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Preparation method of bromine-doped graphene oxide

A graphene and fossil technology, applied in chemical instruments and methods, inorganic chemistry, carbon compounds, etc., can solve the problems of many consumables, not suitable for mass production, and cumbersome steps, and achieve simple energy, excellent photoelectricity and luminescence modulation performance, The effect of simple equipment and process

Inactive Publication Date: 2019-12-13
KUNMING INST OF PHYSICS
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Problems solved by technology

[0006] Aiming at the problem that the existing doped graphene oxide synthesis technology not only has many consumables but also has cumbersome steps, and is not suitable for mass production, the present invention provides a method to effectively modulate the energy level of graphene oxide by doping heterogeneous bromine atoms , a semiconductor-type bromine-doped graphene oxide preparation technology that optimizes the photoelectric properties of graphene oxide

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  • Preparation method of bromine-doped graphene oxide
  • Preparation method of bromine-doped graphene oxide
  • Preparation method of bromine-doped graphene oxide

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Embodiment 1

[0020] Embodiment 1: A preparation technology of bromine-doped graphene oxide, adding analytically pure hydrobromic acid according to a certain carbon-bromine atomic ratio, and generating bromine-doped graphene oxide at one time through hydrothermal reaction, including preparing graphene oxide, obtaining oxidized Graphene and hydrobromic acid solution, hydrothermal reaction three steps, specifically as follows:

[0021] 1) Preparation of graphene oxide: Take 23ml of concentrated sulfuric acid and place it in an ice-bathed beaker, weigh 0.5g of graphite powder and 0.25g of sodium nitrate, mix them and pour them into concentrated sulfuric acid, stir with a mechanical stirrer for half an hour, then weigh 3g Potassium permanganate was slowly added to the mixed solution of concentrated sulfuric acid, and the solution was kept ice-bathed for one hour, then transferred to a water bath at 35°C, and reacted for one hour, then transferred to a water bath at 98°C, and added After 60ml of...

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Abstract

The invention relates to the field of photoelectricity, in particular to bromine-doped graphene oxide prepared through hydrothermal reaction. Directed at the problems of high material consumption, complicated steps and unsuitability for batch production in existing doped graphene oxide synthesis technology, the invention provides a preparation technology of semiconductor-type bromine-doped graphene oxide, and the technology utilizes doping of heterogeneous bromine atoms to effectively modulate the energy level of graphene oxide and optimize the photoelectric properties of graphene oxide. The preparation method of bromine-doped graphene oxide is characterized by adopting graphene oxide, adding analytically pure hydrobromic acid according to a certain carbon-bromine atom ratio, and carryingout hydrothermal reaction to generate bromine-doped graphene oxide at a time, and the method includes the three steps of: preparation of graphene oxide, acquisition of graphene oxide and a hydrobromicacid solution, and hydrothermal reaction.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to preparing bromine-doped graphene oxide through hydrothermal reaction. Background technique [0002] Doped graphene oxide, in addition to inheriting many excellent properties of graphene oxide such as hydrophilicity, large surface area, high carrier mobility, good mechanical flexibility and stable optical properties, also has significant quantum confinement Effect and edge effect, with special optical properties, electronic properties, etc., have received extensive attention and research in recent years. There are various preparation techniques for graphene oxide, including Hummers method and many modified Hummers methods, electrochemical oxidation method, bottom-up growth method, etc. [0003] At present, doped graphene oxide has not been widely used in the field of optoelectronics because the technology for stable mass production of graphene oxide is not mature enough. The main r...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/198
CPCC01B32/198
Inventor 唐利斌项金钟张倩田品
Owner KUNMING INST OF PHYSICS
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