Aluminum gallium nitrogen -lead zirconat-titanate focal plane detector

A technology of focal plane detectors and detectors, which is applied in the direction of instruments, thermoelectric devices, measuring devices, etc., can solve the problems that large-scale focal plane detectors cannot be used, and achieve the effects of feasible manufacturing process, wide application prospects, and convenient use

Inactive Publication Date: 2008-07-02
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

The patent realizes the detection of ultraviolet and infrared bands on both sides of the gemstone substrate. The disadvantage of this structure is that it cannot be used for large-scale focal plane detectors.

Method used

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  • Aluminum gallium nitrogen -lead zirconat-titanate focal plane detector
  • Aluminum gallium nitrogen -lead zirconat-titanate focal plane detector

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Embodiment Construction

[0017] Taking the ultraviolet detection wavelength as 250-280nm as an example below, the specific embodiment of the present invention will be further described in detail in conjunction with the accompanying drawings:

[0018] The present invention adopts the conventional material growth and device preparation process, and realizes the device structure forming through the material layer-by-layer growth and device etching process, and the process steps are as follows:

[0019] (1) On the double-sided polished sapphire substrate 1, the MOCVD method is used to arrange and grow sequentially (see Figure 3(a)):

[0020] 0.1-1.5 micron thick AlN buffer layer 2;

[0021] 0.5-2 micron thick Si doping concentration is 10 18 cm -3 N-type Al x Ga 1-x N layer 3, component x=0.65;

[0022] 0.1-0.4 micron thick i-type Al y Ga 1-y N layer 4, composition y=0.45;

[0023] 0.05-0.4 micron thick Mg doping concentration is 10 17 cm -3 P-type Al y Ga 1-y N layer 5, composition y=0.45;

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Abstract

The invention discloses an AlGaN-PZT focal plane detector, which adopts a structure in which two material with different response wave bands are stacked and integrated in the same direction. By using that layers in a multi-layer film structure for optical absorption of different photon energies are different, the organic combination of the absorption of wide wave band from infrared light to ultraviolet light with high resolution is realized. As an ultraviolet absorption layer, an epitaxial layer absorbs the incident photon of which the energy is more than a band gap width, and the incident photon is transformed to photocurrent; at the same time, as a window layer, the epitaxial layer allows the incident photons of which the energy is less than the band gap width to transmit. The transmitted photons are absorbed and transformed into heat by LaNiO3 and the heat is transmitted to PZT material to obtain optical signals by utilizing pyroelectric property. The invention has the advantages that the invention is applicable to the application of the focal plane in large scale and is able to be operated under room temperature.

Description

technical field [0001] The invention relates to an ultraviolet-infrared band focal plane detector, in particular to an aluminum gallium nitrogen-lead zirconate titanate (AlGaN / PZT) focal plane detector which is stacked and integrated by multilayer thin films. Background technique [0002] At present, two or more narrow-band integrated focal plane detectors are mainly concentrated in the infrared and visible bands. There are few reports on ultraviolet-infrared integrated detectors, and there are only two Chinese patents. An article titled "GaN-based UV-IR dual-color integrated detector", patent number: 200510026720.6. This patent consists of sequentially arranged and grown N on a sapphire substrate + -GaN electrode layer, GaN-based multiple quantum wells, Al x Ga 1-x N ultraviolet absorbing layer and interdigitated electrodes; the ultraviolet and infrared wavelengths to be detected are respectively composed of Al x Ga 1-x Al in N UV-absorbing layer and GaN-based multiple...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/16H01L27/144H01L31/09H01L37/00G01J1/00G01J5/00
Inventor 张燕孙璟兰王妮丽李向阳陈杰刘向阳韩莉孟祥建
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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