4results about How to "Broad spectral response" patented technology

This invention discloses a geological disaster monitoring system based on a three-dimensional structured quantum dot imaging device, comprising a MEMS structured light projection module, a short-wave infrared quantum dot imaging module, a synchronization control and signal processing module, and a data processing and disaster early warning module. The MEMS structured light projection module uses a dual-axis MEMS micromirror to perform two-dimensional scanning of short-wave infrared laser light to form a structured light pattern. The short-wave infrared quantum dot imaging module employs a heterogeneous structure with a three-dimensional structured electron transport layer conformally coated with a lead sulfide quantum dot photosensitive layer to enhance short-wave infrared light absorption efficiency and carrier separation efficiency. The synchronization control and signal processing module achieves nanosecond-level time synchronization. The data processing and disaster early warning module monitors surface cracks, landslides, and subsidence areas through three-dimensional point cloud reconstruction and multi-temporal deformation inversion. This invention has the advantages of wide spectral response, high sensitivity, strong low-light imaging capability, and high three-dimensional reconstruction accuracy.

The invention belongs to the technical field of photocatalysis, and particularly relates to a graphite-phase carbon nitride photocatalyst based on a nitrogen-defect sulfur-doped coupled S-type homojunction as well as a preparation method and application of the graphite-phase carbon nitride photocatalyst. N-defect g-C3N4 (NA-DCN) and S-doped g-C3N4 (NA-SCN) are respectively constructed through nitric acid assisted treatment, and directed migration of photon-generated carriers is realized by using an S-type homojunction interface so as to inhibit recombination; stable interface bonding is formed through component proportion optimization, and the specific surface area and the number of active sites of the material are synchronously increased. Finally, through multi-dimensional structure regulation and control, the problems that the g-C3N4 is limited in photoresponse range, fast in carrier recombination and difficult in consideration of catalytic activity and stability are synchronously solved, the photocatalytic hydrogen production performance of the g-C3N4 is remarkably enhanced, and a reliable technical scheme is provided for large-scale application of an efficient carbon nitride-based photocatalytic material.

The invention discloses preparation and uranium separation application of a magnetic element doped cerium dioxide photocatalyst with a spin polarization effect, and belongs to the technical field of rare earth oxides, and the preparation method comprises the following steps: stirring metal nitrate or metal chlorine salt, cerium salt and a mineralizing agent in an aqueous solution until the materials are uniformly mixed, transferring the mixture into a reaction kettle for a hydrothermal reaction, and drying to obtain the magnetic element doped cerium dioxide photocatalyst with the spin polarization effect. Centrifuging, washing and drying, and collecting precursor solid powder; uniformly grinding the precursor solid powder, calcining in an atmosphere furnace, and cooling to room temperature to obtain the magnetic element doped cerium dioxide photocatalyst with the spin polarization effect. The magnetic element doped cerium dioxide photocatalyst with the spin polarization effect prepared by the invention has relatively high uranium separation and removal efficiency and relatively good catalytic stability for separating and removing uranyl ions in complex uranium mine wastewater.

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.