110 results about "Beam plasma" patented technology

The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber. All or a portion of the inner wall may be grounded to provide a well defined anode for bias power that is applied to the workpiece pedestal, and may be heated so that deposits do not cause its impedance to drift.

Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.

The invention discloses a micro beam plasma 3D (three dimensional) printing device and a micro beam plasma 3D printing method. The micro beam plasma 3D printing device comprises a plasma processing device, a central control system, a shaping chamber, a work platform, a numerical control main shaft, a drive device and a powder feeding device. The plasma processing device comprises a plasma power source, a plasma generator, a plasma arc pressure increasing device, a plasma gun, a work gas circuit and a cooling water circuit. The plasma generator, the plasma arc pressure increasing device, the plasma gun, the work gas circuit and the cooling water circuit form a plasma processing integration unit. When the micro beam plasma 3D printing device is used in processing, the numerical control main shaft clamps the plasma processing integration unit, and is driven by the drive device to move in the XYZ direction, and the work platform moves up and down, and achieves feeding in the X direction. According to the micro beam plasma 3D printing device and the micro beam plasma 3D printing method, micro beam plasma is used as a hot source of melting metal material in metal 3D printing, and the industrial grade metal part 3D printing device high in efficiency and low in cost can be obtained on the premise that shaping accuracy similar to that in a laser 3D printing technology is guaranteed.

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

The invention discloses a high-temperature superconductive magnet system for a magnetically confined plasma propeller, which comprises two magnetic mirror units in the same structure, wherein each magnetic mirror unit comprises a Dewar barrel and two high-temperature superconductive magnets; and a refrigerator is used for cooling the two high-temperature superconductive magnets in each magnetic mirror unit. mode by a conductive cooling mode and uses the refrigerator to cool the two superconductive magnets in a conductive manner, so that the high-temperature superconductive magnet system for the magnetically confined plasma propeller greatly simplifies the structure, realizes high vacuum, reduces dependence on liquid nitrogen and high-cost operations, avoids a large-size low-temperature system and equipment used in the low-temperature liquid cooling mode, eliminates risks caused by the evaporation of a low-temperature liquid, cools the magnet to a temperature below 77 K and realizes a high field by increasing the critical current of the magnets, thus a superconductive low-temperature system is compact, efficient, safe and convenient, and is beneficial for integrating a superconductive apparatus with a low-temperature device.

The invention relates to a micro-beam plasma arc / laser hybrid welding method, which comprises the following steps: fixing a micro-beam plasma arc transmitter and a laser beam transmitter, providing a workpiece which moves at a constant speed, and forming a mode of micro-beam plasma arc preposition; carrying out initial fusion on the surface of a welded part of the workpiece by micro-beam plasma arcs, then irradiating laser beams to the welded part, thereby deepening the depth of fusion of micro-beam plasma arc welding, and then completing the welding. The welding method of the invention can reduce the reflectance of aluminium alloys to lasers, and improve the absorption rate of aluminium alloys to laser energies, thereby improving the effective heating depth of laser, increasing the depths of fusion of weld joints and effectively reducing the widths of weld joints and heat affected zones; and finally, obtaining weldments which have the advantages of large depth of fusion, extremely small heat affected zone and beautiful appearance.

In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

The inventive method for carrying out chemical reactions consists in supplying reaction gas from the source (2) thereof to a vacuum reaction chamber (4), forming a supersonic reaction gas stream (1) in said reaction chamber and in activating said reaction gas stream by exposing it to the action of an electron beam (6) in such a way that an electron-beam plasma (8) is produced. The supersonic reaction gas stream is formed in such a way that a decompression zone (5) is produced in the center thereof at entry into the vacuum reaction chamber. Said decompression zone has a density which is lower with respect to the density of the zones adjacent thereto. The action of the electron beam on the reaction gas stream is carried out by introducing said electron beam into said decompression zone.

The invention discloses a system for detecting a micro-beam plasma arc three-dimensional dynamic spectrum and relates to the technical field of spectrum detection. The system comprises a three-dimensional precision inching platform (11), a light path system, a light path system fixing device (10), a spectrum collecting control system and a data line (9). The three-dimensional precision inching platform (11) comprises a stepping motor which can realize the stepping motion on X,Y and Z three-dimensional directions, a screw rod mechanism and a base. The light path system comprises a detecting lens (7), an optical fiber (1) and a spectrometer (8), wherein two ends of the optical fiber (1) are respectively connected with the detecting lens (7) and the spectrometer (8). The spectrum collecting control system comprises a spectrum collecting software (12), a stepping motor controller (14) and a computer (13). The stepping motor controller (14) and the spectrometer (8) are connected with the computer (13) by the data line (9). The system of the invention can identify and collect the spectrum information on the periphery and the interior point of the arc and the precision is 10 microns.

A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.

A voltage tracking system for an ion thruster includes a discharge chamber, a screen grid, an accelerator grid, and an accelerator grid voltage controller. The discharge chamber contains plasma at a given potential. The screen grid is adjacent to the discharge chamber and is voltage biased relative to the plasma to form a plasma sheath that repels electrons and attracts ions from the discharge chamber plasma. The accelerator grid is adjacent to the screen grid and has a voltage for accelerating the ions to create thrust and prevent any electrons from backstreaming into the ion thruster from the beam plasma. The accelerator grid voltage controller supplies voltage to the accelerator grid. The accelerator grid voltage controller adjusts the magnitude of the accelerator grid voltage to minimize the amount of voltage required to prevent electron backstreaming into the ion thruster.

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

The invention discloses a laser three-dimensional fast forming and manufacturing method based on micro arc powder carrying. By means of the method, flow carrying and synchronous powder sending of powder are achieved by means of a micro-beam plasma arc, and main energy needed for forming a metal structure is provided by means of a pulse laser heat source. The powder sending precision of powder materials is improved by means of the good arc stability and stiffness of the micro-beam plasma arc; and by means of the characteristic that the energy function of the micro-beam plasma arc is concentrated is utilized, so that the melting rate and the deposition rate of the powder are increased, and the heat absorbing rate of the powder materials and a forming area on the energy of the laser heat source is increased. The main arc current of the micro-beam plasma arc in the method is 30 A-50 A, the pulse peak power of a pulse laser beam is 4 kW-10 kW, and three-dimensional fast forming and manufacturing of metal materials and the structure are achieved by adjusting the relative position relation between the laser beam and the powder carrying flow of the micro-beam plasma arc, the beam spot coinciding ratio and the output energy of the micro-beam plasma arc and the laser beam. The laser three-dimensional fast forming and manufacturing method has the beneficial effects of being high in forming efficiency, high in precision, little in deformation, high in technical adaptability and the like.

The invention relates to a cathode device for carrying out linear reactive sputtering film coating by utilizing electric-field confinded plasmas, comprising a target stand, a working gas source, a reaction gas source and a first target material and a second target material which are oppositely arranged on the target stand and respectively extend along the longitudinal direction, wherein the two opposite side wall surfaces of the first target material and the second target material respectively concave inwards to form sputtering surfaces, and a target cavity is formed between the two sputtering surfaces; the working gas source and the reaction gas source are respectively arranged at the inlet side and the outlet side of the target cavity; and on the cross section of the cathode device, the minimum distance between the two sputtering surfaces is at the outlet position of the target cavity. In the invention, the distribution of electric fields is changed by changing the shape of the target material, and the direction of the strength of the electric field in the target cavity is along the direction being vertical to the sputtering surfaces, and therefore, the plasmas are intensively confined in the central areas of the pair of target materials, which increases the density of the target materials and further improves the sputtering rate. Meanwhile, the invention also can effectively prevent reaction gas from entering the target cavity, and thereby, target poisoning is avoided.

A digitalized man-machine interactive system of micro-beam plasma welding is prepared for applying DSP digital signal processor and using and DSP chip TMS 320 F 240 to receive command issued by operator through keyboard, using monolithic computer to control output of display and utilizing character liquid crystal display module as display for displaying both parameter values and welding process information of micro-beam plasma.

An apparatus is provided which is capable of measuring an angle between a holder and an ion beam without generating particles, with a simple structure, in a short time and at high accuracy even during an implantation state. An angle measurement apparatus is configured to: measure an angle of the ion beam by measuring beam plasma produced and emitting light when the ion beam collides with residual gas, with two cameras at two positions in a beam traveling direction; measure an angle of the holder by measuring light from a linear light source provided on the holder; and thereby measure the angle between the ion beam and the holder.

Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

Disclosed is a charge neutralizing device which is capable of being applied to a substrate 13 having a large area and in which electrons having low energy of 5 eV or less, and preferably 2 eV, are supplied so that charge due to ion implantation and damage by the electrons are avoided with respect to a cusp device. The charge neutralizing device includes a microwave generating unit, a plasma generating unit that generates electron plasma using a microwave generated from the microwave generating unit, and a contact unit that brings the electron plasma generated from the plasma generating unit into contact with a beam plasma region including an ion beam.

The invention discloses a magnetic control powder combustion-type plasma flow calculation method, which belongs to the field of magnetic confinement plasma, and comprises step S1 of establishing a magnetohydrodynamic model, solving a fluid mechanics equation and an electromagnetic confinement system equation that control plasma motion through coupling, and researching an interaction law of a flowfield and an electromagnetic field in the plasma; step S2 of performing numerical calculation; and step S3 of verifying a calculation program, and analyzing and verifying the calculation program fromdifferent angles respectively. The calculation method of the invention is more scientific and reasonable. An adaptive magnetohydrodynamic model is established regarding the flow problem of the magnetic confinement powder combustion-type plasma. An induction magnetic field equation method is adopted to couple and solve an N-S equation group containing an electromagnetic source item and the electromagnetic confinement system equation. Meanwhile, a k-epsilon turbulence equation is modified electromagnetically. Further, on the basis of determining a boundary condition, the interaction law betweenthe flow field and the electromagnetic field and a turbulence structure in the plasma are predicted.

The invention provides a control system for micro-beam plasma welding formation of a thin-wall slit circular longitudinal seam. The control system comprises a micro-beam plasma welding system, a precision welding workbench, a monocular coaxial telecentric visual sensing system and an MPAW (micro plasma arc welding) formation real-time control unit; the monocular coaxial telecentric visual sensing system is used to acquire a weld pool front transient image for thin-wall slit circular longitudinal seam micro-beam plasma welding, the MPAW formation real-time control unit is used to perform multi-electricity parameter synchronous acquisition of a welding process and online real-time prediction of seam formation feature parameters, and the micro-beam plasma welding system and the precision welding workbench perform real-time adjustment of welding process parameters according to a control command transmitted by the MPAW formation real-time control unit. The system enables an improvement in the quality reliability of welded products and success rate of single welding, is applicable to the micro-beam plasma welding process of thin-wall metal precision members in the fields such as aerospace manufacturing and is particularly applicable to precision welding of elastic elements such as ultrathin-wall membrane boxes and bellows.

The invention relates to flexible connection methods of multilayer aluminum foil, in particular to a connection method of diffusion welding multilayer aluminum foil. The connection method aims to solve the problems that in an existing multilayer aluminum foil welding method, cost is high, and strength is not high. The method comprises the steps of firstly, pretreatment, secondly, photochemical treatment and thirdly, diffusion welding connection. According to the connection method of the diffusion welding multilayer aluminum foil, the principle of low-cost and high-strength connection is achieved, aluminum foil connection can be achieved conveniently through diffusion welding, and micro-beam plasma and micro-arc welding precise control is not needed; by means of diffusion welding, a connector high in strength can be obtained, the shearing strength reaches up to 28.2 Mpa, and the strength at room temperature and the strength at high temperature are both larger than brazing strength by 2-3 times; by means of diffusion welding, a surface oxidation film is damaged through grinding, and a welding area can be effectively controlled without brazing filler metal; and due to the fact that heat uniformity of the whole area is achieved and intervention of outside materials is avoided, multilayer welding of the aluminum foil can be achieved more easily.

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

Ion optical methods and apparatus are provided for producing low energy ion beams. The apparatus includes an acceleration electrode for accelerating the ion beam, a deceleration electrode downstream of the acceleration electrode for decelerating the ion beam, and an ion optical element downstream of the deceleration electrode for inhibiting electrons in the beam plasma from reaching the deceleration electrode. The deceleration electrode is biased at a voltage that is selected to provide a potential barrier to thermal ions in the beam plasma to inhibit the thermal ions from reaching the acceleration electrode. The ion optical element maybe implemented as an electron repulsing electrode or as a magnetic element. The acceleration electrode, the deceleration electrode, or both, may be segmented in a direction lateral to the ion beam to define individually controllable electrode segments. The ion optical apparatus may be implemented as an ion source extraction system or as a deceleration lens system.

The invention belongs to the field of related technologies of fine machining of surfaces of metal materials and discloses a micro-beam plasma polishing device of curved-surface metal parts and a method thereof. The device comprises a control assembly, a surface profile detection instrument, a linkage mechanism, a plasma machining gun and part clamps, wherein the surface profile detection instrument and the linkage mechanism are respectively connected with the control assembly; the part clamps are arranged on the linkage mechanism; the plasma machining gun is connected with the control assembly; the control assembly is capable of calculating optimum polishing parameters of strip-shaped raised stripes generated by covering scanning the overlapped parts during polishing for a last time according to the shape of the surfaces of polished areas of the curved-surface metal parts after the positioning of the last time is completed; then the control assembly is capable of controlling the linkage mechanism to move so as to polish the curved-surface metal parts to be polished for a next time according to the optimum polishing parameters, so that the strip-shaped raised stripes are covered. Through the micro-beam plasma polishing device of the curved-surface metal parts, the curved-surface polishing quality and the polishing efficiency are improved; meanwhile, the micro-beam plasma polishing device is convenient to use.

The invention belongs to the field of material surface modification and in particular relates to an auxiliary electric arc ion plating device for coupling a rotary transverse magnetic field with an axial magnetic field, wherein a work table and a target are arranged in a vacuum chamber of the device; the front side of the target is opposite to the work table; an axial magnetic field generation device which is arranged behind the target is sleeved on a flange or a support cylinder and insulating protection is arranged between the axial magnetic field generation device and the flange or the support cylinder; a rotary transverse magnetic field generation device which is arranged outside the vacuum chamber is sleeved on a flange or a support cylinder at the outer side of the target and insulation protection is arranged between the rotary transverse magnetic field generation device and the flange or the support cylinder; an axial magnetic field generation device which is arranged in a plasma transmission channel is sleeved on a flange or a support cylinder on the outer side of the vacuum chamber and insulation protection is arranged between the axial magnetic field generation device and the flange or the support cylinder. The movement of an arc spot is controlled by the rotary transverse magnetic field, so that the discharging manner of the arc spot is improved; the movement speed of the arc spot and the emission of large particles on the surface of the target are improved; meanwhile, the plasma transmission is restrained by the axial magnetic field; and the density and the utilization rate of the plasma are improved.

The invention discloses a neutron beam injector ion source field reverse configuration plasma radio frequency driver, which comprises a vacuum cavity. Outside the vacuum cavity, two coils arranged in parallel are used as a radio frequency power supply antenna. Each coil consists of windings with 1.5 turns or more. The distance between the two coils is larger than the maximum gap between any windings. The two coils are connected with the same phase RF current and the magnetic fields generated by the coils share the same direction, and a metal Faraday cup is arranged at the inner side of the vacuum cavity. The present invention overcomes the shortcomings of the conventional plasma radio frequency driver of neutron beam injector ion source, which uses a uniform magnetic field confinement plasma mode. The driver of the invention utilizes an alternating non-uniform magnetic field and the driven self-magnetic field of the annular plasma current and establishes a field reversal configuration plasma confinement mode, therefore, preventing the Faraday cup from being in direct contact with the high temperature plasma and benefiting the temperature rise and the constraint of the plasma.

In the Faraday device of the prior art, part of the plasma can still reach the Faraday cup, thus affecting the measurement accuracy of the ion beam current. The invention provides a Faraday device, in which a pair of magnets are provided for generating a magnetic field with a direction across the baffle aperture near the aperture, so that the beam plasma and the baffle surface are generated near The plasma cannot reach the positive bias electrode. This reduces the chance that ions contained in the plasma will be attracted by the negative voltage of the suppressor electrode and incident on the Faraday cup, thus reducing errors in the beam current measurement.