41 results about "Square Micrometer" patented technology

A non-volatile memory resistor cell with a nanotip electrode, and corresponding fabrication method are provided. The method comprises: forming a first electrode with nanotips; forming a memory resistor material adjacent the nanotips; and, forming a second electrode adjacent the memory resistor material, where the memory resistor material is interposed between the first and second electrodes. Typically, the nanotips are iridium oxide (IrOx) and have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. In one aspect, the substrate material can be silicon, silicon oxide, silicon nitride, or a noble metal. A metalorganic chemical vapor deposition (MOCVD) process is used to deposit Ir. The IrOx nanotips are grown from the deposited Ir.

Provided are a CCP (current confined path)-CPP (current-perpendicular-to-plane) type giant magneto-resistance (GMR) element having a giant magneto-resistance ratio in a low resistance region (a region of not more than 1 ohm per square micrometer) and a magnetic sensor using this GMR element. The CCP-CPP type GMR element A has a laminated structure of an anti-ferromagnetic layer, a magnetization pinned layer, an intermediate layer and a magnetization free layer, and is formed to have a construction in which a current flows perpendicularly to a film plane. By using an ultrathin magnesium oxide layer having micropores that is preferentially oriented in the (001) direction as the intermediate layer, the magneto-resistance ratio is enhanced, because a current flowing from the magnetization free layer to the magnetization pinned layer (or in the opposite direction) is confined by the metal in the micropores.

A heat-treated high-strength Al—Cu—Mg—Si aluminum alloy product exhibits excellent extrudability and high strength. The high-strength Al—Cu—Mg—Si aluminum alloy product obtained by extrusion is characterized in that the microstructure of the entire surface of the cross section of the aluminum alloy product is formed of recrystallized grains, the grains have an average aspect ratio (L/t) of 5.0 or less (wherein L is the average size of the grains in the extrusion direction, and t is the average thickness of the grains), and the orientation density of the grains in the microstructure, for which the normal direction to the {001} plane is parallel to the extrusion direction in comparison with the grains orientated to random orientations, is 50 or less. The high-strength Al—Cu—Mg—Si aluminum alloy product obtained by extrusion and cold working is characterized in that rod-shaped precipitates are arranged in the grains of the matrix in the <100> direction, the precipitates have an average length of 10 to 70 nm and a maximum length of 120 nm or less, and the number density of the precipitates in the [001] direction measured from the (001) plane is 500 or more per square micrometer.

A chamber includes a substrate, a chamber layer disposed on the substrate that defines the sidewalls of the chamber, and the chamber layer has a chamber surface. The chamber has an area in the plane formed by the chamber surface in the range from about 1 square micrometer to about 10,000 square micrometers. The chamber also includes an orifice layer disposed over the chamber layer. The orifice layer has a first and second orifice surface and a bore wherein the bore has an area in the plane formed by the first orifice surface less than the chamber area. The chamber further includes a protective layer deposited, through the bore, on the sidewalls of the chamber layer and a portion of the first orifice surface.

The invention discloses an electrode for a secondary battery. At least one of an upper surface and a lower surface of the electrode is provided with a plurality of pits, the top projection area of each pit is 25 square nanometers to 250000 square micrometers, a depth of each pit is 10 nanometers to 500 micrometers, and a central distance between two adjacent pits is 10 nanometers to 1000 micrometers. When used as a secondary battery electrode, the electrode can effectively limit an electrochemical active metal such as metal lithium in the pits, so that dendritic crystals (for example, lithium dendritic crystals) of the electrochemical active metal can be prevented from appearing on the surface of the electrode, the huge volume deformation of the electrode in an alloy reaction process can be buffered, and the safety performance and cycle life of the metal secondary battery can be improved and prolonged. The invention also provides a preparation method and application of the electrode.

Disclosed is a reflecting film. The reflecting film contains hollow resin particles incompatible with polyester, the average outer diameter of the hollow resin particles is smaller than 3 micrometers, the average inner diameter of the hollow resin particles is smaller than 2 micrometers, and the distribution density of the hollow resin particles in the reflecting film is higher than 0.07 per square micrometer. The particle consumption of the reflecting film is low, the reflecting film keeps good stiffness and tenancy while the refractivity of the reflecting film is improved, and the reflecting film is excellent in mechanical performance. Besides, the relative reflectivity of the reflecting film is higher than 97%, and the reflecting film is suitable for the field of panel display backlight modules.

The invention relates to a low-attenuation and large-effective-area single-mode optical fiber. The single-mode optical fiber comprises a core layer and wrapping layers and is characterized in that the radius r1 of the core layer is 4.8 micrometers-6.5 micrometers, and the relative refraction index delta1 of the core layer is 0.10%-0.24%; the core layer is wrapped with the inner wrapping layer, the sunk inner wrapping layer, the transitional outer wrapping layer and the outer wrapping layer in sequence from inside to outside; the radius r2 of the inner wrapping layer of the optical fiber is 8.5 micrometers-15 micrometers, the relative refraction index delta2 of the inner wrapping layer of the optical fiber is -0.3%--0.05%, the radius r3 of the sunk inner wrapping layer is 14 micrometers-22 micrometers, the relative refraction index delta3 of the sunk inner wrapping layer is -0.45%--0.2%, the radius r4 of the transitional outer wrapping layer is 35 micrometers-50 micrometers, and the relative refraction index delta4 of the transitional outer wrapping layer is -0.25%--0.05%; the outer wrapping layer is a pure silica glass layer. The attenuation parameter of the optical fiber is decreased; through reasonable design of all fiber core layer sections of the optical fiber, the optical fiber has an effective area larger than or equal to 100 square micrometers. The overall performance parameters of cutoff wavelength, bending loss and chromatic dispersion of the optical fiber are good in an application wave band, and a multilayer stepped sunk wrapping layer structure is adopted for the section of the optical fiber and well reduces the bending loss of the optical fiber.

The invention relates to a complete wave nonzero dispersive flat single mode optical fiber, which comprises a fiber core circular shaped center delamination, a first ring-shaped delamination, a second ring-shaped delamination and a uniform outer cladding. The refractive index of the first ring-shaped delamination is lower than that of the uniform outer cladding. The optimum choose of the refractive index section shape of each delamination, relative refractive index difference and semidiameter or width can guarantee that the chromatic dispersion is between 0.1ps/nm-km and 12.0ps/nm-km in a wavelength range of 1300nm to 1625nm. The valid section Aeff is more than or equel to 50 square micrometers under the condition that the wavelength is 1550nm. The performance of the optical fiber can be changed in different intervals in the range according to the different requirements of communicating systems such as DWDM and CWDM.

It is an object of the present invention to provide a method for manufacturing SIMOX wafer, wherein roughness Rms of a measurement area of 10 square micrometers in a surface of an SOI layer and roughness Rms of a measurement area of 10 square micrometers in an interface between the SOI layer and a BOX layer can be reduced respectively and a SIMOX obtained by the method. The method is to manufacture a SIMOX wafer comprising; a step of forming a first ion-implanted layer 12 containing highly concentrated oxygen within a wafer 11; a step of forming a second ion-implanted amorphous layer 13; and a high temperature heat treatment step of transforming the first and second ion-implanted layers into a BOX layer 15 by holding the wafer at a temperature between 1300° C. or more and a temperature less than a silicon melting point in an atmosphere containing oxygen, wherein when a first dose amount in the step of forming the first ion-implanted layer is set to 2×10¹⁷ to 3×10¹⁷ atoms/cm², the first implantation energy is set to 165 to 240 keV and a second dose amount in the step of forming the second ion-implanted layer is set to 1×10¹⁴ to 1×10¹⁶ atoms/cm².

The invention relates to a method for separating impurities in a solution by chemically modified solid nanopore arrays. The area of the solid nanopore arrays is not less than 250 square micrometers. The diameter of a single nanopore is 1-200nm. Pore density is not less than 1 pore/square micrometer. The inner wall of pores is modified with one component or a mixture of more than two components ata random ratio, wherein the components are selected from the group consisting of 6-28bp nucleic acid molecule, antigen molecule, 60-200kDa antibody molecule, peptide molecule containing 6-50 amino acid and silane molecule. When 1-50 microliters of a solution which contains impurity molecule at the concentration of 1-10 nmol.ml<-1> or impurity particles of less than 1microgram/ml passes through the solid nanopore arrays, the impurity molecule or particles are intercepted by the chemically modified nanopore arrays. The structural formula of the silane molecule is Y(CH2)nSiXmZ3-m, wherein n is 0-3.

The invention relates to optical fiber with a large effective area. The mold field diameter of the optical fiber at the 1550 nm position is 12.0-13.6 micrometers, and the mold field area is larger than or equal to 120 square micrometers; the optical fiber sequentially comprises a core layer, cladding layers and coating layers, the core layer is a silicon dioxide glass layer with the radius of 5-7 micrometers, an inner cladding layer is a fluorine-doped inner cladding layer, the relative refringence difference is -0.4--0.2 %, the radius r3 of the middle cladding layer is 12-25 micrometers, and the outer cladding layer is a quartz glass layer with the radius r4 of 25-45 micrometers; the coating layers include an inner coating layer and an outer coating layer, the diameter of the inner coating layer is 192 micrometers, and the diameter of the outer coating layer is 245 micrometers. The cut-off wavelength, the bending loss, chromatic dispersion and other comprehensive performance parameters in the application wave band are good, the optical fiber can be used as long-distance optical fiber communication under bad conditions such as super crossing gobi and deep sea, the circular degree of all layers of the optical fiber is good, the round formed shape is ensured, and strain of the optical fiber can reach 2% or more.

The invention relates to a hydrorefining catalyst and a preparation method thereof. The method comprises: (1) soaking a gamma-alumina carrier in a mixture containing urea, water-soluble salt of a metal component C and water, and performing heat treatment, filtering, washing and drying to obtain a modified alumina carrier; and (2) introducing a metal component A and a metal component B to the modified alumina carrier obtained from the step (1). The metal component A is selected from at least one of group VIII metal elements, the metal component B is selected from at least one of group VIB metal elements, and the metal component C is at least one of divalent metal elements and is different from the metal component A and the metal component B. The surface of the catalyst has a network structure with the grid density being 0.5-50 grids per square micrometer. The hydrorefining catalyst is obviously improved in activity and prolonged in service life.

A hybrid underlayment, includes a thermoplastic making up between 92.0% by volume to 95.5% by volume of the hybrid underlayment. A plurality of expanded microspheres is dispersed through the thermoplastic. The microspheres are expanded to a volume in a range of between 180 square micrometers and 1450 square micrometers. The microspheres makeup between 1.0% by volume to 7.5% by volume of the hybrid underlayment. The hybrid underlayment is extruded into a flat sheet having a thickness of between 1.0 mm and 2.0 mm and a density from 7 pcf to 25 pcf. A metalized thermoplastic film is laminated to the top surface of the thermoplastic sheet. A pre-stretched laminated oriented mesh fabric is fused to the metalized thermoplastic film.

Systems for displaying images and methods of fabricating are provided. A representative system incorporates a transflective thin film transistor liquid crystal display (TFT-LCD) panel having a plurality of subpixels. The display panel comprises a first substrate with a transparent electrodeformed thereon, a reflective electrode on the transparent electrode, a second substrate opposite the first substrate, a liquid crystal layer between the first substrate and the second substrate. The panel also exhibits at least one of: the reflective electrode and the transparent electrode overlap by substantially between 100 and 1000 square micrometers; the reflective electrode and the transparent electrode overlap such that a ratio of an area of overlap of the reflective electrode and the transparent electrode to an area of a corresponding subpixel is substantially between 0.05 and 0.12; and a ratio of an area of the transparent electrode to an area of a corresponding subpixel is substantially between 0.5 and 0.6.

The invention provides a static random access memory and a fabrication method thereof. A pull-up transistor and a pull-down transistor both employ L-shaped gates, a floating body effect in a partially-depleted (PD) SOI device, leakage power consumption caused by a parasitic triode effect and transistor threshold voltage drift can be effectively prevented under the condition that relatively small unit area can be sacrificed (the final effective unit area can be smaller than 8 square micrometers), and the noise-resistant capability of the unit is improved; and moreover, no extra mask is introduced to the fabrication method of the static random access memory, the fabrication method is completely compatible with a traditional logic process, a central symmetric structure is employed in the unit, the matching of the size and the threshold value of a MOS tube is facilitated, array formation is also facilitated, and a static random access memory (SRAM) chip is convenient to completely customize.

The invention relates to a graphene-containing conductive printing ink and a preparation method thereof and a flexible paper-based conductive circuit. The method comprises the following steps: a graphene microchip preparation step, a silver-ammonia solution preparation step, a glucose solution preparation step, a double-droplet composite preparation step, an impurity cleaning step, and a conductive printing ink preparation step. The28-29 parts by weight of the printing ink contains 10 parts by weight of a graphene/nano-silver particle filler, more than 80% of the nano-silver particles in the filler have a radial size of less than 70-80 nm, and the particle agglomeration number of the nano-silver attached to micro-sheets per square micrometer is higher than 75 to 80. The actual measured resistivity of the conductive ink circuit is between 0.87-0.75 x 10<-7> ohm.meter.