104results about How to "Improve photoelectricity" patented technology

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

An organic light emitting diode is provided. The organic light emitting diode includes a substrate, an electrode structure formed on said substrate, an organic layer formed on said electrode structure and a transparent electrode structure having at least one transparent dielectric layer with a relatively higher refraction index and deposited on said organic layer by thermal evaporation.

The invention relates to the technical field of organic materials and provides a thienothiophene quinoid organic photoelectric material. The material is a compound which is shown as a structural formula (I); in the formula, R1, R2, R3, R4, R5 and R6 are selected from H, C1-C20 alkyl group or C1-C20 alkoxyl group; and m and n are integers of 0-10. The invention also provides a preparation method and application of the thienothiophene quinoid organic photoelectric material. Since the thienothiophene quinoid organic photoelectric material has a quinoid thiophene ring and a cyano group, wider spectral response is guaranteed, the photoelectric conversion efficiency of the material is increased, and better thermal stability and environmental stability are shown.

The present invention provides a optoelectronic device having a surface periodic grating structure and a manufacturing method thereof, which includes: a substrate; a multi-layer semiconductor structure layer formed on the substrate; and a periodic grating structure layer embedded in the multi-layer semiconductor structure layer by etching based on optimized parameters. A direction of an incident light to the optoelectronic device is changed to be resonant to the multi-layer semiconductor structure layer to enhance optoelectricity of the optoelectronic device. The method includes: (1) providing a substrate; (2) forming a multi-layer semiconductor structure layer on the substrate; (3) selecting parameters to perform a design for a periodic grating structure layer on a surface of the multi-layer semiconductor structure layer; and (4) forming the periodic grating structure layer embedded in the multi-layer semiconductor structure layer by etching.

The invention discloses a preparation method of a chlorine-doped multilayer graphene film, relates to a preparation method of a semiconductor type chlorine-doped graphene film, and especially relates to a preparation method of a chlorine-doped multilayer graphene film with good photoelectric performance, obtained by preparing a solution by use of a simple-process liquid-phase chemical reaction, then performing spin coating and then performing high-temperature annealing processing by use of cheap glycol and sulfuric acid as raw materials. The preparation method of the chlorine-doped multilayer graphene film is characterized in that the chlorine-doped graphene film is generated at a time by performing spin coating and annealing on a solution generated through a reaction by use of glycol and hydrochloric acid according to a certain mol ratio and the method comprises three steps, i.e., the liquid-phase chemical reaction, the spin coating and the annealing. According to the preparation method of the semiconductor type chlorine-doped graphene film, through a chlorine doping mode, the energy grade of the graphene film is modulated, the performance of the graphene film is effectively changed, the chlorine-doped graphene film prepared by use of the method is enabled to have better photoelectric and luminescence modulation performance, and the method can be applied to the field of a photoelectric detector.

The invention relates to the technical field of organic materials, and provides a copolymer comprising silafluorene and thiophene pyrroledione units. The copolymer is polymer which is expressed by a structural formula (I), wherein R1, R2 and R3 are selected from C1-C20 alkyl groups; and n is an integer of 1-100. The invention also provides a preparation method and application of the copolymer comprising the silafluorene and thiophene pyrroledione units. In the copolymer, the silafluorene and thiophene pyrroledione units are organically combined together to form an extremely strong donor-receptor structure, so that the stability of a copolymer material is favorably improved, energy band gap of the material is favorably reduced, the sunlight absorption range is expanded, and the photoelectric conversion efficiency is increased.

Belonging to the field of photoelectric and photoelectrochemical films and application, the invention provides a graphite-phase carbon nitride film and a preparation method thereof. The preparation method includes the steps of: taking a nitrogen-rich organic matter as the precursor, subjecting the precursor to heat preservation at 350-400DEG C for 1-6h for primary pyrolysis polymerization, and grinding the obtained product into a powdery sample; spreading the powdery sample in a heat-resistant carrier, placing a substrate material at an opening of the heat-resistant carrier, then placing the heat-resistant carrier at 500-600DEG C, carrying out heat preservation for 2-8h, and conducting evaporation deposition polymerization, and performing cooling to obtain a graphite-phase carbon nitride film on the surface of the substrate material. The graphite-phase carbon nitride film prepared by the method is more uniform, and has lower surface roughness and better light transmittance. The methodprovided by the invention is simple and easy to operate, and has wide application prospects.

A preparing method of an aqueous stable graphene dispersion liquid is provided. The method includes (1) a step of adding a dispersing agent into water, and performing magnetic stirring for 2-3 min until dispersion is uniform with the mass volume ratio of the dispersing agent to the water being 0.5-5:10-100 g/mL, and (2) a step of adding graphene into the prepared dispersing solution with the mass volume ratio of the graphene to the water in the step (1) being 0.1:10-100 g/mL, performing magnetic stirring for 2-3 min and performing ultrasonic dispersion for 1-10 h to obtain the aqueous stable graphene dispersion liquid high in dispersity. Concentrated acids and other strong oxidants are not adopted for oxidation of the graphene in a preparing process of the method. The method brings no loss to physical and chemical properties of the graphene and does not produce waste polluting the environment.

The invention relates to a thermoelectric lighting device using a double parabolic cylindrical surface to reflect parallel light and focus solar energy. Due to the reflecting and focusing action of a parabolic cylindrical surface, uniform parallel light of which the intensity is several times higher than that of sunlight is formed and irradiated on solar energy receiving equipment so as to greatly improve the solar energy receiving efficiency. The thermoelectric lighting device can be used for collecting and receiving the solar energy in an environment with strong light and weak light.

The invention discloses a method for preparing a tungsten oxide filled phthalic acid nano tube. The method comprises the following processes of: 1, performing dipping and filling by using capillarity: selecting a purchased or self-made phthalic acid nano tube, adding 10 to 50 milliliters of deionized water and 0.5 to 10 grams of sodium tungstate (NaWO4.2H2O) into the phthalic acid nano tube, performing full stirring and dissolution, performing ultrasonic treatment for 0.5 to 5 hours, and stirring the solution for 1 to 40 hours; 2, sealing the tube: adding 5 to 20 milliliters of 0.1 to 2mol/L HCl into the solution, and quickly stirring the solution for 3 to 10 minutes at the revolution speed of 700 to 1,000rpm; and 3, performing reaction in the tube: transferring the suspension to a centrifugal tube, centrifuging the suspension for 5 to 20 minutes at the centrifuging speed of 4,000 to 8,000rpm, pouring the centrifuged solution, adding the sediment into 5 to 20 milliliters of 1 to 2mol/L HCl, continuously performing reaction for 1 to 5 hours with stirring to react the un-reacted sodium tungstate in the tube into tungstic acid, washing the product for 1 to 5 times by using deionized water and 1 to 3 times by using alcohol to remove the sodium tungstate outside the nano tube after the reaction is completed, and finally drying the product at the temperature of between 60 and 80 DEG C to obtain a one-dimensional composite nano material, namely the tungsten oxide filled phthalic acid nano tube product.

The invention relates to a condenser lens, in particular to a solar photovoltaic L type condenser. By intercepting from a single parabola in the condenser lens, a ray vertical to a central line over a focus F is crossed with the parabola at a point C, a ray over the focus F is crossed with the parabola at a point A, the angle AFC is 0 to 90 degrees, a ray over the focus F is crossed with the parabola at a point B, the angle BFC is 0 to 90 degrees, and the arc line AB forms a reflector surface so as to form the L type condenser. The opening of the L type condenser is FA, and the ratio of the opening to a silicon surface is the condensing ratio of the L type condenser. The solar photovoltaic L type condenser can obtain high focusing ratio without tracking the solar energy, is always focused in a set focal plane in a set accepted angle range, improves the photoelectric and photo-thermal utilization rate, coessentially and synchronously integrates photo-electricity and photo-heat, and can be integrated with a building.

The invention relates to the field of photoelectricity, in particular to bromine-doped grapehene oxide prepared through a hydrothermal reaction. The invention aims to solve the problems that the existing doped graphene oxide synthesis technology consumes more materials, comprises tedious steps and is not suitable for mass production and provides a semiconductor type bromine-doped graphene oxide preparation technology to effectively modulate energy level of graphene oxide through doping of heterogeneous bromine atoms to optimize photoelectric properties of the graphene oxide. The preparation method of the bromine-doped grapehene oxide is characterized in that the graphene oxide is adopted, analytically pure hydrobromic acid is added in a certain carbon-bromine atomic ratio, and the bromine-doped grapehene oxide is produced once through a hydrothermal reaction, including three steps of preparing graphene oxide, obtaining a graphene oxide and hydrobromic acid solution and conducting the hydrothermal reaction.

The invention relates to a method for preparation of a semiconductor type sulfur-doped graphene film, especially to a method for preparing the semiconductor type sulfur-doped graphene film with good photoelectric properties by using cheap ethylene glycol and sulfuric acid as raw materials through using a liquid-phase chemical reaction process with a simple technology to prepare a solution, and then performing spin coating and performing high-temperature annealing. The method for preparation of the semiconductor type sulfur-doped graphene film is characterized by comprising the steps of using ethylene glycol and sulfuric acid according to a certain molar ratio to perform a reaction to prepare a solution, and performing spin coating and annealing, so as to prepare the sulfur-doped graphene film at a time, and the process comprises three steps of a liquid phase chemical reaction, spin coating and annealing. By doping sulfur, the energy level of the graphene film is modulated, and the properties of the graphene film are effectively changed. So the prepared sulfur-doped graphene film by the invention has excellent photoelectric and luminescence modulated properties and can be used in the field of photoelectric detectors.

The invention relates to the technical field of organic materials and provides a copolymer containing a fluorine and thiophene pyrroledione unit. The copolymer is shown as the structural formula (1); in the formula, R1, R2 and R3 are selected from alkyls of C1 to C20; R4, R5, R6 and R7 are selected from H or alkyls of C1 to C20; x plus y is equal to 1, x is not equal to 0, and y is not equal to 0; and n is an integer of 1 to 100. The invention also provides a preparation method and application of the copolymer containing the fluorine and thiophene pyrroledione unit. The copolymer organically combines a fluorine unit, a 3,4-ethylenedioxythiophene unit, a thiophene unit and a thiophene pyrroledione unit together to form a strong donor-acceptor structure, is beneficial to improving the stability of a copolymer material, reducing the band gap of the material, expanding the sunlight absorbing range and improving the photoelectric conversion efficiency.

The invention discloses a silver nanowire ReS2 functional composite material. The surface of a silver nanowire is coated with a layer of ReS2 nanosheet. The invention also discloses a preparation method of the silver nanowire ReS2 functional composite material. The preparation method comprises the following steps: 1), synthesizing silver nanowires by adopting a polyol method; 2), purifying the silver nanowire to obtain a washed and purified silver nanowire; dispersing the washed and purified silver nanowires in a solvent; centrifuging the dispersed silver nanowire solution in a centrifugal machine, and ultrasonically dispersing the centrifuged precipitate to obtain silver nanowire dispersion liquid; 3), preparing a uniformly dispersed ReS2 nanosheet; and 4), performing hydrothermal compounding on the silver nanowire dispersion liquid and the ReS2 nanosheet to obtain the silver nanowire-ReS2 functional composite material. According to the preparation method, Raman scattering with higherstrength can be provided, and the SERS activity is greatly improved.

The invention relates to a sensor integrated with an oxygen concentration and ultraviolet intensity detection function and a detection method thereof, and belongs to the technical field of sensors. According to the sensor, two same sensitive members are placed in a sealing cavity to serve as an ultraviolet intensity detection unit and another cavity communicated with the outer world to serve an oxygen concentration detection unit respectively, the ultraviolet intensity unit is taken as the reference end of the oxygen concentration detection unit, and the ultraviolet intensity and oxygen concentration of outer environment can be synchronously, rapidly monitored in real time by the sensor by controlling the detection unit to be connected with an external circuit; thermal excitation is replaced with ultraviolet excitation, and therefore the preventing of harmful factors brought by the thermal excitation under the condition of room temperature while the sensor is operated is avoided. Compared with a traditional oxygen sensor, the effective utilization of solar energy by the sensor is facilitated, the sensitive material adopted by the sensor has excellent photoelectric and air-sensitiveperformance, the preparation method of the sensor is simple and low-cost, the sensor can be massively used and is environment-friendly, and the industrial production of sensors is facilitated.