109 results about "Beam plasma" patented technology

A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.

The invention discloses a micro beam plasma 3D (three dimensional) printing device and a micro beam plasma 3D printing method. The micro beam plasma 3D printing device comprises a plasma processing device, a central control system, a shaping chamber, a work platform, a numerical control main shaft, a drive device and a powder feeding device. The plasma processing device comprises a plasma power source, a plasma generator, a plasma arc pressure increasing device, a plasma gun, a work gas circuit and a cooling water circuit. The plasma generator, the plasma arc pressure increasing device, the plasma gun, the work gas circuit and the cooling water circuit form a plasma processing integration unit. When the micro beam plasma 3D printing device is used in processing, the numerical control main shaft clamps the plasma processing integration unit, and is driven by the drive device to move in the XYZ direction, and the work platform moves up and down, and achieves feeding in the X direction. According to the micro beam plasma 3D printing device and the micro beam plasma 3D printing method, micro beam plasma is used as a hot source of melting metal material in metal 3D printing, and the industrial grade metal part 3D printing device high in efficiency and low in cost can be obtained on the premise that shaping accuracy similar to that in a laser 3D printing technology is guaranteed.

In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

The invention discloses a laser three-dimensional fast forming and manufacturing method based on micro arc powder carrying. By means of the method, flow carrying and synchronous powder sending of powder are achieved by means of a micro-beam plasma arc, and main energy needed for forming a metal structure is provided by means of a pulse laser heat source. The powder sending precision of powder materials is improved by means of the good arc stability and stiffness of the micro-beam plasma arc; and by means of the characteristic that the energy function of the micro-beam plasma arc is concentrated is utilized, so that the melting rate and the deposition rate of the powder are increased, and the heat absorbing rate of the powder materials and a forming area on the energy of the laser heat source is increased. The main arc current of the micro-beam plasma arc in the method is 30 A-50 A, the pulse peak power of a pulse laser beam is 4 kW-10 kW, and three-dimensional fast forming and manufacturing of metal materials and the structure are achieved by adjusting the relative position relation between the laser beam and the powder carrying flow of the micro-beam plasma arc, the beam spot coinciding ratio and the output energy of the micro-beam plasma arc and the laser beam. The laser three-dimensional fast forming and manufacturing method has the beneficial effects of being high in forming efficiency, high in precision, little in deformation, high in technical adaptability and the like.

Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

Disclosed is a charge neutralizing device which is capable of being applied to a substrate 13 having a large area and in which electrons having low energy of 5 eV or less, and preferably 2 eV, are supplied so that charge due to ion implantation and damage by the electrons are avoided with respect to a cusp device. The charge neutralizing device includes a microwave generating unit, a plasma generating unit that generates electron plasma using a microwave generated from the microwave generating unit, and a contact unit that brings the electron plasma generated from the plasma generating unit into contact with a beam plasma region including an ion beam.

The invention provides a control system for micro-beam plasma welding formation of a thin-wall slit circular longitudinal seam. The control system comprises a micro-beam plasma welding system, a precision welding workbench, a monocular coaxial telecentric visual sensing system and an MPAW (micro plasma arc welding) formation real-time control unit; the monocular coaxial telecentric visual sensing system is used to acquire a weld pool front transient image for thin-wall slit circular longitudinal seam micro-beam plasma welding, the MPAW formation real-time control unit is used to perform multi-electricity parameter synchronous acquisition of a welding process and online real-time prediction of seam formation feature parameters, and the micro-beam plasma welding system and the precision welding workbench perform real-time adjustment of welding process parameters according to a control command transmitted by the MPAW formation real-time control unit. The system enables an improvement in the quality reliability of welded products and success rate of single welding, is applicable to the micro-beam plasma welding process of thin-wall metal precision members in the fields such as aerospace manufacturing and is particularly applicable to precision welding of elastic elements such as ultrathin-wall membrane boxes and bellows.

The invention belongs to the field of material surface modification and in particular relates to an auxiliary electric arc ion plating device for coupling a rotary transverse magnetic field with an axial magnetic field, wherein a work table and a target are arranged in a vacuum chamber of the device; the front side of the target is opposite to the work table; an axial magnetic field generation device which is arranged behind the target is sleeved on a flange or a support cylinder and insulating protection is arranged between the axial magnetic field generation device and the flange or the support cylinder; a rotary transverse magnetic field generation device which is arranged outside the vacuum chamber is sleeved on a flange or a support cylinder at the outer side of the target and insulation protection is arranged between the rotary transverse magnetic field generation device and the flange or the support cylinder; an axial magnetic field generation device which is arranged in a plasma transmission channel is sleeved on a flange or a support cylinder on the outer side of the vacuum chamber and insulation protection is arranged between the axial magnetic field generation device and the flange or the support cylinder. The movement of an arc spot is controlled by the rotary transverse magnetic field, so that the discharging manner of the arc spot is improved; the movement speed of the arc spot and the emission of large particles on the surface of the target are improved; meanwhile, the plasma transmission is restrained by the axial magnetic field; and the density and the utilization rate of the plasma are improved.

Disclosed herein is a wafer processing method including a processed position measuring step of imaging an area including a beam plasma generated by applying a pulsed laser beam to a wafer, by using an imaging unit during the formation of a laser processed groove on the wafer, and next measuring the positional relation between the position of the beam plasma and a preset processing position. Accordingly, it is possible to check whether or not the laser processed groove is formed at a desired position, in real time during laser processing. If the position of the laser processed groove is deviated, the processed position can be immediately corrected.