8results about How to "Broad spectral response" patented technology

This invention discloses a geological disaster monitoring system based on a three-dimensional structured quantum dot imaging device, comprising a MEMS structured light projection module, a short-wave infrared quantum dot imaging module, a synchronization control and signal processing module, and a data processing and disaster early warning module. The MEMS structured light projection module uses a dual-axis MEMS micromirror to perform two-dimensional scanning of short-wave infrared laser light to form a structured light pattern. The short-wave infrared quantum dot imaging module employs a heterogeneous structure with a three-dimensional structured electron transport layer conformally coated with a lead sulfide quantum dot photosensitive layer to enhance short-wave infrared light absorption efficiency and carrier separation efficiency. The synchronization control and signal processing module achieves nanosecond-level time synchronization. The data processing and disaster early warning module monitors surface cracks, landslides, and subsidence areas through three-dimensional point cloud reconstruction and multi-temporal deformation inversion. This invention has the advantages of wide spectral response, high sensitivity, strong low-light imaging capability, and high three-dimensional reconstruction accuracy.

The invention provides a method for preparing high-crystallinity modified carbon nitride at low temperature, and belongs to the technical field of photocatalytic materials.The method comprises the steps that urea, solar salt and phosphonyl chloride tripolymer are mixed and then ground, and a mixture is obtained; calcining the mixture at the temperature of 300 to 400 DEG C to obtain a calcined product; performing washing and vacuum drying on the calcined product to obtain high-crystallinity modified carbon nitride; wherein in the mixture, the mass ratio of the urea to the solar salt to the phosphonyl chloride tripolymer is 20: 4: 1. The modified carbon nitride prepared by the method has the advantages of wide spectral response and high carrier separation efficiency, so that the modified carbon nitride has excellent photocatalytic performance, the synthesis temperature of the modified carbon nitride in the method is relatively low, and the modified carbon nitride has the advantages of low energy consumption and low cost. The invention also provides high-crystallinity modified carbon nitride and application thereof.

The present invention discloses a phototransistor based on platinum diselenide and SOI, a preparation method and its application. The vertical heterostructure and type II energy band arrangement of the PtSe2 / SOI phototransistor enable it to exhibit excellent photodetection performance in a wide spectral range from ultraviolet to near infrared, and the design of the back-gate structure effectively promotes the separation and transmission of photogenerated carriers, thereby improving the light response performance of the photodetector. The preparation method of the phototransistor is simple, low-cost and compatible with silicon processes. The photodetector composed of the phototransistor has excellent characteristics such as zero-bias drive, high response rate, high detection rate, high stability, and wide spectral response, paving the way for a new generation of silicon-based photodetectors.

The invention belongs to the technical field of photocatalysis, and particularly relates to a graphite-phase carbon nitride photocatalyst based on a nitrogen-defect sulfur-doped coupled S-type homojunction as well as a preparation method and application of the graphite-phase carbon nitride photocatalyst. N-defect g-C3N4 (NA-DCN) and S-doped g-C3N4 (NA-SCN) are respectively constructed through nitric acid assisted treatment, and directed migration of photon-generated carriers is realized by using an S-type homojunction interface so as to inhibit recombination; stable interface bonding is formed through component proportion optimization, and the specific surface area and the number of active sites of the material are synchronously increased. Finally, through multi-dimensional structure regulation and control, the problems that the g-C3N4 is limited in photoresponse range, fast in carrier recombination and difficult in consideration of catalytic activity and stability are synchronously solved, the photocatalytic hydrogen production performance of the g-C3N4 is remarkably enhanced, and a reliable technical scheme is provided for large-scale application of an efficient carbon nitride-based photocatalytic material.

The invention discloses preparation and uranium separation application of a magnetic element doped cerium dioxide photocatalyst with a spin polarization effect, and belongs to the technical field of rare earth oxides, and the preparation method comprises the following steps: stirring metal nitrate or metal chlorine salt, cerium salt and a mineralizing agent in an aqueous solution until the materials are uniformly mixed, transferring the mixture into a reaction kettle for a hydrothermal reaction, and drying to obtain the magnetic element doped cerium dioxide photocatalyst with the spin polarization effect. Centrifuging, washing and drying, and collecting precursor solid powder; uniformly grinding the precursor solid powder, calcining in an atmosphere furnace, and cooling to room temperature to obtain the magnetic element doped cerium dioxide photocatalyst with the spin polarization effect. The magnetic element doped cerium dioxide photocatalyst with the spin polarization effect prepared by the invention has relatively high uranium separation and removal efficiency and relatively good catalytic stability for separating and removing uranyl ions in complex uranium mine wastewater.

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.

The present invention provides a silicon-based room temperature infrared photodetector and a method for making the same, and belongs to the field of semiconductor and photoelectric detection technology. The manufacturing method comprises: completing ion implantation of the substrate by injecting chalcogen ions; annealing the injected sample by pulsed laser melting to achieve recrystallization of the injected layer; making interdigitated gold electrodes on the injected layer by photolithography, electron beam evaporation and stripping processes; using indium / gallium alloy to form an ohmic contact on the back of the substrate as the back electrode of the photodetector, and finally obtaining the photodetector. Since the super-doped silicon layer prepared by super-doping of chalcogen elements has ultra-high carrier density and thermal stability, and does not show lattice mismatch; and the prepared photodetector shows strong performance indicators, such as responsivity, specific detection rate, bandwidth and response speed, it provides a feasible method for realizing a new generation of silicon-based room temperature infrared photodetectors with wide spectral response and high detection rate in the future.

The invention discloses a self-powered ultraviolet photoelectric detector based on a GaN / CuI heterojunction, a preparation method thereof and a low-power-consumption ultraviolet communication system, the self-powered ultraviolet photoelectric detector is based on a heterojunction structure formed by an n-type GaN thin film layer and a CuI thin film layer, the response speed of the heterojunction is high, the stability is high, and a self-powered light detection mode can be realized. The system comprises an ultraviolet light source, an optical signal receiver, a data acquisition module and a decoding module, wherein the data acquisition module consists of a power supply module, an amplifying circuit and a high-precision ampere meter. The decoding module is composed of an analog-to-digital converter and a single-chip microcomputer development board, a GaN / CuI heterojunction photoelectric detector is used as an optical signal receiver, and the characteristics of low power consumption, high confidentiality and high flexibility are achieved.