Diamond like carbon layer formed by an electron beam plasma process

Abstract

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a divisional application of and claims benefit of U.S. Utility patent application Ser. No. 15 / 195,640, filed Jun. 28, 2016, which application is hereby incorporated by reference herein.BACKGROUNDField of the Disclosure[0002]The present disclosure relates to the fabrication of integrated circuits and to a process for forming a diamond like carbon layer with high etching selectivity, high film density and good mechanical strength on a substrate. More specifically, the disclosure relates to a process for manufacturing a diamond like carbon layer using electron beam plasma process to form the diamond like carbon layer with high etching selectivity, good mechanical strength, low stress and desired film transparency on a substrate for semiconductor applications.Description of the Background Art[0003]Integrated circuits have evolved into complex devices that can include millions of transistors, capacitors and resistors on a s...

AI Technical Summary

Benefits of technology

The diamond-like carbon layer ensures accurate pattern transfer and maintains desired film properties such as density, hardness, and transparency, enhancing the reliability and precision of subsequent lithography and etching processes.

Problems solved by technology

Integrated circuits have evolved into complex devices that can include millions of transistors, capacitors and resistors on a single chip.

As the geometry limits of the structures used to form semiconductor devices are pushed against technology limits, the need for accurate pattern transfer for the manufacture of structures having small critical dimensions and high aspect ratios has become increasingly difficult.

Such thin resist layers (e.g., less than about 2000 Å) can be insufficient to mask underlying material layers during the pattern transfer step due to attack by the chemical etchant.

After a long period of exposure to the aggressive etchants, the hardmask layer without sufficient etching resistance may be changed in film properties, resulting in inaccurate pattern transfer and loss of dimensional control.

Furthermore, the similarity of the materials selected for the hardmask layer and the adjacent layers disposed in the film stack may also result in similar etch properties therebetween, thereby resulting in poor selectivity during etching.

Poor selectivity between the hardmask layer and adjacent layers may result in non-uniform, tapered and deformed profile of the hardmask layer, thereby leading to poor pattern transfer and failure of accurate structure dimension control.

Additionally, relatively loose film structures (e.g., amorphous film structures) in the deposited film and / or hardmask layer may also result in low film mechanical strength and low hardness that result in the hardmask layer being unable to survive an entire etching process due to the attack of the aggressive etchants during the etching process.

Insufficient film hardmask or film mechanical strength may adversely affect pattern transfer accuracy in the subsequent processes.

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