Plasma confinement apparatus and semiconductor processing equipment applying the same

A plasma and confinement device technology, applied in the field of microelectronics, can solve problems such as complicated installation and maintenance, complicated installation and positioning, and complicated mechanical connection, and achieve the effects of convenient installation and maintenance, prolonging service life, and avoiding particle pollution

Active Publication Date: 2009-05-27
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

Therefore, the installation and positioning of the plasma confinement ring set provided by the prior art is relatively complicated, and the mechanical connection betwee

Method used

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  • Plasma confinement apparatus and semiconductor processing equipment applying the same
  • Plasma confinement apparatus and semiconductor processing equipment applying the same
  • Plasma confinement apparatus and semiconductor processing equipment applying the same

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Embodiment Construction

[0044] The technical core of the plasma confinement device provided by the present invention and the semiconductor processing equipment using the plasma confinement device is to set at least one layer of cylindrical plasma confinement cover, and open a through hole on it to form a hole that penetrates the confinement device. The walls confine the channel so that the plasma cannot diffuse beyond the confines of the plasma confinement enclosure. The confinement shield mentioned in the present invention refers to each layer of cylindrical structure surrounding the reaction area to restrict the outward movement (eg, diffusion movement) of the plasma in the area. In the present invention, a single-layer confinement cover can be used to form the plasma confinement device for restricting the outward movement of plasma alone, or multiple layers of confinement cover can be combined to form the plasma confinement device.

[0045] In order to enable those skilled in the art to better und...

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Abstract

The invention provides a plasma constraint device for limiting plasma diffusion. The constraint device comprises at least one layer of cylindrical constraint cover, wherein each layer of the constraint cover is provided with a through hole so as to form a constraint passage. The invention also provides semiconductor processing equipment applying to the plasma constraint device, which comprises a reaction cavity, an upper electrode, a lower electrode and the plasma constraint device, wherein the constraint device is positioned in the reaction cavity and encircles the reaction zone between the upper electrode and the lower electrode so as to prevent the plasma from diffusing outside the constraint device. The plasma constraint device and the semiconductor processing equipment are convenient for mounting and maintenance and uneasy to destroy. Meanwhile, the plasma constraint device and the semiconductor processing equipment can reduce and even avoid particle pollution caused by the plasma outside the reaction zone, so as to increase product yield and prolong service life of parts in the reaction cavity.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, in particular, to a plasma confinement device used in semiconductor processing / processing technology and semiconductor processing equipment using the confinement device. Background technique [0002] With the rapid development of electronic technology, people's requirements for the integration of integrated circuits are getting higher and higher, which prompts companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. In the processing / processing of semiconductor devices, semiconductor processing / processing equipment such as plasma processing apparatuses are widely used. [0003] Currently, existing plasma processing devices generally include various parts such as a reaction chamber, an upper / lower electrode, a gas input part, and a vacuum obtaining part. In the actual process, the working process of the pl...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/02H01L21/205H01L21/3065H01L21/67H01J37/32H05H1/00C23C16/513C23F4/00
CPCH01J37/32623H01J37/32633H01J37/32642
Inventor 南建辉宋巧丽李东三
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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