Preparation method of bromine-doped graphene oxide

A graphene and fossil technology, applied in chemical instruments and methods, inorganic chemistry, carbon compounds, etc., can solve the problems of cumbersome steps, many consumables, unsuitable for mass production, etc., and achieve simple equipment and process, simple energy, high-quality Effects of optoelectronic and luminescence modulation properties

Inactive Publication Date: 2019-08-30
KUNMING INST OF PHYSICS
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Problems solved by technology

[0006] Aiming at the problem that the existing doped graphene oxide synthesis technology not only has many consumables but also has cumbersome steps, and is not suitable for mass production, the present invention provides a method to effectively modulate the energy level of graphene oxide by doping heterogeneous bromine atoms , a semiconductor-type bromine-doped graphene oxide preparation technology that optimizes the photoelectric properties of graphene oxide

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  • Preparation method of bromine-doped graphene oxide
  • Preparation method of bromine-doped graphene oxide
  • Preparation method of bromine-doped graphene oxide

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Embodiment 1

[0020] Embodiment 1: A preparation technology of bromine-doped graphene oxide, adding analytically pure hydrobromic acid according to a certain carbon-bromine atomic ratio, and generating bromine-doped graphene oxide at one time through hydrothermal reaction, including preparing graphene oxide, obtaining oxidized Graphene and hydrobromic acid solution, hydrothermal reaction three steps, specifically as follows:

[0021] 1) Preparation of graphene oxide: Take 23ml of concentrated sulfuric acid and place it in an ice-bathed beaker, weigh 0.5g of graphite powder and 0.25g of sodium nitrate, mix them and pour them into concentrated sulfuric acid, stir with a mechanical stirrer for half an hour, then weigh 3g Potassium permanganate was slowly added to the mixed solution of concentrated sulfuric acid, and the solution was kept ice-bathed for one hour, then transferred to a water bath at 35°C, and reacted for one hour, then transferred to a water bath at 98°C, and added After 60ml of...

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Abstract

The invention relates to the field of photoelectricity, in particular to bromine-doped grapehene oxide prepared through a hydrothermal reaction. The invention aims to solve the problems that the existing doped graphene oxide synthesis technology consumes more materials, comprises tedious steps and is not suitable for mass production and provides a semiconductor type bromine-doped graphene oxide preparation technology to effectively modulate energy level of graphene oxide through doping of heterogeneous bromine atoms to optimize photoelectric properties of the graphene oxide. The preparation method of the bromine-doped grapehene oxide is characterized in that the graphene oxide is adopted, analytically pure hydrobromic acid is added in a certain carbon-bromine atomic ratio, and the bromine-doped grapehene oxide is produced once through a hydrothermal reaction, including three steps of preparing graphene oxide, obtaining a graphene oxide and hydrobromic acid solution and conducting the hydrothermal reaction.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to preparing bromine-doped graphene oxide through hydrothermal reaction. Background technique [0002] Doped graphene oxide, in addition to inheriting many excellent properties of graphene oxide such as hydrophilicity, large surface area, high carrier mobility, good mechanical flexibility and stable optical properties, also has significant quantum confinement Effect and edge effect, with special optical properties, electronic properties, etc., have received extensive attention and research in recent years. There are various preparation techniques for graphene oxide, including Hummers method and many modified Hummers methods, electrochemical oxidation method, bottom-up growth method, etc. [0003] At present, doped graphene oxide has not been widely used in the field of optoelectronics because the technology for stable mass production of graphene oxide is not mature enough. The main r...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/198
CPCC01B32/198
Inventor 唐利斌项金钟
Owner KUNMING INST OF PHYSICS
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