on the sensitivity of FET biosensors based on glucose nucleic acid aptamers. The specific methods are as follows:

[0059] S1, calculate the range value of the passivation layer thickness of the biosensor to be prepared according to the existing data records and the dielectric constant formula of the passivation layer, and the specific calculation process is as follows:

[0060] According to the information, the electrostatic force constant K is 8.98×10 9 Nm 2 / C 2 ;

[0061] The test results: the capacitance C / S per unit area is 58.3pF / mm 2 ,

[0062] Substitute the above data into the dielectric constant formula Among them, the thickness range of the obtained passivation layer is between 1.0 and 9.3 μm.

[0063] S2, calculate the ionic strength range value of the target to be tested according to the existing data records and the Debye length formula...

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Abstract

The invention relates to the technical field of biosensors, in particular to a method for adjusting the sensitivity of an FET biosensor. The method is specifically realized by adjusting the Debye length to enable the Debye length to be matched with the height of the nucleic acid aptamer. The inventor further deduces through a dielectric constant formula and a Debye length formula that the thickness of the passivation layer and / or the ionic strength of the solution during detection can be changed, so that the adjustment of the Debye length can be realized; finally, the conclusion is verified through a series of specific experimental cases and theoretical calculation of the influence of the effective charge quantity brought by the conformation change of the nucleic acid aptamer near the Debye length on the sensitivity of the nucleic acid aptamer-FET biosensor. The adjusting method provided by the invention is simple to operate and easy to implement.

Description

technical field [0001] The invention relates to the technical field of biosensors, in particular to a method for adjusting the sensitivity of a FET biosensor. Background technique [0002] Field-effect transistor (FET)-based biosensors have attracted great attention in the past few years due to their enormous role in drug discovery, disease diagnosis, and environmental monitoring. FET biosensors have the advantages of small size, high sensitivity at ultra-low concentrations, high mechanical strength, and good solution stability, and play a crucial role in POCT systems. The channel of the FET is functionalized with a probe with target recognition. The binding process of the probe and the target changes the surface potential of the channel and controls the number of carriers in the channel to open the channel. This change related to transconductance It can significantly amplify the signal detected by the target. The FET has a similar function as an ordinary electronic amplify...

Claims

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Application Information

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IPC IPC(8): G01N27/414
CPCG01N27/4145
Inventor 娄筱叮夏帆张红园郑志
Owner CHINA UNIV OF GEOSCIENCES (WUHAN)
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