75results about How to "Broad spectral response" patented technology

A process of forming a thin film photoactive layer of a perovskite photoactive device comprising: applying at least one coating of a perovskite precursor solution and a polymer additive to a substrate, wherein the at least one perovskite precursor solution comprises at least one reaction constituent for forming at least one perovskite compound having the formula AMX₃ dissolved in a coating solvent selected from at least one polar aprotic solvent, the polymer additive being soluble in said coating solvent, and in which A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, and X is selected from at least one of F, Cl, Br or I.

The invention relates to the technical field of organic materials and provides a thienothiophene quinoid organic photoelectric material. The material is a compound which is shown as a structural formula (I); in the formula, R1, R2, R3, R4, R5 and R6 are selected from H, C1-C20 alkyl group or C1-C20 alkoxyl group; and m and n are integers of 0-10. The invention also provides a preparation method and application of the thienothiophene quinoid organic photoelectric material. Since the thienothiophene quinoid organic photoelectric material has a quinoid thiophene ring and a cyano group, wider spectral response is guaranteed, the photoelectric conversion efficiency of the material is increased, and better thermal stability and environmental stability are shown.

A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

The invention relates to a double-junction depth PN junction photodiode based on standard CMOS (Complementary Metal Oxide Semiconductor) technology. The double-junction depth PN junction photodiode comprises a deep junction PN junction photodiode and a shallow junction PN junction photodiode, wherein the deep junction PN junction photodiode is composed of a semiconductor silicon P type substrate and an N type well, and the shallow junction PN junction photodiode is composed of a P type source-drain injection region and the N type well; the semiconductor silicon P type substrate is an anode of the deep junction PN junction photodiode, and the N type well is a cathode of the deep junction PN junction photodiode; the P type source-drain injection region is an anode of the shallow junction PN junction photodiode, and the N type well is a cathode of the shallow junction PN junction photodiode; the semiconductor silicon P type substrate form heavily doped ohmic contact through the P type source-drain injection region, and is leaded out through a metallic contact hole; and the N type well forms heavily doped ohmic contact through an N type source-drain injection region, and is leaded out through a metallic contact hole.

The invention relates to a perovskite/crystalline silicon laminated solar cell. The perovskite/crystalline silicon laminated solar cell comprises a crystalline silicon cell, a composite junction and aperovskite cell, the composite junction is arranged between the crystalline silicon cell and the perovskite cell, the crystalline silicon cell comprises a crystalline silicon substrate, the surface,close to the composite junction, of the crystalline silicon substrate is a textured surface, and the composite junction is made of nc-Si:H(p+)/nc-Si:H (n+). The laminated solar cell is of a suede structure, light reflection can be effectively reduced, the spectral absorption efficiency and the current density are increased, and therefore the photoelectric conversion efficiency is improved. The adopted material is an nc-Si:H (p+)/nc-Si:H (n+) composite junction, deposition of the perovskite cell in a textured structure can be avoided, a uniform thin layer is prepared, and the spectral absorption efficiency and the current density are increased, so that the photoelectric conversion efficiency is improved.

The invention belongs to the field of photoelectronic materials, and discloses a thiophene organic semiconductor material and a preparation method and application thereof. The copolymer has a general formula (P), wherein in the formula, x+y is equal to 2; x is more than or equal to 1, and y is more than 0 and is less than 1; n is more than 1 and is less than or equal to 100; R1 and R4 are alkyl having 1 to 20 carbon atoms; and R2 and R3 are hydrogen and alkyl having 1 to 20 carbon atoms or phenyl substituted by alkyl having 1 to 20 carbon atoms or alkoxy having 1 to 20 carbon atoms or are thephenyl. Compared with the prior art, the invention has the advantages that: the organic semiconductor material is prepared by polymerizing a cyclopentadiene [2,1-b:3,4-b'] bithiophene unit, a thiophene unit and a quinoxaline unit, so the carrier mobility of the organic semiconductor material is increased, spectral response is broadened, and the organic semiconductor material has high carrier transmission property and electrochemical property; and the alkyl and the like can be introduced by a simple and convenient method to improve solubility. The preparation process of the semiconductor material is simple and easy to operate and control, and is suitable for industrial production.

The invention provides a benzodithiophene-benzodi(benzothiadiazole) containing copolymer, preparation and application thereof. The benzodithiophene-benzodi(benzothiadiazole) containing copolymer is a compound P with a general formula shown as the specification, wherein R1 and R2 are alkyl of C1-C20, R3 and R4 are alkyl of C1-C20, alkoxy of C6-C16 or a thiophene derivative group, which has an alkyl side chain of C16, and n is an integer ranging from 1 to 100. The benzodithiophene-benzodi(benzothiadiazole) containing copolymer contains a new benzodi(benzothiadiazole) conjugated unit, the absorption spectrum of the copolymer undergoes red shift and has a high matching degree with a solar spectrum. Meanwhile, with a planar conjugated structure, the copolymer provided by the invention has the advantages of high charge carrier migration rate and high energy conversion efficiency, simple and controllable preparation method, and has good application prospects in polymer solar cells, organic light-emitting devices and other photoelectric material fields.

The invention relates to the technical field of organic materials and provides a copolymer containing a benzotriazol group. The copolymer has a structural formula (I) shown as the specification, wherein R is an alkyl group from C1 to C32 or alkoxy-monosubstituted phenyl group from C1 to C38, R' is an alkyl group from C1 to C32, and n is an integer of 10-50. The invention also provides a preparation method and application of the copolymer containing the benzotriazol group. The copolymer containing the benzotriazol group contains benzotriazol and carbazole groups and has favorable photoelectric properties, thermal stability and film forming capability, thereby being a novel red-light-emitting copolymer.

A conjugated fluorene polymer is provided, which is defined by structure formula (1), wherein: R₁, R₂, R₃, R₄ represent H or C₁-C₂₀ alkyl, x+y=1, x≠0, y≠0, n is a natural number between 1-1000, Ar₁ is a group containing thiophene. A preparation method for the conjugated fluorene polymer and a solar cell device containing the conjugated fluorene polymer are also provided. Due to fluorene or its derivatives and conjugated structure, the conjugated fluorene polymer exhibits an excellent light stability and thermal stability. In addition, since thiophene and benzothiadiazole groups are introduced into the main chain of the polymer, the spectral response range of the polymer is broadened.

The invention discloses a Z-type catalyst with a photothermal synergistic function and application thereof. The Z-type catalyst AgBr/Ag/SrTiO3-TiNT consists of SrTiO3 (strontium titanat), TiO2 (titanium dioxide) nanotube array, AgBr (silver bromide) and Ag (silver). The Z-type catalyst can be applied to the photothermal synergistic catalyzing, higher catalyzing activity is obtained at lower reaction temperature, the good thermal stability is realized, and the repeated utilization is conveniently realized; the noble metal (Ag) is used as an electron transmitter to form the Z-type catalyst, so as to effectively accelerate the separating of photoelectron cavity pairs and transfer of electrons in the catalyst, showing the broader spectrum response and higher separating efficiency of photon-generated carriers, and improve the stability and oxidation-reduction ability of the catalyst. The Z-type catalyst has the advantages that the preparation conditions are simple, the cost is lower, and the Z-type catalyst is suitable for industrialized production.

The invention relates to a low-oxygen dependent X-photodynamic nano photosensitizer as well as a preparation method and an application thereof. The low-oxygen dependent X-photodynamic nano photosensitizer comprises nano scintillation crystal particles capable of converting a high-energy radiation ray into an ultraviolet light, a silicon dioxide layer cladded on the surface of the nano scintillation crystal, zinc oxide nanoparticles loaded on the outer surface of the silicon dioxide layer, and polyethylene glycol grafted on the surfaces of the zinc oxide nanoparticles. The nano scintillation crystal capable of converting the high-energy radiation ray into the ultraviolet light is taken as a functional kernel; the nano scintillation crystal can emit a characteristic ultraviolet ray when being irradiated by an X ray; and the characteristic ultraviolet ray can be efficiently absorbed by shell ZnO semiconductor quantum dots, so as to generate electron hole pairs. A lot of high-activity hydroxyl radicals (.OH) and superoxide anions (.O2<->) are generated by complicated physical and chemical reaction, so as to damage cancer cells.

The invention provides a two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and a preparation method thereof. The two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector comprises a flexible substrate, a transparent electrode and two-dimensional Te nanosheets; the transparent electrode is located on the flexible substrate, and the material of the transparent electrode is MXene-Ti3C2Tx; the two-dimensional Te nanosheets are erected on the positive electrode and the negative electrode of the transparent electrode and are communicated with the positive electrode and the negative electrode of the transparent electrode. The electrode is made of the two-dimensional material and can be in better contact with the two-dimensional active material, so that the device has lower dark current, and the current is more stable along with time change in the whole test process.

The invention relates to a saturable absorber of a laser, which aims at the problems of poor thermal conductivity, low stability, narrow spectral response, complex preparation process, short working life and high production cost of the existing saturable absorber, and provides a preparation method of the saturable absorber and a reflective and transmissive saturable absorber. A method for preparea saturable absorbent comprises that follow steps: 1) dispersing a two-dimensional nanomaterial in a dispersion liquid and performing ultrasonic treatment to obtain a two-dimensional nanomaterial dispersion liquid; 2) place that porous glass in a two-dimensional nano-material dispersion liquid, screen and adsorbing under the ultrasonic condition to form a composite body of the porous glass and thetwo-dimensional nano-material; 3) take out that composite body of the porous glass and the two-dimensional nanometer material and drying; 4) annealing the composite body of the porous glass and the two-dimensional nanometer material after the drying treatment; and 5) cutting and polishing the composite body of the annealed porous glass and the two-dimensional nanometer material to obtain a saturable absorber.

The invention provides an indium tin oxide/vertical graphene photoelectric detector composite structure and a preparation method thereof and belongs to the technical field of a photoelectric detector.The photoelectric detector comprises the following components from the bottom up in sequence: glass serving as a substrate of the device, vertical graphene serving as an optical absorption layer andan electron transport layer of the device, an ITO (indium tin oxide) thin film serving as a transparent current assisted diffusion layer, and titanium/gold electrodes arranged at the two sides of thevertical graphene and connected to an external power source. Since the vertical graphene has a broadband spectrum response characteristic, the detector operates in bands from the visible light band tothe infrared band; the designed ITO thin film can effectively transfer photo-induced carriers, thereby suppressing defect influence and improving output photocurrent of the device; besides, the detector has high light absorption rate and light response, and can work under a low bias voltage; the process is simple and repeatable; and detection efficiency and rate of finished product of the detector are improved effectively.

The invention relates to the technical field of preparation of photoelectric materials, specifically to a sulfur-containing photoelectric material and a preparation method thereof. The organic photoelectric material prepared by using the preparation method provided by the invention has a structure containing a thiophene ring with a five-membered ring structure which conforms to a Huckel's rule andhas moderate energy band gap, wide spectral response and good heat stability and environmental stability; thus, the organic photoelectric material provided by the invention has excellent photoelectric properties, high conversion efficiency and low production cost, and is superior to conventional common OLED devices. The invention also provides a preparation method for the organic photoelectric material. The preparation method provided by the invention is simple, has easily-available raw materials, and can meet the needs of industrial development; and the organic optoelectronic material provided by the invention has good application effect in OLED light-emitting devices, and has good industrial prospects.

A copolymer containing fluorenylporphyrin-anthracene is disclosed, which comprises a polymer represented by formula (1), in which R₁, R₂, R₃ and R₄, which may be identical or different, are C₁-C₁₆ alkyl, and n is an integer of 1 to 100. A preparation method of the copolymer containing fluorenylporphyrin-anthracene and the application thereof in manufacture of solar cell devices, organic field-effect transistors, organic electroluminescent devices, organic optical storage device, organic nonlinear materials or organic laser devices are also disclosed.

The invention discloses a sulfonic acid tetraphenyl porphyrin nano-fluorescent material and a preparation method thereof, which relate to a fluorescent porphyrin material and a preparation method thereof. The sectional shape of the material is of a rectangular sheet or strip or sheet and strip. The method comprises the following steps: preparing a TPRS alcohol solution first, preparing a TPPS nano-fluorescent material dispersion system, and obtaining a product through separation and drying. The material has smaller size and better photosensitivity, has good characteristics of a porphyrin monomer such as rigidity and flexibility, electronic buffer capacity, photosensitivity, high chemical stability, wide spectral response, and also has special properties after the nanometer treatment such as small-size effect, surface effect, quantum effect, interfacial effect. The method is simple, has low production cost, and is convenient for promotion and application. The material prepared by adopting the method can be widely used as markers, photosensitive materials as well as sensitive recognition elements and materials for constructing photoelectric devices, molecular devices and sensors.