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Magnetoresistive element and magnetic memory

一种磁阻元件、元件的技术，应用在静态存储器、数字存储器信息、磁场控制的电阻器等方向，能够解决难以供给磁场等问题

Active Publication Date: 2008-04-16
KIOXIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore it is difficult to supply a sufficient magnetic field induced by the current

Method used

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  • Magnetoresistive element and magnetic memory
  • Magnetoresistive element and magnetic memory
  • Magnetoresistive element and magnetic memory

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0058] figure 1 is a sectional view showing the structure of the MTJ element 10 according to the first embodiment. figure 1 The arrows in indicate the direction of magnetization. In this embodiment, an MTJ element 10 having a single pinned layer structure (ie, a structure in which a free layer and a pinned layer are arranged on both sides of a nonmagnetic layer) will be described.

[0059] The MTJ element 10 has a crystal orientation lower layer 15, a pinned layer (also called a magnetization pinned layer or pinned layer) 11, a tunnel barrier layer (nonmagnetic layer) 13, a recording layer (also called a magnetization free layer or A layered structure formed by a free layer) 12 and a capping layer 14. The layered structure may have a reverse stacking order. Lower electrode 16 is provided on the lower surface of crystal orientation lower layer 15 . The upper electrode 17 is provided on the upper surface of the cap layer 14 .

[0060] The pinned layer 11 has a fixed magneti...

no. 2 example

[0116] In the second embodiment, a magnetic layer for controlling the crystallinity of the tunnel barrier layer 13 is inserted between the tunnel barrier layer 13 and the pinned layer 11 , thereby increasing the crystallinity of the tunnel barrier layer 13 and the recording layer 12 .

[0117] Figure 4 is a sectional view showing the structure of the MTJ element 10 according to the second embodiment. In this embodiment, an MTJ element 10 having a single pinned layer structure will be explained.

[0118] The MTJ element 10 has a layered structure formed by sequentially stacking a crystal orientation lower layer 15 , a pinned layer 11A, an interface pinned layer 11B, a tunnel barrier layer 13 , a recording layer 12 , and a cap layer 14 . Layered structures may have a reverse stacking order. Lower electrode 16 is provided on the lower surface of crystal orientation lower layer 15 . The upper electrode 17 is provided on the upper surface of the cap layer 14 .

[0119] The fix...

no. 3 example

[0122] In the third embodiment, a magnetic layer for enhancing the magnetoresistance effect is inserted between the recording layer 12 and the tunnel barrier layer 13, thereby improving the characteristics of the MTJ element 10.

[0123] Figure 5 is a sectional view showing the structure of the MTJ element 10 according to the third embodiment. In this embodiment, an MTJ element 10 having a single pinned layer structure will be explained.

[0124] The MTJ element 10 has a layered structure formed by sequentially stacking a crystal orientation lower layer 15 , a fixed layer 11 , a tunnel barrier layer 13 , an interface recording layer 12B, a recording layer 12A, and a capping layer 14 . Layered structures may have a reverse stacking order. Lower electrode 16 is provided on the lower surface of crystal orientation lower layer 15 . The upper electrode 17 is provided on the upper surface of the cap layer 14 .

[0125] The recording layer 12 of this embodiment is formed by lami...

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Abstract

A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.

Description

technical field [0001] The present invention relates to a magnetoresistive element and a magnetic memory, for example, to a magnetoresistive element and a magnetic memory that can record information by, for example, supplying an electric current. Background technique [0002] MRAM (Magnetic Random Access Memory; hereinafter also referred to as magnetic memory) using a ferromagnetic material is expected to be a nonvolatile memory that guarantees nonvolatility, high-speed operation, large capacity, and low power consumption. The MRAM has an MTJ (Magnetic Tunnel Junction) element using a TMR (Tunneling Magneto Resistance) effect as a memory element, and stores information according to the magnetization state of the MTJ element. [0003] In a conventional MRAM in which data is written based on a magnetic field induced by a current, the value of the current flowing to the interconnect decreases with microfabrication. It is therefore difficult to supply a sufficient magnetic fiel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L27/22G11C11/15G11C11/16H01F10/32
CPCG11C11/16B82Y25/00H01F10/3236H01L43/08H01F10/3254H01F10/123Y10S977/935H01F10/3286H01F10/329H10N50/10G11C11/15
Inventor 北川英二永濑俊彦吉川将寿西山胜哉岸达也与田博明
Owner KIOXIA CORP
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